• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.61-66
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• 2015

Recently, the major trends of NIL are high throughput and large area patterning. For UV NIL, if it can be proceeded in the non-vacuum environment, which greatly simplifies tool construction and greatly shorten process times. However, one key issue in non-vacuum environment is air bubble formation problem. In this paper, numerical analysis of bubble defect of UV NIL is performed. Fluent, flow analysis focused program was utilized and VOF (Volume of Fluid) skill was applied. For various resist-substrate and resist-mold angles, effects of velocity inlet and residual layer thickness of resist on bubble defect formation were investigated. The numerical analyses show that the increases of velocity inlet and residual layer thickness can cause the bubble defect formation, however the decreases of velocity inlet and residual layer thickness take no difference in the bubble defect formation.

• Korean Journal of Materials Research
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• v.25 no.10
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• pp.571-576
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• 2015

The effects of coating thickness on the delamination and fracture behavior of thermal barrier coating (TBC) systems were investigated with cyclic flame thermal fatigue (FTF) and thermal shock (TS) tests. The top and bond coats of the TBCs were prepared by electron beam-physical vapor deposition and low pressure plasma spray methods, respectively, with a thickness ratio of 2:1 in the top and bond coats. The thicknesses of the top coat were 200 and $500{\mu}m$, and those of the bond coat were 100 and $250{\mu}m$. FTF tests were performed until 1140 cycles at a surface temperature of $1100^{\circ}C$ for a dwell time of 5 min. TS tests were also done until more than 50 % delamination or 1140 cycles with a dwell time of 60 min. After the FTF for 1140 cycles, the interface microstructures of each TBC exhibited a sound condition without cracking or delamination. In the TS, the TBCs of 200 and $500{\mu}m$ were fully delaminated (> 50 %) within 171 and 440 cycles, respectively. These results enabled us to control the thickness of TBC systems and to propose an efficient coating in protecting the substrate in cyclic thermal exposure environments.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.91-98
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• 2015

In order to apply to stretchable electronics packaging, locally stiffness-variant stretchable substrates consisting of island structure were fabricated by combining two polydimethylsiloxane elastomers of different stiffnesses and their elastic moduli were characterized as a function of the width of the high-stiffness island. The low-stiffness substrate matrix and the embedded high-stiffness island of the stretchable substrate were formed by using Dragon Skin 10 of the elastic modulus of 0.09 MPa and Sylgard 184 of the elastic modulus of 2.15 MPa, respectively. A stretchable substrate was fabricated to be a configuration of 6.5-cm length, 0.4-cm thickness, and 2.5-cm width, in which a high-stiffness Sylgard 184 island, of 4-cm length, 0.2-cm thickness, and 0.5~1.5-cm width, was embedded. The elastic modulus of a stretchable substrate was increased from 0.09 MPa to 0.16 MPa by incorporating the Sylgard 184 island of 0.5-cm width to Dragon Skin 10 substrate matrix. The elastic modulus was further improved to 0.18 MPa and 0.2 MPa with increasing the Sylgard 184 island width to 1.0 cm and 1.5 cm, which were in good agreement with values estimated by combining the Voigt structure of isostrain and the Reuss structure of isostress.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.45-54
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• 2020

Recently, market demands of miniaturization, high interconnection density, and fine pitch of PCBs continuously keep increasing. Therefore, SLP (substrate like PCB) technology using a modified semi additive process (MSAP) has attracted great attention. In particular, SLP technology is essential for the development of high-capacity batteries and 5G technology for smartphones. In this study, the reliability of the microvia of hybrid SLP, which is made of conventional HDI (high density interconnect) and MSAP technologies, was investigated by experimental and numerical analysis. Through thermal cycling reliability test using IST (interconnect stress test) and finite element numerical analysis, the effects of various parameters such as prepreg properties, thickness, number of layers, microvia size, and misalignment on microvia reliability were investigated for optimal design of SLP. As thermal expansion coefficient (CTE) of prepreg decreased, the reliability of microvia increased. The thinner the prepreg thickness, the higher the reliability. Increasing the size of the microvia hole and the pad will alleviate stress and improve reliability. On the other hand, as the number of prepreg layers increased, the reliability of microvia decreased. Also, the larger the misalignment, the lower the reliability. In particular, among these parameters, CTE of prepreg material has the greatest impact on the microvia reliability. The results of numerical stress analysis were in good agreement with the experimental results. As the stress of the microvia decreased, the reliability of the microvia increased. These experimental and numerical results will provide a useful guideline for design and fabrication of SLP substrate.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1573-1575
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• 2004

