• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1205-1208
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• 1995

The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(${\delta}{\iota}$) between two pulses, but a weak dependence on the width of optical pulse. Actually there is no turn-off delay in gold-doped p-i-n switches and the fall time is negligible.

• Journal of Power Electronics
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• v.13 no.2
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• pp.177-185
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• 2013

This paper studies a soft switching DC/DC converter to achieve zero voltage switching (ZVS) for all switches under a wide range of load condition and input voltage. Two three-level PWM circuits with the same power switches are adopted to reduce the voltage stress of MOSFETs at $V_{in}/2$ and achieve load current sharing. Thus, the current stress and power rating of power semiconductors at the secondary side are reduced. The series-connected transformers are adopted in each three-level circuit. Each transformer can be operated as an inductor to smooth the output current or a transformer to achieve the electric isolation and power transfer from the input side to the output side. Therefore, no output inductor is needed at the secondary side. Two center-tapped rectifiers connected in parallel are used at the secondary side to achieve load current sharing. Due to the resonant behavior by the resonant inductance and resonant capacitance at the transition interval, all switches are turned on at ZVS. Experiments based on a 1kW prototype are provided to verify the performance of proposed converter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.129-129
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• 2009

In this paper, a tunable microstrip patch antenna designed using RF MEMS switches is reported. The design and simulation antenna were performed using high frequency structure simulator (HFSS). The antenna was designed in ISM Band and operates simultaneously at 2.4 GHz and 5.7 GHz with a -10 dB return-loss bandwidth of 20 MHz and 180 MHz, respect-tively. To obtain high efficiency and improve integrated ability, the High Resistivity Silicon (HRS) wafer was used for the antenna. The antenna achieved high gain with 8 dB at 5.7 GHzand 1.5 dB at 2.4 GHz. The RF MEMS DC contact switches was simulated and analysis by ANSYS software.

• Journal of Korean Society for Quality Management
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• v.18 no.2
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• pp.93-99
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• 1990

This paper considers the selection of process plans for a flexible manufacturing machine. Most of the planning models for the automated manufacturing systems are based on the assumption that for each part there is only one process plan available. This paper considers that for each part a number of different process plans are available, each of which may require specific types of tools. If the requisite tools are not on the machine, one or more tool switches must occur before the process plan can be processed. This paper develops an optimal algorithm of branch and bound method for the selection of process plans to minimize the number of tool switches.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.405-406
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• 2016

A bidirectional secondary LLC resonant converter with auxiliary switches and an additional inductor is proposed to achieve the high gain characteristics of LLC resonant convertors. Auxiliary switches, an additional inductor and a resonant capacitor are connected in the high voltage secondary side of the proposed converter. The ac analysis and operating characteristics of bidirectional secondary LLC resonant converter are investigated. A 1kW prototype bidirectional secondary LLC resonant converter connected to the $400V_{DC}$ buses is designed and tested to confirm the validity and applicability of the proposed converter.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.12
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• pp.596-603
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• 2002

New layout methods for implementing MOS switches of ultra low channel resistance are presented. These area-effective layout methods include the waffle structure, zipper structure, star zag structure and fingered waffle structure. The design equations for these new layout structures are analyzed. The area-effectiveness of these structures is compared with that of the conventional alternating bar structure. MOS switches of the waffle structure were fabricated using a standard 0.25um CMOS process. The experimental characterization results of the fabricated MOS switches are presented. The analytical comparison and experimental results show that area reductions over 40% are achievable with the new structures.

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.209-212
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• 2003

This paper proposes a soft-transition control strategy for a three phase ZCS(Zero Current Switching) inverter circuit. Each phase leg of inverter circuit consists of an LC resonant tank, two main switches, and one auxiliary switches. This paper presents design consideration via a study example of a three phase prototype inverter for motor drives. A simple device tester with zero current switching capability is proposed to select eligible auxiliary switches. The principle of operation, feature and design considerations are illustrated and verified through the experiment with a 2.2kW 5kHz IGBT based experimental circuit.

• Proceedings of the KIEE Conference
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• 2006.10d
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• pp.173-176
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• 2006

This paper discusses the ZVS/ ZVZCS Three-Level converter using the minimum auxiliary circuit. A primary auxiliary circuit, which consists of one coupled inductor is added in the primary circuit to provide ZVZCS conditions to primary switches. ZVS is for outer switches and ZCS or ZVS is for inner switches. Many advantages including simple circuit topology high efficiency, and low cost make this converter attractive for high power applications. The principle of operation, feature and design considerations arc illustrated and verified through the experiment with a 2kHz 400kHz IGBT based experimental circuit.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.6
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• pp.1148-1159
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• 1997

In the broadband integrated service digital networks (B-ISDN), ATM switches hould be abld to accommodate diverse types of applications ith different traffic characteristics and quality ddo services (QOS). Thus, in order to increase the utilization of switches and satisfy the QOS's of each traffic type, some types of priority control schemes are needed in ATM switches. In this paper, a nonblocking input and output queueing ATm switch with capacity C is considered in which two classes of traffics with different loss probability constraints are admitted. 'Partial push-out' algorithm is suggested as a loss priority control schemes, and the performance of this algorithm is analyzed when this is adopted in input buffers of the switch. The quque length distribution of input buffers and loss probabilities of each traffic are obtained using a matrix-geometric solution method. Numerical analysis and simulation indicate that the utilization of the switch with partial push-out algorithm satisfying the QOS's of each traffic is much higher than that of the switch without control. Also, the required buffer size is reduced while satisfying the same QOS's.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.172-176
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• 2013

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.