Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.07c
- /
- Pages.1205-1208
- /
- 1995
Optical Transient Characteristics of Au-Compensated Silicon p-i-n Diode Switches
금이 보상된 실리콘 p-i-n 다이오드 스위치의 광 과도 특성
-
Min, Nam-Ki
(Korea University) ;
- Henderson, H.T. (University of Cincinnati)
-
민남기
(고려대학교) ;
- Published : 1995.07.20
Abstract
The optically-gated p-i-n diode switches have been fabricated with gold-compensated silicon. The turn-on and turn-off delay times and the rise and fall times were measured as a function of optical power level, bias, and pulse width. The turn-on characteristics shows a strong dependence an optical pulse power and a delay time(
Keywords