Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dependance of thickness on the properties of B doped ZnO:Ga (GZOB) thin film on glass substrate at room temperature

유리기판에 저온 증착한 GZOB 박막의 두께에 따른 특성 변화

  • Yu, Hyun-Kyu (School of Information and Communication Engineering, SungKyunKwan University) ;
  • Lee, Kyu-Il (School of Information and Communication Engineering, SungKyunKwan University) ;
  • Lee, Jong-Hwan (School of Information and Communication Engineering, SungKyunKwan University) ;
  • Kang, Hyun-Il (School of Information and Communication Engineering, SungKyunKwan University) ;
  • Lee, Tae-Yong (School of Information and Communication Engineering, SungKyunKwan University) ;
  • Kim, Eung-Kwon (School of Information and Communication Engineering, SungKyunKwan University) ;
  • Song, Joon-Tae (School of Information and Communication Engineering, SungKyunKwan University)
  • 유현규 (성균관대학교 정보통신공학부) ;
  • 이규일 (성균관대학교 정보통신공학부) ;
  • 이종환 (성균관대학교 정보통신공학부) ;
  • 강현일 (성균관대학교 정보통신공학부) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 김응권 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Published : 2008.11.06
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Abstract

In this study, effect of thickness on structural, electrical and optical properties of B doped ZnO:Ga (GZOB) films was investigated. GZOB films were deposited on glass substrates by DC magnetron sputtering. The thickness range of films were from 100 nm to 600 nm to identified as increasing thickness, stress between substrate and GZOB film. The average transmittance of the films was over 80 % until 500 nm. Then a resistivity of $9.16\times10^{-4}\Omega$-cm was obtained. We presented that a GZOB film of 400 nm was optimization to obtain a high transmittance and conductivity.

Keywords