참고문헌
- ICE2OOO Proc. Problems and solutions for downsizing CMOS below 0. 1 ㎛ H.lwai;S.I.Ohmi https://doi.org/10.1109/SMELEC.2000.932298
- IEEE Trans. Electron Dev. v.49 no.7 Dopant profile and gate geometric effects on polysilicon gate depletion in scaled MOS C.H.Choi;P.R.Chidambaram;R.Kllamankar;C.F.Machala;Z.Yu;R.W.Dutton https://doi.org/10.1109/TED.2002.1013280
-
J. Appl. Phys.
v.83
no.9
Properties of amorphous and crystalline Ta₂
$O_5$ thin films deposited on Si from a Ta(OC₂$H_{5})_{5}$ precursor C.Chaneliere;S.Four;J.L.Autran;R.A.B.Devine;N.P.Sandler https://doi.org/10.1063/1.367277 - IEEE Electron Device Lett. v.23 no.1 An adjustable work function technology using Mo gate for CMOS devices R.Lin;Q.Lu;P.Ranade;T.J.King;C.Hu https://doi.org/10.1109/55.974809
-
전기전자재료학회 논문지
v.12
no.7
센서 기능성 박막 · 레이저 공정 변수에 따른 고유전율 (
$Pb_{0.72}La_{0.28}) Ti_{0.93}O_{3}$ 박막 특성 변화 심경석;이상렬 - 전기전자재료학회논문지 v.9 no.6 A1₂O₃가 첨가된 ZnO 의 전기적 특성 최우성;소병문;홍친웅
- 전기전자재료학회논문지 v.7 no.1 Al₂O₃ 절연 박막의 형성과 그 활용방안에 관한 연구 김종열;정종척;박용희;성만영
- Appl. Phys. Lett. v.78 no.26 Use of metal oxide- semiconductor capacitors to detect interactions of Hf and Zr gate electrode with SiO₂and ZrO₂ V.Misra;G.P.Heuss;H.Zhong https://doi.org/10.1063/1.1380240
- Charac- terization of ultrathin oxides using electrical C- V and l- V measurements J.R.Hauser;K.Ahmed
- OH: ASM intemational Binary A1loy Phase Djagrams. ASM H.Baker
- Elements of X- ray Diffraction B.D.Culhty
- IEEE Trans. Electron Dev. v.47 no.11 Chemical reaction concems of gate metal with gate dielectric in Ta gate MOS device: An effect of self seaiing barrier configuration interposed between Ta and SiO₂ T.Ushiki;K.Kawai;1.Ohshima;T.Ohmi https://doi.org/10.1109/16.877184
- Appl. Phys. Lett. v.78 no.8 Characterization of RuO₂ electrode on Zr sihcate and ZrO₂ dielectrics H.Zhong;G.Heuss;V.Misra https://doi.org/10.1063/1.1347402
- Introduction to Metallurgical Thermodynamics D.R.Gasken
- Thermochemical data of pure substances I.Brain
- J. Appl. Phys. v.56 no.1 Thermodynamic considerations in refractory metal-silicon-oxygen systems R.Beyers https://doi.org/10.1063/1.333738