Temperature Dependence Change of Electrical Resistivity on PdHx Films due to Film Thickness Change

PdHx 박막의 두께 변화에 의한 전기비저항의 온도 의존성 변화

  • Cho, Young-sin (Department of Science Education, Kangwon National University)
  • Published : 1995.06.30

Abstract

Thermally evaporated Pd films on substrate were hydrogenated upto 1 bar of hydrogen gas at room temperature. Temperature dependence hange of electrical resistivity on Pd films is examined in the thickness range between $60{\AA}$ and $990{\AA}$. Resistivity of Pd is fitted well with Bloch-$Gr{\ddot{u}}neisen$ formula. Debye temperatures of Pd films are about 254 K, which are 20 K lower than that of bulk Pd. Debye temperature is not sensitive to film thickness change. Temperature of substrate during evaporation changes temperature dependence of resistivity of films much. Optical phonon contribution increases with decreasing temperature of PdHx.

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Acknowledgement

Supported by : 한국과학재단