An alumina membrane with nano-sized pores was fabricated by anodic oxidation. The shape and structure of the pore on alumina membrane were changed according to the roughness of aluminum surface. The shape and structure of the nano-sized pre were investigated according to purity of aluminum substrate for the anodization process. The aluminum substrates with 99.5% and 99.999% purities were used. The aluminum substrate(99.5%) was anodized after the processes of pressing, mechanical polishing, chemical polishing, and electrochemical polishing. The nano-sized pores with the pore size of 50 - 100nm, the cell size of 20-50nm and the thickness of $10{\mu}m{\sim}45{\mu}m$ were obtained. Even though the electrochemical polishing was used for the aluminum substrate (99.999%), the same characteristics as the aluminum substrate (99.5%) was obtained. The alumina membrane prepared by anodization for 5 min using fixed voltage method shows the pore with irregular shape. The pore shape was changed to regular shape after pore widening process.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.481-485
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• 2001

We investigated the structural and electrical properties of the Ba ($Zr_{x}$ $T_{il-x}$ )$O_3$ (BZT thin films with a mole fraction of x=0.2 and thickness 150 nm for the application in MLCC (Multilayer Ceramic Capacitor). BZT films were prepared on $Pt/SiO_2$/Si substrate at various substrate temperatures by the RF-magnetron sputtering system. When the substrate temperature was above $500^{\circ}C$, we could obtain multi-crystalline BZT films oriented at (110), (111), and (200) directions. The crystallization of the film and high dielectric constant were observed with the increase of substrate temperature. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature. This paper reports surface morphology, dielectric constant, dissipation factor, and C-V characteristics for BZT films deposited at three different temperatures. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties but a little small dielectric constant for MLCC application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.108-109
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• 2009

In this study we investigated the characteristics of GZOB thin film on $O_2$ plasma treated Polycarbonate substrate using DC magnetron sputtering method. In our experiments results, GZOB thin film on $O_2$ plasma treated Polycarbonate substrate showed low resistivity than As-grown GZOB thin film, and visible transmission of 85% with a thickness 400 nm. Compared with As-Grown the electrical properties of GZOB were relatively improved by $O_2$ plasma treated substrate. From these results, we could confirm the suitable GZOB thin films for transparent electrode.

• Journal of the Korean institute of surface engineering
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• v.43 no.6
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• pp.272-277
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• 2010

We investigated the life time characteristics of OLED device with aluminium oxide ($AlO_x$) passivation film on glass substrate and polyethylene terephthalate (PET) substrate by RF magnetron sputtering for the transparent barrier film applied to flexible OLED device. Basic buffer layer was determined as $Alq_3$(500 nm)-LiF(300 nm)-Al(1200 nm), and the most suitable aluminium oxide ($AlO_x$) film have been formed when the partial volume ratio of oxygen was 20% and the sputtering power was 100 watt and the minimum thickness of buffer was $2\;{\mu}m$. $AlO_x$/epoxy hybrid film was also used as a effective passivation layer for the purpose of improving life time characteristics of OLED devices with the glass substrate and the plastic substrate. Besides, the simultaneous deposition of $AlO_x$/epoxy film on back side of PET could result in better improvement of life time.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.669-673
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• 2008

ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.55-56
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• 2018

In this paper, a method for analyzing the dielectric constant of a planar substrate is proposed. To this end, a band-stop filter was created by adding a H-shaped resonant aperture to the ground plane of a microstrip transmission line. A planar substrate of 2 mm thickness was placed behind the ground plane of the microstrip transmission line and the change of the resonant frequency with the change of the dielectric constant of the substrate was investigated. It can be seen that the change ratio of the frequency to the reference resonant frequency is larger than that of the conventional complementary split ring resonator structure.