Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effective Stress Modeling of Membranes Made of Gold and Aluminum Materials Used in Radio-Frequency Microelectromechanical System Switches

  • Singh, Tejinder (Department of Electronics & Communication Engineering, Lovely Professional University)
  • Received : 2013.06.26
  • Accepted : 2013.06.30
  • Published : 2013.08.25
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Abstract

Microelectromechanical system switches are becoming more and more popular in the electronics industry; there is a need for careful selection of the materials in the design and fabrication of switches for reliability and performance issues. The membrane used for actuation to change the state of an RF switch is made mostly using gold or aluminum. Various designs of membranes have been proposed. Due to the flexure-type structures, the design complexity increases, which makes stress analysis mandatory to validate the reliability and performance of a switch. In this paper, the effective stress and actuation voltage required for different types of fixed-fixed membranes is analyzed using finite element modeling. Effective measures are presented to reduce the stress and voltage.

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References

  1. K. E. Peterson, IBM J. Res. Develop., 23, 376 (1979) [DOI: http://dx.doi.org/10.1147/RD.234.0376].
  2. C. T. Nguyen, The 11th Annual International Workshop on Micro Electro Mechanical Systems (Heidelberg) (Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA 1998 Jan 25 - 29) p. 1 [DOI: http://dx.doi.org/10.1109/MEMSYS.1998.659719].
  3. G. M. Rebeiz, RF MEMS Theory, Design and Technology (John Wiley & Sons, USA, 2003).
  4. J. B. Muldavin and G. M. Rebeiz, IEEE Trans. Microw. Theory Techn., 48, 1053 (2000) [DOI: http://dx.doi.org/10.1109/22.904744].
  5. Z. J. Yao, S. Chen, E. Eshelman, D. Denniston and C. L. Goldsmith, IEEE J. Microelectromech. Systems, 8, 129 (1999) [DOI:http://dx.doi.org/10.1109/84.767108] .
  6. S. P. Pacheco, L. P. B. Katehi and C. T. Nguyen, Microwave Symposium Digest. 2000 IEEE MTT-S International (USA) (Radiat. Lab., Michigan Univ., Ann Arbor, MI, USA 2000 Jun 11-16) p. 165 [DOI: http://dx.doi.org/10.1109/MWSYM.2000.860921].
  7. M. Ruan, J. Shen and C. B. Wheeler, Micro Electro Mechanical Systems, 2001. MEMS 2011. The 14th IEEE International Conference on (USA) (Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA 2001 Jan 21-25) p. 224 [DOI: http://dx.doi.org/10.1109/MEMSYS.2001.906519].
  8. H. C. Lee, J. H. Park, J. Y. Park, H. J. Nam and J. U. Bu, Journal of Micromechanics and Microengineering. 15, 2098 (2005) [DOI:http://dx.doi.org/10.1088/0960-1317/15/11/015].
  9. M. Daneshmand, S. Fauladi, R. R. Mansour, M. Lisi and T. Stajcer, Microwave Symposium Digest, 2009. MTT-S International (USA) (Microwave to Millimeter-wave Lab., Univ. of Alberta, Edmonton, AB, Canada 2009 Jun 07-12) p. 1217 [DOI: http://dx.doi.org/10.1109/MWSYM.2009.5165922].
  10. W. M. V. Spenger, R. Puers and I. D. Wolf, J. Adhesion Sci. Technol. 17, 563 (2003) [DOI: http://dx.doi.org/10.1163/15685610360554410].
  11. N. Khaira, T. Singh and J. Sengar, Trans. Electr. Electron. Mater. 14, 116 (2013) [DOI: http://dx.doi.org/10.4313/TEEM.2013.14.3.116].

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