Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structure characteristics of $SiO_2$ thin film of the FBAR Bragg reflector

FBAR 소자의 Bragg 반사층의 $SiO_2$ 박막 특성에 관한 연구

  • Lee, Soon-Bum (Department of Electric and Electronics Engineering in Kyungwon University) ;
  • Park, Sung-Hyun (Department of Electric and Electronics Engineering in Kyungwon University) ;
  • Lee, Neung-Heon (Department of Electric and Electronics Engineering in Kyungwon University) ;
  • Shin, Young-Hwa (Department of Electric and Electronics Engineering in Kyungwon University)
  • 이순범 (경원대학교 전기전자공학과) ;
  • 박성현 (경원대학교 전기전자공학과) ;
  • 이능헌 (경원대학교 전기전자공학과) ;
  • 신영화 (경원대학교 전기전자공학과)
  • Published : 2005.07.07
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Abstract

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

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