• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.361-366
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• 2004

The interface stability of Ta-Mo alloy film on SiO$_2$ was investigated. Ta-Mo alloy films were formed by co-sputtering method, and the alloy composition was varied by controlling Ta and Mo sputtering power, When the atomic composition of Ta was about 91％, the measured work function was 4.24 eV that is suitable for NMOS gate. To identify interface stability between Ta-Mo alloy film and SiO$_2$, C-V and XRD measurements were performed on the samples annealed with rapid thermal processor between $600^{\circ}C$ and 90$0^{\circ}C$. Even after 90$0^{\circ}C$ rapid thermal annealing, excellent interface stability and electrical properties were observed. Also, thermodynamic analysis was studied to compare with experimental results.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.1
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• pp.201-208
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• 1991

In case that an interface crack exists in an infinite two-dimensional elastic bimaterial, the crack surface is insulated under traction free and the uniform heat flow vertical to the crack from infinite boundary is given. Temperature and stress potentials are obtained by using complex variable approach to solve Hilbert problems. The results are used to obtain thermal stress intensity factors. Only mode I thermal stress intensity factor occurs in case of the homogeneous material. Otherwise, mode I and II thermal stress intensity factor is much smaller than one of mode II.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.526-530
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• 2004

We report the space charge and the surface potential of the interface between metal and CuPc according to isotropic property and different metal by measuring the microwave reflection coefficients $S_{11}$ of copper(II)-phthalocyanine(CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand. CuPc thin films were prepared on gold and aluminium substrates using a thermal evaporation method. Two kinds of CuPc thin films were prepared. One was deposited on preheated substrate at $150^{\circ}C$ and the other was annealed after deposition by using thermal evaporation methods. The microwave reflection coefficients $S_{11}$ of CuPc thin films were changed by the dependence on the heat treatment conditions. By comparing reflection coefficient $S_{11}$ we measured electrical conductivity of CuPc thin films and studied this results with respect to the surface potential and space charge of the interface between metal and CuPc thin films.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.7 no.4
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• pp.556-565
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• 1995

The physical model of interest is based upon the concentric cylinder, where the outside cylinder is filled with optically thick and high temperature phase change material(PCM). The fluid is flowing through the inside cylinder to transfer the appropriate energy. The fluid is flowing through the inside cylinder to transfer the appropriate energy. The governing equations for the phase change material including internal thermal radiation and for the turbulent transfer fluid have been employed and numerically solved. The optically thick phase change justifies the P-l spherical harmonics approximation, which is believed to be appropriate choice particularly for the much coupled problem like in this study. The solid/liquid interface, temperature distribution within the PCM and the heat flux from the PCM to the transfer fluid have been obtained and compared with those of laminar transfer fluid. The numerical results show that the turbulent transfer fluid accelerates the solid/liquid interface and results in the increase of heat transfer rate from the PCM. The internal thermal radiation within the PCM, however, does not always playa role to increase the heat transfer rate throughout the inside cylinder. It is believed that the combined heat flux has been picked up more in the inflowing area than in the pure conductive phase change material.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.221-228
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• 2017

Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu ($0.1{\mu}m$ and $7{\mu}m$) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at $75^{\circ}C$. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from $0.1{\mu}m$ Cu particles increased by 192.5 % and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

• Applied Chemistry for Engineering
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• v.21 no.2
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• pp.115-128
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• 2010

Recently the use heat sink material grows where the polymer filled with thermal conductive fillers effectively dissipates heat generated from electronic components. Therefore the management of heat is directly related to the lifetime of electronic devices. For the purpose of improving thermal conductivity of composites, fillers with excellent thermaly conductive behavior are commonly used. Polymer composites filled with thermally conductive particles have advantages due to their processibility, cheap price, and durability to the corrosion. This paper aims to review the thermal interface materials and their model equations for predicting the thermal conductivity of polymer composites, and to introduce the commercial thermal conductive fillers and their applications.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.479-485
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• 2006

The residual stress changes on thermo-mechanical loading in the interface region of the Thermal Barrier Coating (TBC)/Thermally Grown Oxide (TGO)/Bond Coat (BC) were calculated on the TBC-coated superalloys using a Finite Element Method (FEM). It was found that the residual stress of the interface boundary was dependent upon mainly the oxide formation and the swelling rate of the oxide by creep relaxation. During an oxide swelling, the relaxation of residual stress which is due to creep deformation increased the TBC's life. In the case of the fine grain size of TGO scale, the TBC stresses piled up by oxide swelling could be relaxed by diffusional creep effect of TGO.

• Journal of Adhesion and Interface
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• v.7 no.4
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• pp.45-52
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• 2006

Five low molar ratio urea-formaldehyde (LUF) resins were synthesized in this study. The effects of molar ratio, free formaldehyde content, and catalysts on the curing characteristics of LUF resins were studied by measuring its free formaldehyde content, pH value change after catalysts added, curing rate, and pot life, observing its cured appearance, and analyzing its thermal behavior. The results indicate that: 1) The LUF resin with lower molar ratio than 1.0 can still cure; 2) Free formaldehyde content is not the main factor in affecting curing rate of LUF resin; 3) Compared with ammonium chloride as a traditional catalyst, persulfate salts markedly accelerate the curing rate of LUF resin, and result in the different appearance; 4) the addition of sodium chloride to catalysts can accelerate the curing rate of LUF resin, but the effect is moderate.

• Corrosion Science and Technology
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• v.14 no.4
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• pp.161-165
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• 2015

This paper presents an analysis of thermal stress induced along the interface between a polymeric coating layer and a steel substrate as a result of uniform temperature change. The epoxy layer is assumed to be a linear viscoelastic material and to be theromorheologically simple. The viscoelastic boundary element method is employed to investigate the behavior of interface stresses. The numerical results exhibit relaxation of interface stresses and large stress gradients, which are observed in the vicinity of the free surface. Since the exceedingly large stresses cannot be borne by the polymeric coating layer, local cracking or delamination can occur at the interface corner.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.198-202
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• 2018

In this work, we have investigated the effect of a 30-min thermal anneal at $550^{\circ}C$ on the electrical characteristics of neutron-irradiated 4H-SiC MOSFETs. Thermal annealing can recover the on/off characteristics of neutron-irradiated 4H-SiC MOSFETs. After thermal annealing, the interface-trap density decreased and the effective mobility increased in terms of the on-characteristics. This finding could be due to the improvement of the interfacial state from thermal annealing and the reduction in Coulomb scattering due to the reduction in interface traps. Additionally, in terms of the off-characteristics, the thermal annealing resulted in the recovery of the breakdown voltage and leakage current. After the thermal annealing, the number of positive trapped charges at the MOSFET interface was decreased.