Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1998.11a
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- Pages.291-294
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- 1998
The electrical characteristics of STO dielectric thin films for application of DRAM capacitor.
DRAM 캐패시터 응용을 위한 STO 유전체 박막의 전기적인 특성
Abstract
The objective of this study is to deposited the preparation of STO dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.
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