• 전기전자학회논문지
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• 제8권1호
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• pp.47-53
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• 2004

본 논문에서는 3치 논리 게이트를 바탕으로 하는 3치 데이터 처리를 위한 3치 flip-flop을 설계하였다. 제안한 flip-flop들은 3치 전압 모드 NMAX, NMIN, INVERTER 게이트를 사용하여 설계하였다. 또한 CMOS 기술을 사용하였고 다른 게이트들 보다 낮은 공급 전압과 낮은 전력소모 특성을 포함하고 있다. 제안한 회로는 0.35um 표준 CMOS 공정에서 설계되었고 3.3v의 공급 전압원을 사용하였다. 제안된 3치 flip-flop 구조는 3치 논리 게이트를 사용하여 VLSI 구현에 적합하고 높은 모듈성의 장점을 갖고 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -1
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• pp.347-350
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• 2000

We present the design of ternary flip-flop which is based on ternary logic so as to process ternary data. These flip-flops are fabricated with ternary voltage mode NOR, NAND, INVERTER gates. These logic gate circuits are designed using CMOS and obtained the characteristics of a lower voltage, a lower power consumption as compared to other gates. These circuits have been simulated with the electrical parameters of a standard 0.25 micron CMOS technology and 2.5 volts supply voltage. The Architecture of proposed ternary flip-flop is highly modular and well suited for VLSI implementation, only using ternary gates.

• 전기의세계
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• 제28권1호
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• pp.43-52
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• 1979

Recently, interest in multivalued(MV) logic system has been increased, despites the apparent difficulties for practical application. This is because of the many advantages of the MV compared with the 2-valued logic systems, such as; (a) higher speed of arithmetical operation on account of the smaller number of digits required for a given data, (b) better utilization of data transmission channels on account of the higher information contents per line, (c) potentially higher density of information storage. This paper describes a MV switching theory and experimental MV logic elements based on current-mode logic technique. These elements tried were a 3-stable pulse generator, a ternary AND, a ternary OR, a MT circuit and a ternary inverter. Tristable flops which are indispensable for constituting a ternary shift register are synthesized using these gates. A BCD to TCD decoder, and vice versa, are proposed by using a ternary inverter and some binary gates. Thus, the feasibility of a large scale MV digital system has been demonstrate.

• 대한전자공학회논문지SD
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• 제40권10호
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• pp.52-62
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• 2003

본 논문에서는 3치 논리 게이트, 3치 D 플립플롭과 3치 4-디지트 병렬 입력/출력 레지스터를 제안하였다. 3치 논리 게이트는 n 채널 패스 트랜지스터와 뉴런 MOS(νMOS) 임계 인버터로 구성된다. 3치 논리 게이트들은 다양한 임계 전압을 갖는 다운 리터럴 회로를 사용하였고 전송함수를 바탕으로 설계되었다. 뉴런 MOS 트랜지스터는 다치 논리 구현에 가장 적합한 게이트이고 다양한 레벨의 입력 신호를 갖는다. 3치 D 플립 플롭과 3치 레지스터는 3치 데이터를 임시로 저장할 수 있는 저장 장치로 사용할 수 있다. 본 논문에서는 3.3V의 전원 전압을 사용하였고 0.35um 공정 파라미터를 이용하여 모의 실험을 통해 그 결과를 HSPICE로 검증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년 학술대회 논문집 정보 및 제어부문
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• pp.142-144
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• 2006

In this paper, the Ternary adder and multiplier are implemented by current-mode CMOS. First, we implement the ternary T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second, we implement the circuits to be realized 2-variable ternary addition table and multiplication table over finite fields GF(3) with the ternary T-gates. Finally, these operation circuits are simulated by Spice under $1.5{\mu}m$ CMOS standard technology, $1.5{\mu}m$ unit current, and 3.3V VDD voltage. The simulation results have shown the satisfying current characteristics. The ternary adder and multiplier implemented by current-mode CMOS are simple and regular for wire routing and possess the property of modularity with cell array.

• Nuclear Engineering and Technology
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• 제56권6호
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• pp.2092-2098
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• 2024

Probabilistic safety assessment (PSA) plays a critical role in ensuring the safe operation of nuclear power plants. In PSA, event trees are developed to identify accident sequences that could lead to core damage. These event trees are then transformed into a core-damage fault tree, wherein the accident sequences are represented by usual and complemented logic gates representing failed and successful operations of safety systems, respectively. The core damage frequency (CDF) is estimated by calculating the minimal cut sets (MCSs) of the core-damage fault tree. Delete-term approximation (DTA) is commonly employed to approximately solve MCSs representing accident sequence logics from noncoherent core-damage fault trees. However, DTA can lead to an overestimation of CDF, particularly when fault trees contain many nonrare events. To address this issue, the present study introduces a new zero-suppressed ternary decision diagram (ZTDD) algorithm that averts the CDF overestimation caused by DTA. This ZTDD algorithm can optionally calculate MCSs with DTA or prime implicants (PIs) without any approximation from the core-damage fault tree. By calculating PIs, accurate CDF can be calculated. The present study provides a comprehensive explanation of the ZTDD structure, formula of the ZTDD algorithm, ZTDD minimization, probability calculation from ZTDD, strength of the ZTDD algorithm, and ZTDD application results. Results reveal that the ZTDD algorithm is a powerful tool that can quickly and accurately calculate CDF and drastically improve the safety of nuclear power plants.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.