• 한국정밀공학회지
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• 제30권9호
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• pp.943-950
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• 2013

This paper describes the thermal contact resistance and its effect on the performance of thermal interface material. An ASTM D 5470 based apparatus is used to measure the thermal interface resistance. Bulk thermal conductivity of different interface material is measured and compared with manufacturers' data. Also, the effect of grease void in the contact surface is investigated using the same apparatus. The flat type thermal interface tester is proposed and compared with conventional one to consider the effect of lateral heat flow. The results show that bulk thermal conductivity alone is not the basis to select the interface material because high bulk thermal conductivity interface material can have high thermal contact resistance, and that the center voiding affects the thermal interface resistance seriously. On the aspect of heat flow direction, thermal impedance of the lateral heat flow shows higher than that of the longitudinal heat flow by sixteen percent.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• 대한기계학회논문집
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• 제17권7호
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• pp.1794-1804
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• 1993

The thermal stress intensity factors for interface cracks of Griffith and symmetric lip cusp types under vertical uniform heat flow in a finite body are calculated by boundary element method. The boundary conditions on the crack surfaces are insulated or fixed to constant temperature. The relationship between the stress intensity factors and the displacements on the nodal point of a crack tip element is derived. The numerical values of the thermal stress intensity factors for interface Griffith crack in an infinite body and for symmetric lip cusp crack in a finite and homogeneous body are compared with the previous solutions. The thermal stress intensity factors for symmetric lip cusp interface crack in a finite body are calculated with respect to various effective crack lengths, configuration parameters, material property ratios and the thermal boundary conditions on the crack surfaces. Under the same outer boundary conditions, there are no appreciable differences in the distribution of thermal stress intensity factors with respect to each material properties. But the effect of crack surface thermal boundary conditions on the thermal stress intensity factors is considerable.

• 한국산업융합학회 논문집
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• 제22권6호
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• pp.767-773
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• 2019

The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

• 한국정밀공학회지
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• 제27권1호
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• pp.91-98
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• 2010

The increasing of power and processing speed and miniaturization of central processor unit (CPU) used in electronics equipment requires better performing thermal management systems. A typical thermal management package consists of thermal interfaces, heat dissipaters, and external cooling systems. There have been a number of experimental techniques and procedures for estimating thermal conductivity of thin, compressible thermal interface material (TIM). The TIM performance is affected by many factors and thus TIM should be evaluated under specified application conditions. In compact packaging of electronic equipment the chip is interfaced with a thin heat spreader. As the package is made thinner, the coupling between heat flow through TIM and that in the heat spreader becomes stronger. Thus, a TIM characterization system for considering the heat spreader effect is proposed and demonstrated in detail in this paper. The TIM test apparatus developed based on ASTM D-5470 standard for thermal interface resistance measurement of high performance TIM, including the precise measurement of changes in in-situ materials thickness. Thermal impedances are measured and compared for different directions of heat dissipation. The measurement of the TIM under the practical conditions can thus be used as the thermal criteria for the TIM selection.

• 한국세라믹학회지
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• 제43권7호
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• pp.415-420
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• 2006

The residual stresses in the interface region of the Thermal Barrier Coating (TBC)/Thermally Grown Oxide (TGO)/Bond Coat (BC) were calculated on the TBC-coated superalloy samples using a Finite Element Method (FEM). It was found that the stress distribution of the interface boundary was dependent upon mainly the geometrical shape or its aspect ratio and the thickness of TGO layer, which was formed by growth and swelling behavior of oxide layer. Maximum compressive residual stress in the TBC/TGO interface is higher than that of the TGO/bond coat interface, and the tensile stress had nothing to do with change of an aspect ratio. The compressive residual stresses in the TBC/TGO and TGO/bond coat interface region increased gradually with the TGO growth.

• 한국전산유체공학회지
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• 제3권1호
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• pp.100-107
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• 1998

A numerical analysis of thermal stress over temperature variations near the crystal-melt interface is carried out for a floating-zone growth of Cadmium Telluride (CdTe). Thermocapillary convection determines crystal-melt interfacial shape and signature of temperature in the crystal. Large temperature gradients near the crystal-melt interface yield excessive thermal stresses in a crystal, which affect the dislocations of the crystal. Based on the assumption that the crystal is elastic and isotropic, thermal stresses in a crystal are computed and the effects of operating conditions are investigated. The results show that the extreme thermal stresses are concentrated near the interface of a crystal and the radial and the tangential stresses are the dominant ones. Concentrated heating profile increases the stresses within the crystal, otherwise, the pulling rate decreases the stresses.

• 대한기계학회논문집B
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• 제24권12호
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• pp.1635-1643
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• 2000

The present work investigates a heat transfer phenomenon at the interface between a porous medium and an impermeable wall. In an effort to appropriately describe the heat transfer phenomenon at the interface, the heat transfer at the interface between the microchannel heat sink, which is an ideally organized porous medium, and the finite-thickness substrate is examined. From the examination, it is clarified that the he heat flux distribution at the interface is not uniform for the impermeable wall with finite thickness. On the other hand, the first approach, based on the energy balance for the representative elementary volume in the porous medium, is physically reason able. When the first approach is applied to the thermal boundary condition, and additional boundary condition based on the local thermal equilibrium assumption at the interface is used. This additional boundary condition is applicable except for the very th in impermeable wall. Hence, for practical situations, the first approach in combination with the local thermal equilibrium assumption at the interface is suggested as an appropriate thermal boundary condition. In order to confirm our suggestion, convective flows both in a microchannel heat sink and in a sintered porous channel subject to a constant heat flux condition are analyzed. The analytically obtained thermal resistance of the microchannel heat sink and the numerically obtained overall Nusselt number for the sintered porous channel are shown to be in close agreement with available experimental results when our suggestion for the thermal boundary conditions is applied.

• Journal of Welding and Joining
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• 제13권2호
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• pp.82-95
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• 1995

This paper discusses distribution of thermal stress, strain at near the joint and investigates the reliability of solder joints of electronic devices on a printed circuit board. As Electronic devices are composed of different materials, thermal stresses generate at near the interface, such as solder joints and interface between lC device and lead frame pad due to the differences of thermal expansion coefficients, As results of thermal stress, strain, micro crack often occurs thermal fatigue fracture at the interface of different materials, The initiation and propagation of micro crack depend on the environmental conditions, such as storage temperature and thermal cycling. Finally, this paper experimentally shows a way to suppress micro cracks by using Fe-Ni alloy clad lead frame, and investigates crack and thermal fatigue fracture of TSOP(Thin small outline package) type on printed circuit board.

• 한국결정성장학회지
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• 제9권4호
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.