• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.3
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• pp.83-90
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• 2020

The effect of substrate surface roughness and sintering temperature on the adhesion strength of Ag-based thick film conductors formed on AlN substrates with excellent thermal conductivity was studied. The adhesion strength of the thick-film conductor manufactured using an AlN substrate having a surface roughness (R_a) of 0.5 was higher than that of a thick-film conductor manufactured using a substrate having a surface roughness greater or smaller than this. In the case of a substrate with a surface roughness of less than 0.5, the contact area between the Ag thick film conductor and the substrate was relatively smaller than that of a substrate with a surface roughness of 0.5, resulting in a lower adhesive strength. On the other hand, when a substrate having a surface roughness of more than 0.5 was used, it was found that the conductor film was not completely adhered to the substrate, and as a result, it was found that the adhesive strength was small. In addition, it was found that the surface smoothness of the Ag-based thick film conductor film obtained by sintering at 850℃ was the best compared to the smoothness of the conductor film obtained by sintering at different sintering temperatures, and as a result, it was found that the adhesive strength of the conductor film was the highest.

• Proceedings of the Korean Ceranic Society Conference
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• 1986.12a
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• pp.237-255
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• 1986

The thick and thin film hybrid microcircuit technologies are reviewed. The materials, te processing conditions and the final properties of thick and thin film conductors, resistors dielectrics are discussed.

• The Magazine of the IEIE
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• v.17 no.6
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• pp.53-60
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• 1990

본 글은 완성된 circuit를 thick-film hybrid IC화 하기 위하여 고려하여야 할 사항인 설계의 기본개념, 기판 재질의 소개 및 특성, 도체, 저항, 유전체 paste를 소개하고 제조 기술 분야에서는 기본공정인 인쇄, 소성, 트리밍, packaging에 대하여 기술하였다.

• Journal of Ocean Engineering and Technology
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• v.29 no.1
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• pp.94-99
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• 2015

Lead zirconate titanate (PZT) thick films with thicknesses of ㎛ were fabricated on silicon substrates using an aerosol deposition method. A PZT powder solution was prepared using a sol-gel process. The average diameters (d50) obtained were 1.67, 1.98, and 2.40μm when the pyrolysis temperatures were 300℃, 350℃, and 450℃ respectively. The as-deposited film had a uniform microstructure without any cracks or pores. The as-deposited films on silicon were annealed at a temperature of 700℃. The 20-㎛-thick PZT film showed good adherence between the PZT film and substrate, with no tearing observed in the conventional solid phase process. This was probably because the presence of pores produced from organic residue during annealing relieved the residual stresses in the deposited film.

• Journal of Ocean Engineering and Technology
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• v.27 no.6
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• pp.95-99
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• 2013

Lead zirconate titanate (PZT) thick films with a thickness of $10-20{\mu}m$ were fabricated on silicone substrates using an aerosol deposition method. The starting powder, which had diameters of $1-2{\mu}m$, was observed using SEM. The average diameter ($d_{50}$) was $1.1{\mu}m$. An XRD analysis showed a typical perovskite structure, a mixture of the tetragonal phase and rhombohedral phase. The as-deposited film with nano-sized grains had a fairly dense microstructure without any cracks. The deposited film showed a mixture of an amorphous phase and a very fine crystalline phase by diffraction pattern analysis using TEM. The as-deposited films on silicon were annealed at a temperature of $700^{\circ}C$. A 20-${\mu}m$ thick PZT film was torn out as a result of the high compressive stress between the PZT film and substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.22-22
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• 2009

The silver thick film has been used in many industries such as display, chip, solar cell, automobile, and decoration with conventional heating. The silver thick film is fired with optimal time and temperature. However, decreasing the fabrication time is required due to high production power. Furthermore, there is a problem that silver in electrode is diffused throughout any substrates. For inhibiting the Ag diffusion and long fabrication time we considered a microwave heating. We investigated firing of silver thick film with conventional and microwave heating. The temperature of substrate was measured by thermal paper and the temperature of substrate was under $100\;^{\circ}C$ The shrinkage of electrode was measured with optical microscopy and optical profilometry. The shrinkage of electrode heat treated with microwave for 5min was similar to the that fired by the conventional heating for several hours. After firing by two types of heating, the diffusion of silver was determined using a optical microscope. The microstructure of sintered silver thick film was observed by SEM. Based on our results, the microwave heating should be a candidate heating source for the fabrication electronic devices in terms of saving the tact time and preventing the contamination of substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.400-403
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• 2004

