• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.113-113
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on $AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 $ppm/^{\circ}C$ within a temperature range from $25^{\circ}C$ to $50^{\circ}C$ and -1040 $ppm/^{\circ}C$ at $500^{\circ}C$. The micro heater generates the heat about $500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• 센서학회지
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• 제18권4호
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• pp.311-315
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on AlN(0.1 $\mu$m)/3C-SiC(1.0 $\mu$m) suspended membranes by surface micro-machining technology. The 3C-SiC and AlN thin films which have wide energy band gap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3CSiC RTD(resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR(thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 ppm/$^{\circ}C$ within a temperature range from 25 $^{\circ}C$ to 50 $^{\circ}C$ and -1040 ppm/$^{\circ}C$ at 500 $^{\circ}C$. The micro heater generates the heat about 500 $^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than Pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• 센서학회지
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• 제13권1호
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• pp.35-40
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• 2004

A thin-film multijunction thermal converter was fabricated through the process using 6 inch silicon wafer semiconductor process and bulk micromachining. Evanohm R alloy and chromel-constantan were used as a heater and thermocouple materials, respectively. The temperature coefficient of resistance of Evanohm R heater was about 75.12 ppm/$^{\circ}C$ and the voltage sensitivity of the thermal converter indicated about 5.75 mV/mW in air. The transfer differences, measured by FRDC-DC method in the frequency range from 20 Hz to 10 kHz, showed the value under about 1.36 ppm, 0.83 ppm for the film thickness of 500, 200 nm, respectively. And in case of a 200 nm-thick thermal converter, the AC-DC transfer differences seems to be stabilized below the value of 1 ppm in the frequency range from 1 kHz to 500 kHz.

• 대한기계학회논문집A
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• 제29권4호
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• pp.526-533
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• 2005

Reliability problem in inkjet printhead, one of MEMS devices, is also very important. To eject an ink drop, the temperature of heater must be high so that ink contacting with surface reaches above $280^{o}C$ on the instant. Its heater is embedded in the thin multi-layer in which several materials are deposited. MEMS processes are the main sources of residual stresses development. Residual stress is one of the factors reducing the reliability of MEMS devices. We measured residual stresses of single layers that consist of multilayer. FE analysis is performed using design of experiment(DOE). Transient analysis for heat transfer is performed to get a temperature distribution. And then static analysis is performed with the temperature distribution obtained by heat transfer analysis and the measured residual stresses to get a stress distribution in the structure. Although the residual stress is bigger than thermal stress, thermal stress is more influential on fatigue life.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.857-860
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• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Journal of Korean Society for Atmospheric Environment
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• 제20권E2호
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• pp.69-75
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• 2004

In this study, thin film gas sensor based on tin oxide was fabricated to examine its characteristics. Target gas is acetonitrile ($CH_3$CN) which is a blood simulant for the chemical warfare agent. Sensing materials are SnO$_2$ SnO$_2$/Pt, and Sn/Pt with thickness from 1000 to 3000 $\AA$. The sensor consists of a sensing electrode with inter-digit (IDT) type in front side and a heater in rear side. Resistance changes of sensing materials are monitored on real time basis using a data acquisition board with a 12-bit analog to digital converter. Sensitivities are measured at different operating temperatures also with different gas concentrations and film thickness. The high sensitivity is obtained for Sn (3000 $\AA$)/Pt (30 $\AA$) at 30$0^{\circ}C$ for 3 ppm. Response and recovery times were about 40 and 160 s, respectively. Repetition measurements showed very good results with $\pm$3% in full scale range.

• 전자공학회논문지D
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• 제36D권9호
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• pp.37-45
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• 1999

박막형 다중접합 열전변환기의 시간에 따른 출력 전압 변화를 감소시키기 위해 벌크의 저항온도계수가 매우 적은 EVANOHM-S 합금을 박막 히터재료로 사용하였고, 또한 Seebeck 계수차이가 비교적 작은 크로멜-알루멜 열전쌍을 박막 열전퇴(thermopile)의 열전요소로 하였다. EVANOHM-S 박막 히터의 저항온도계수는 약 $1.4 {\times} 10^4/^{\circ}C$ 였고, 크로멜-알루멜 박막 열전쌍의 Seebeck 계수차이는 약 $38 {\mu}V/K$였다. 열전변환기의 출력 전압 변화는 공기중에서 처음 120초 동안 약 0.06%였고, 약 5분간이상 히터의 예열후 출력전압 변화는 현저히 감소하였다. 10 Hz ~ 10 kHz의 주파수 범위에서 열전변환기의 교류-직류 전압 및 전류 변환 오차범위는 각각 ${\pm}$1.6 ppm 및 ${\pm}$0.7 ppm이었고, 10Hz 이하 또는 10 kHz 이상의 주파수에서는 교류-직류 변환오차가 크게 증가하였다.

• 한국재료학회지
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• 제33권11호
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• pp.497-501
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• 2023

ZnO/Cu/ZnO (ZCZ) thin films were deposited at room temperature on a glass substrate using direct current (DC) and radio frequency (RF, 13.56 MHz) magnetron sputtering and then the effect of post-deposition electron irradiation on the structural, optical, electrical and transparent heater properties of the films were considered. ZCZ films that were electron beam irradiated at 500 eV showed an increase in the grain sizes of their ZnO(102) and (201) planes to 15.17 nm and 11.51 nm, respectively, from grain sizes of 13.50 nm and 10.60 nm observed in the as deposited films. In addition, the film's optical and electrical properties also depended on the electron irradiation energies. The highest opto-electrical performance was observed in films electron irradiated at 500 eV. In a heat radiation test, when a bias voltage of 18 V was applied to the film that had been electron irradiated at 500 eV, its steady state temperature was about 90.5 ℃. In a repetition test, it reached the steady state temperature within 60 s at all bias voltages.

• 센서학회지
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• 제5권6호
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• pp.51-59
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• 1996

실리콘기판과의 스트레스균형이 이루어진 150 nm-$Si_{3}N_{4}$/300 nm-$SiO_{2}$/150 nm-$Si_{3}N_{4}$ 다이아프레임위에 백금 박막히터 및 Bi-Sb 열전대배열을 형성하여 히터에서 실리콘기판으로 전달되는 열량의 차단효과가 현저히 개선된 유체센서를 제작하였다. 백금 박막히터는 유전체 다이아프레임의 열차단 효과때문에 비선형 전류-전압 특성을 나타내었고, 이 히터의 저항온도계수는 약 $0.00378\;/^{\circ}C$였으며, 또한 Bi-Sb 열전대의 Seebeck계수는 약 $97\;{\mu}V/K$였다. 기체의 열전도도가 증가할수록 유체센서가 나타내는 열기전력은 감소하였으며, 히터온도가 증가하거나 히터와 열전대사이의 거리가 감소할수록 센서의 감도는 증가하였다. 히터전압을 약 2.5V로 하였을 때 유체센서의 $N_{2}$유량에 대한 감도는 약 $1.27\;mV{\cdot}(sccm)^{-1/2}$였고, 열응답시간은 약 0.13 초였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1411-1413
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD (Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn wt 10%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature $150^{\circ}C$ and 8% $O_2$ partial pressure showed about $3.6{\Omega}/{\square}$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.