• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.618-622
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• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.186-187
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• 2007

In this work, a temperature stable PWM(Pulse width modulation) circuit is proposed. The designed PWM circuit has a temperature dependent current source and a temperature independent voltage to compensate electrical characteristics with operating temperature. The variation of driving current is from about 4% to -6% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$ compared to the current at the room temperature. The variation of bandgap voltage reference is from about 1.3% to -0.2% with temperature when the supply voltage is 3.3 volts. From simulation results, the variation of output pulse width is less than from 0.86% to -0.38% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$.

• Structural Engineering and Mechanics
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• v.68 no.3
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• pp.313-323
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• 2018

A numerical study is performed to investigate the impacts of thermal loading on the vibration and buckling of functionally graded carbon nanotube-reinforced composite (FG-CNTRC) conical shells. Thermo-mechanical properties of constituents are considered to be temperature-dependent. Considering the shear deformation theory, the energy functional is derived, and applying the variational differential quadrature (VDQ) method, the mass and stiffness matrices are obtained. The shear correction factors are accurately calculated by matching the shear strain energy obtained from an exact three-dimensional distribution of the transverse shear stresses and shear strain energy related to the first-order shear deformation theory. Numerical results reveal that considering temperature-dependent material properties plays an important role in predicting the thermally induced vibration of FG-CNTRC conical shells, and neglecting this effect leads to considerable overestimation of the stiffness of the structure.

• Structural Engineering and Mechanics
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• v.53 no.6
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• pp.1167-1182
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• 2015

In this study, the stresses and electric potential redistributions of a cylinder made from functionally graded piezoelectric material (FGPM) are investigated. All the mechanical, thermal and piezoelectric properties are modeled as power-law distribution of volume fraction. Using the coupled electro-thermo-mechanical relations, strain-displacement relations, Maxwell and equilibrium equations are obtained including the time dependent creep strains. Creep strains are time, temperature and stress dependent, the closed form solution cannot be found for this constitutive differential equation. A semi-analytical method in conjunction with the Mendelson method of successive approximation is therefore proposed for this analysis. Similar to the radial stress histories, electric potentials increase with time, because the latter is induced by the former during creep deformation of the cylinder, justifying industrial application of such a material as efficient actuators and sensors.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.291.1-291.1
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• 2013

We examined the temperature-dependent structural and magnetic properties of HgI2 in the temperature range of 300~400 K. HgI2 is a diamagnetic material and can be used for X-ray or γ-ray detectors. DCmagnetization measurements on HgI2 showed that there is a small but distinguishable change in its diamagnetic properties near 375 K. The magnetic property change is not expected because Hg and I are known as nonmagnetic elements. X-ray diffraction (XRD) measurements revealed a structural transition in the temperature of 350~400 K. Temperature-dependent x-ray absorption fine structure (XAFS) demonstrated that the chemical valence states of both Hg and I did not changed in the temperature range of 300~400 K. However, XAFS revealed that the bond-length disorder was slightly increased in the temperature range, particularly, near Hg atoms. The structural changes of HgI2 are likely related to its diamagnetic property change. We will discuss the relation between the diamagnetic properties and local structural properties of HgI2 in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.113-113
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• 2005

• Structural Engineering and Mechanics
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• v.20 no.4
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• pp.435-450
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• 2005

Here, the dynamic instability characteristics of aero-thermo-mechanically stressed functionally graded plates are investigated using finite element procedure. Temperature field is assumed to be a uniform distribution over the plate surface and varied in thickness direction only. Material properties are assumed to be temperature dependent and graded in the thickness direction according to simple power law distribution. For the numerical illustrations, silicon nitride/stainless steel is considered as functionally graded material. The aerodynamic pressure is evaluated based on first-order high Mach number approximation to the linear potential flow theory. The boundaries of the instability region are obtained using the principle of Bolotin's method and are conveniently represented in the non-dimensional excitation frequency-load amplitude plane. The variation dynamic instability width is highlighted considering various parameters such as gradient index, temperature, aerodynamic and mechanical loads, thickness and aspect ratios, and boundary condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.291-294
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• 1998

The objective of this study is to deposited the preparation of STO dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.207-210
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• 1999

The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.