• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.05a
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• pp.1023-1026
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• 2007

Optimal damping layout of the constrained viscoelastic damping layer on beam is identified with temperatures by using a gradient-based numerical search algorithm. An optimal design problem is defined in order to determine the constrained damping layer configuration. A finite element formulation is introduced to model the constrained damping layer beam. The four-parameter fractional derivative model and the Arrhenius shift factor are used to describe dynamic characteristics of viscoelastic material with respect to frequency and temperature. Frequency-dependent complex-valued eigenvalue problems are solved by using a simple resubstitution algorithm in order to obtain the loss factor of each mode and responses of the structure. The results of the numerical example show that the proposed method can reduce frequency responses of beam at peaks only by reconfiguring the layout of constrained damping layer within a limited weight constraint.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.443-449
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• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• The Journal of the Acoustical Society of Korea
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• v.38 no.2
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• pp.214-221
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• 2019

In this paper, a temperature dependent acoustic receiving characteristics of underwater acoustic sensor is studied by theoretical and experimental investigations. Two different types (low mid frequency sensor and high frequency sensor) of underwater acoustic sensors are designed with different configuration of baffle and conditioning plate. The temperature dependent characteristics of the acoustic sensors are investigated within the temperature range from $-2^{\circ}C$ to $35^{\circ}C$. The material properties of the piezoelectric ceramics, molding and baffle, which are the primary materials of the acoustic sensors, are measured with temperature change. The temperature dependent RVS (Receiving Voltage Sensitivity) characteristics of the acoustic sensors are simulated by using the measured material properties. The RVS changes of the acoustic sensors are measured by changing temperature in the watertank where the acoustic sensors are installed. The measured and the simulated data show that the temperature dependent characteristics of the acoustic sensors are mainly dependent for the sound speed changes of the molding material.

• Structural Engineering and Mechanics
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• v.44 no.1
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• pp.109-125
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• 2012

Post-buckling behavior of Timoshenko beams subjected to uniform temperature rising with temperature dependent physical properties are studied in this paper by using the total Lagrangian Timoshenko beam element approximation. The beam is clamped at both ends. In the case of beams with immovable ends, temperature rise causes compressible forces end therefore buckling and post-buckling phenomena occurs. It is known that post-buckling problems are geometrically nonlinear problems. Also, the material properties (Young's modulus, coefficient of thermal expansion, yield stress) are temperature dependent: That is the coefficients of the governing equations are not constant in this study. This situation suggests the physical nonlinearity of the problem. Hence, the considered problem is both geometrically and physically nonlinear. The considered highly non-linear problem is solved considering full geometric non-linearity by using incremental displacement-based finite element method in conjunction with Newton-Raphson iteration method. The beams considered in numerical examples are made of Austenitic Stainless Steel (316). The convergence studies are made. In this study, the difference between temperature dependent and independent physical properties are investigated in detail in post-buckling case. The relationships between deflections, thermal post-buckling configuration, critical buckling temperature, maximum stresses of the beams and temperature rising are illustrated in detail in post-buckling case.

• Steel and Composite Structures
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• v.38 no.4
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• pp.447-462
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• 2021

In this work, we consider a problem in the context of thermoelectric materials with memory-dependent derivative for a half space which is assumed to have variable thermal conductivity depending on the temperature. The Lamé's modulii of the half space material is taken as a function of the vertical distance from the surface of the medium. The surface is traction free and subjected to a time dependent thermal shock. The problem was solved by using the Laplace transform method together with the perturbation technique. The obtained results are discussed and compared with the solution when Lamé's modulii are constants. Numerical results are computed and represented graphically for the temperature, displacement and stress distributions. Affectability investigation is performed to explore the thermal impacts of a kernel function and a time-delay parameter that are characteristic of memory dependent derivative heat transfer in the behavior of tissue temperature. The correlations are made with the results obtained in the case of the absence of memory-dependent derivative parameters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1088-1091
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1, 1'-diphenyl-4, 4'-diamine (TPD) as a hole transport and trim(8-hydroxyquinoline) alulninum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.370-373
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• 2001

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes (OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and trois(8-hydroxyquinoline) aluminum(Alq$_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.277-283
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• 1996

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.102-104
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• 1996

The fabrication and analytical expression for the temperature dependent capacitance characteristics of inverted staggered hydrogenerated amorphous silicon thin film transistors(a-si :H TFT) from 303k to 363k were presented. The results show that the experimental capacitance-voltage characteristics at several temperatures are easily measured. Capacitance increased exponentially by gate voltage increase and decreased by temperature increase. C/C(max) ratio decreased at higher temperature, C/C(min) ratio increased at higher temperature.