• 한국광학회지
• /
• 제35권1호
• /
• pp.1-8
• /
• 2024

유리기층에 코팅되어 있는 박막의 광학상수를 정확하게 분석하기 위해, 반투명 기층 위에 다층박막이 코팅되어 있는 시료의 유사 투과타원 상수 표현과 투과율 표현을 구체적으로 제시하였다. 두꺼운 기층에서 일어나는 다중반사로 인한 빛의 세기를 결맞지 않도록 중첩하는 동시에, 반투명 기층의 광흡수 영역에서 기층의 흡수를 정확하게 반영함으로써 다층박막이 코팅된 반투명 기층 시료의 정확한 모델링 분석이 가능하게 하였다. 흡광도가 매우 낮은 파장대역에서 투과율 측정에 기반한 분석과 타원법에 기반한 모델링 분석 방법이 가지는 박막의 소광계수의 차이를 투과율의 민감도와 타원상수의 민감도 분석을 통하여 비교 분석하였다. 투과율 분석법과 반사 타원법을 SiN 박막이 코팅된 유리기층 시료에 적용함으로써 소광계수가 매우 작을 때에도 SiN 박막의 복소굴절률과 두께를 정확하게 결정할 수 있음을 보였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.88-88
• /
• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Ga (GZOB) films was investigated. GZOB films were deposited on glass substrates by DC magnetron sputtering. The thickness range of films were from 100 nm to 600 nm to identified as increasing thickness, stress between substrate and GZOB film. The average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $9.16\times10^{-4}\Omega$-cm was obtained. We presented that a GZOB film of 400 nm was optimization to obtain a high transmittance and conductivity.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.138-138
• /
• 2008

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Al (AZOB) films was investigated. AZOB films were deposited on PC substrates by DC magnetron sputtering. The thickness range of films were from 300 nm to 800 nm to identified as increasing thickness, stress between substrate and AZOB film. The. average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $1.58\times10^{-3}\Omega$-cm was obtained. We presented that a AZOB film of 500 nm was optimization to obtain a high transmittance and conductivity.

• 한국재료학회지
• /
• 제31권7호
• /
• pp.403-408
• /
• 2021

Various surface colors are predicted and implemented using the interference color generated by controlling the thickness of nano-level diamond like carbon (DLC) thin film. Samples having thicknesses of up to 385 nm and various interference colors are prepared using a single crystal silicon (100) substrate with changing processing times at low temperature by plasma-enhanced chemical vapor deposition. The thickness, surface roughness, color, phases, and anti-scratch performance under each condition are analyzed using a scanning electron microscope, colorimeter, micro-Raman device, and scratch tester. Coating with the same uniformity as the surface roughness of the substrate is possible over the entire experimental thickness range, and more than five different colors are implemented at this time. The color matched with the color predicted by the model, assuming only the reflection mode of the thin film. All the DLC thin films show constant D/G peak fraction without significant change, and have anti-scratch values of about 19 N. The results indicate the possibility that nano-level DLC thin films with various interference colors can be applied to exterior materials of actual mobile devices.

• 한국수소및신에너지학회논문집
• /
• 제6권1호
• /
• pp.17-22
• /
• 1995

Thermally evaporated Pd films on substrate were hydrogenated upto 1 bar of hydrogen gas at room temperature. Temperature dependence hange of electrical resistivity on Pd films is examined in the thickness range between $60{\AA}$ and $990{\AA}$. Resistivity of Pd is fitted well with Bloch-$Gr{\ddot{u}}neisen$ formula. Debye temperatures of Pd films are about 254 K, which are 20 K lower than that of bulk Pd. Debye temperature is not sensitive to film thickness change. Temperature of substrate during evaporation changes temperature dependence of resistivity of films much. Optical phonon contribution increases with decreasing temperature of PdHx.

• 한국세라믹학회지
• /
• 제51권4호
• /
• pp.344-349
• /
• 2014

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

• Bulletin of the Korean Chemical Society
• /
• 제33권1호
• /
• pp.83-89
• /
• 2012

Due to the potential importance and usefulness, usage of highly ordered nanoporous anodized aluminum oxide can be broadened in industry, when highly ordered anodized aluminum oxide can be placed on a substrate with controlled thickness. Here we report a facile route to highly ordered nanoporous alumina with the thickness of hundreds-of-nanometer on a silicon wafer substrate. Hexagonally or tetragonally ordered nanoporous alumina could be prepared by way of thermal imprinting, dry etching, and anodization. Adoption of reusable polymer soft molds enabled the control of the thickness of the highly ordered porous alumina. It also increased reproducibility of imprinting process and reduced the expense for mold production and pattern generation. As nanoporous alumina templates are mechanically and thermally stable, we expect that the simple and costeffective fabrication through our method would be highly applicable in electronics industry.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제10권2호
• /
• pp.100-106
• /
• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

• 한국표면공학회지
• /
• 제33권5호
• /
• pp.349-355
• /
• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2007년도 추계학술대회 논문집
• /
• pp.19-19
• /
• 2007