The dielectric properties of $BaTiO_3/SrTiO_3$ multilayered thick films with printing times were investigated. $BaTiO_3/SrTiO_3$ thick films were deposited by Screen-printing method on alumina substrates. The obtained films were sintered at $1400^{\circ}C$ with bottom electrode(Pt) for 2hours. The structural and the dielectric properties were investigated for various printing times. The BST phase appeared in all of the $BaTiO_3/SrTiO_3$ mutilayered thick films. The $BaTiO_3/SrTiO_3$ multilayered thick film thickness, obtained by one printings, was $50{\mu}m$. The dielectric constant and dielectric loss of the $BaTiO_3/SrTiO_3$ multilayered thick film, obtained by five printings, were about 266, 0.8% at 1Mhz, respectively.

• Applied Chemistry for Engineering
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• v.21 no.4
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• pp.411-416
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• 2010

In this research, we intended to improve the tolerance of thick film resistor using photosensitive polymer resistor paste which was fabricated with alkali-solution developable photosensitive resin and conductive carbon black. At first, we investigated the effect of the selection of carbon black and photosensitive resin on the resistance range and tolerance level of polymer thick film resistor (PTFR). And then, a difference in resistance tolerance was evaluated according to the coating methods of photosensitive resistor paste on test board. In case that the photosensitive resistor paste was coated on whole surface of test board using screen printing, large positional tolerance was obtained because the formation of the thick film with uniform thickness was difficult. On the other hand, when the paste was coated with roller, the resistive thick film with uniform thickness was formed on the whole board area and the result of resistance evaluation showed low tolerance in ${\pm}10%$ range. The tolerance of PTFR could be improved by combination of the precise patterning using photo-process and the coating process for the resistive thick film with uniform thickness.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.5
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• pp.218-227
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• 2021

A thick film NTC thermistor for low temperature co-firing was manufactured by printing and sintering a paste prepared using NTC powder of Mn_1.5Ni_0.4Co_0.9Cu_0.4O₄ composition, lead free frit, and RuO₂ on a 96 % alumina substrate. The effect of frit and RuO₂ on the electrical properties of thick film NTC thermistor was studied. The resistance of the thick film NTC thermistor was higher than that of the bulk phase sintered at the same temperature, but it was found that the negative resistance temperature characteristic appeared more clearly and linearly in the resistance - temperature characteristic. On the other hand, the area resistance decreased as the sintering temperature increased, and the area resistance increased as the amount of frit added increased. The B constant of the thick film NTC thermistor was 3000 K or higher. Among them, it was found that the B constant of the thick film NTC thermistor made of paste with 5 wt% of frit added and sintered at 900℃ showed the highest B constant. Also, it can be seen that the area resistance decreased with the addition of RuO₂, and the change in the area resistance decrease of the thick film NTC thermistor obtained by sintering the paste containing 5 wt% of RuO₂ at 900℃ is the most obvious.

• Transactions of the Korean hydrogen and new energy society
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• v.18 no.3
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• pp.334-341
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• 2007

Al film(135.5 nm thick) with Pd film(39.6 nm thick) was made by thermal evaporation method. Electrical resistance change by hydrogen absorption and desorption was measured with four point measurement method. Even though Al film(135.5 nm thick) did not absorb any hydrogen at room temperature, Al/Pd film absorbed hydrogen at upto 640 torr pressure. Hydrogen absorption kinetics was monitored by measuring resistance change of the sample in the temperature range from $25^{\circ}C$ to $40^{\circ}C$. Absorption activation energy of Al/Pd film was about 10.7 and 17.7 kcal/mol H for 1st stage and last stage respectively at 1 torr hydrogen pressure. This activation values are bigger than that of Pd film, but are much less than that of Al film. This result indicates there is possibility that Al can be storage material for hydrogen by using Pd film evaporation on it.