• Journal of Sensor Science and Technology
• /
• v.7 no.3
• /
• pp.211-217
• /
• 1998

Si and ITO-coated #7059 glass wafers were electrostatically bonded by employing #7740 interlayer. It was inferred that the thermionic- electrostatic migration of $Na^{+}$ ions in the #7740 interlayer played an important role in the bonding process through SIMS analysis. The temperature and voltage required for reliable electrostatic bonding were in the range of $180{\sim}200^{\circ}C$ and $50{\sim}70V_{dc}$(10min), respectively. The low temperature Si-ITO coated glass bonding can be effectively applied to the packaging of field emission devices.

• Korean Journal of Materials Research
• /
• v.27 no.7
• /
• pp.364-368
• /
• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.3
• /
• pp.151-155
• /
• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.266-270
• /
• 2011

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.2
• /
• pp.887-890
• /
• 2005

The double gate(DG) MOSFET is a promising candidate to further extend the CMOS scaling and provide better control of short channel effect(SCE). DGMOSFETs, having ultra thin updoped Si channel for SCEs control, are being validated for sub-20nm scaling, A channel effects such as the subthreshold swing(SS), and the threshold voltage roll-off(${\Delta}V_{th}$). The propsed model includes the effects of thermionic emission and quantum tunneling of carriers through the source-drain barrier. The proposed model is used to design contours for gate length, channel thickness, and gate oxide thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.12a
• /
• pp.87-90
• /
• 2006

Two SiC radiation detector samples were irradiated by Co-60 gamma rays. The irradiation was performed with dose rates of 5 kGy/hour and 15 kGy/hour for 8 hours, respectively. Metal/semiconductor contacts on the surface were fabricated by using a thermal evaporator in a high vacuum condition. The SiC detectors have metal contacts of Au(2000 ${\AA}$)/Ni(300 ${\AA}$) at Si-face and of Au(2000 ${\AA}$)/Ti(300 ${\AA}$) at C-face. I-V characteristics of the SiC semiconductor were measured by using the Keithley 4200-SCS parameter analyzer with voltage sources included. From the I-V curve, we analyzed the Schottky barrier heights(SBHs) on the basis of the thermionic emission theory. As a result, the 6H-SiC semiconductor showed- similar Schottky barrier heights independent to the dose rates of the irradiation with Co-60 gamma rays.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2006.05a
• /
• pp.861-864
• /
• 2006

In this paper conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to obtain the analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper is compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gateoxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according to channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.12 no.3
• /
• pp.541-546
• /
• 2008

In this paper, conduction phenomena have been considered for nano structure double gate MOSFET, using the analytical model. The Possion equation is used to analytical model. The conduction mechanisms to have an influence on current conduction are thermionic emission and tunneling current, and subthreshold swings of this paper are compared with those of two dimensional simulation to verify this model. The deviation of current path and the influence of current path on subthreshold swing have been considered according to the dimensional parameters of double gate MOSFET, i.e. gate length, gate oxide thickness, channel thickness. The optimum channel doping concentration is determined as the deviation of conduction path is considered according doping concentration.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.182.1-182.1
• /
• 2016

전자빔의 운동에너지를 변화시켜 전자기장을 발생시키는 진공튜브 장치는 기본적으로 전자빔 발생부인 전자총을 핵심 구성부로 사용한다. 이러한 전자총을 이용하는 진공튜브로는 핵융합을 위해 플라즈마 가열용의 RF를 발생시키는 자이로트론 튜브와 방사광 가속기에서 전자를 가속시키는데 이용되는 클라이스트론 튜브 등이 있으며, 군사적으로는 레이더를 비롯하여 유도미상일에 들어가는 탐색기, 전투기에서 사용되는 송수신용 마이크로파 발생장치 등의 핵심부품인 진행파관 진공튜브 등이 있다. 이러한 응용분야에서는 기본적으로 고출력의 전자파를 필요로 하기 때문에 반도체를 이용한 장치로는 그 성능을 구현할 수 없다. 따라서 열음극을 사용하는 전자총을 기반으로 한 다양한 형태의 진공튜브 장치가 주로 이용되고 있다. 현재 고출력 마이크로파 진공튜브용 열음극 전자총은 대부분 외국에서 수입하고 있는데 그 이유는 전자총의 핵심 부품인 열음극 캐소드를 국내에서 개발하지 못하였기 때문이다. 하지만 본 연구에서는 텅스텐 기반의 함침형 열음극 캐소드를 국내에서 자체 개발하는데 성공하였다. 전통적으로 미국에서 개발해온 함침형 열음극 캐소드는 텅스텐 소결체에 기공을 학보하고 여기에 Ba을 중심으로 한 알칼리성 물질들을 일정비율로 혼합하여 함침한 것으로 일함수 2.1~2.3 eV 수준의 물성을 갖는다. 이에 따라 방출할 수 있는 전류의 양은 운용 온도 $1000^{\circ}C$ 정도에서 전류밀도로 대략 수 $A/cm^2$ 수준이다. 본 연구에서 개발한 캐소드는 S-type으로 알려진 것으로 BaO : CaO : $Al_2O_3$ = 4 : 1 : 1 비율로 함침되었다. 고진공장치에서 전류측정 결과 $1040^{\circ}C$에서 $10.6A/cm^2$의 전류밀도를 기록하였으며 이에 대하여 Richardson-Dushman equation으로 계산하였을 때, 약 1.9 eV의 일함수를 갖는 것을 알 수 있었다. 이는 현재 많은 응용분야에서 사용하고 있으며 함침형 캐소드에 Os이나 Ir 등의 물질을 코팅하여 일함수를 낮추고 전류밀도를 향상시킨 M-type 캐소드의 결과와 유사한 수준이다.

• ETRI Journal
• /
• v.24 no.5
• /
• pp.349-359
• /
• 2002

With Ni/Au and Pd/Au metal schemes and low temperature processing, we formed low resistance stable Ohmic contacts to p-type GaN. Our investigation was preceded by conventional cleaning, followed by treatment in boiling $HNO_3$:HCl (1:3). Metallization was by thermally evaporating 30 nm Ni/15 nm Au or 25 nm Pd/15 nm Au. After heat treatment in $O_2$ + $N_2$ at various temperatures, the contacts were subsequently cooled in liquid nitrogen. Cryogenic cooling following heat treatment at $600^{\circ}C$ decreased the specific contact resistance from $9.84{\times}10^{-4}$ ${\Omega}cm^2$ to $2.65{\times}10^{-4}$ ${\Omega}cm^2$ for the Ni/Au contacts, while this increased it from $1.80{\times}10^{-4}$ ${\Omega}cm^2$ to $3.34{\times}10^{-4}$ ${\Omega}cm^2$ for the Pd/Au contacts. The Ni/Au contacts showed slightly higher specific contact resistance than the Pd/Au contacts, although they were more stable than the Pd contacts. X-ray photoelectron spectroscopy depth profiling showed the Ni contacts to be NiO followed by Au at the interface for the Ni/Au contacts, whereas the Pd/Au contacts exhibited a Pd:Au solid solution. The contacts quenched in liquid nitrogen following sintering were much more uniform under atomic force microscopy examination and gave a 3 times lower contact resistance with the Ni/Au design. Current-voltage-temperature analysis revealed that conduction was predominantly by thermionic field emission.