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http://dx.doi.org/10.3740/MRSK.2017.27.7.364

Improving Interface Characteristics of Al2O3-Based Metal-Insulator-Semiconductor(MIS) Diodes Using H2O Prepulse Treatment by Atomic Layer Deposition  

Kim, Hogyoung (Department of Visual Optics, Seoul National University of Science and Technology)
Kim, Min Soo (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Ryu, Sung Yeon (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Choi, Byung Joon (Department of Materials Science and Engineering, Seoul National University of Science and Technology)
Publication Information
Korean Journal of Materials Research / v.27, no.7, 2017 , pp. 364-368 More about this Journal
Abstract
We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.
Keywords
$H_2O$ prepulse treatment; atomic layer deposition(ALD); $Al_2O_3$ interlayer;
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