• Title/Summary/Keyword: substrate layers

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An evaluation of arc sprayed layer on the erosion property (Arc Sprayed부의 Erosion 특성평가)

  • 배강열;김희진
    • Journal of Welding and Joining
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    • v.5 no.2
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    • pp.27-34
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    • 1987
  • The characteristics of arc sprayed layer were studied with hardness test and microstructural observation. The erosion resistance of arc sprayed layer was also evaluated using a method of steel ball blasting test which was proposed in this study as a test method for measuring the erosion properties in the impact wear condition. By an impact of the molten droplets on the redeposited substrate, lamella structure was formed which contains laminated oxide layers, fissures, and porosities. As a result of mechanical tests, it was shown that the sprayed specimen showed higher hardness than the substrate, but it resulted in higher erosion rate than the substrate. The poor erosion property obtained with a sprayed coating was considered to be attributable to easy flaking off the the layers laminated with brittle oxide layers.

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Molecular beam epitaxial growth and characterization of Sb .delta.-doped Si layers using substrate temperature modulation technique (저온 변조 성장 기법을 이용하여 Sb가 ${\delta}$ 도핑된 다층 구조의 Si 분자선 박막 성장과 특성 분석)

  • Le, Chan ho
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.142-148
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    • 1995
  • Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

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Improvement of PDMS graphene transfer method through surface modification of target substrate (폴리디메틸실록산(PDMS)을 이용한 그래핀 전사법 개선을 위한 계면처리 연구)

  • Han, Jae-Hyung;Choi, Mu-Han
    • Journal of the Korean Applied Science and Technology
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    • v.32 no.2
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    • pp.232-239
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    • 2015
  • In this paper, we study the dry transfer technology utilizing PDMS (Polydimethylsiloxane) stamp of a large single-layer graphene grown on Cu-foil as catalytic metal by using Chemical Vapor Deposition (CVD). By changing the surface property of the target substrate through $UV/O_3$ treatment, we can transfer the graphene on the target substrate while minimizing mechanical damages of graphene layer. Multi-layer (1~4 layers) graphene was stacked on $SiO_2/Si$ wafer successfully by repeating thetransfer method/process and then optical transmittance and sheet resistance of graphene layers have been measured as a quality assessment.

The Influence of AlN Buffer Layer Thickness on the Growth of GaN on a Si(111) Substrate with an Ultrathin Al Layer

  • Kwon, Hae-Yong;Moon, Jin-Young;Bae, Min-Kun;Yi, Sam-Nyung;Shin, Dae-Hyun
    • Journal of Advanced Marine Engineering and Technology
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    • v.32 no.3
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    • pp.461-467
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    • 2008
  • It was studied the effect of a pre-deposited ultrathin Al layer as part of a buffer layer for the growth of GaN. AlN buffer layers were deposited on a Si(111) substrate using an RF sputtering technique, followed by GaN using hydride vapor phase epitaxy (HVPE). Several atomic layers of Al were deposited prior to AlN sputtering and the samples were compared with the others grown without pre-deposition of Al. And it was also studied the influence of AlN buffer layer thickness on the growth of GaN. The peak wavelength of the photoluminescence (PL) was varied with increasing the thickness of the GaN and AlN layers. The optimum thickness of AlN on a Si(111) substrate with an ultrathin Al layer was about $260{\AA}$. Scanning electron microscope (SEM) images showed coalescent surface morphology and X-ray diffraction (XRD) showed a strongly oriented GaN(0002) peak.

Electrical Properties of the Transparent Conducting Oxide Layers of Al-doped ZnO and WO3 Prepared by rf Sputtering Process

  • Gang, Dong-Su;Kim, Hui-Seong;Lee, Bung-Ju;Sin, Baek-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.316-316
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    • 2014
  • Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.

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Epitaxial Growth of Rare-earth Ion Doped $CaF_2$ layers by MBE

  • Ko, J.N.;Chen, Y.;Fukuda, T.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.09a
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    • pp.3-7
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    • 1998
  • The rare-earth ions (R3+, R=Nd, Er) doped CaF2 layers have been grown on CaF2(111) substrate by molecular beam epitaxy. The epitaxial relationship and the crystallinity of CaF2:R3+ layers depending on the concentration of R3+ were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between CaF2:R3+ layers and CaF2(111) substrate was investigated by X-ray rocking curve analysis.

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A Study for Ni-Al based Intermetallics Coating onto Aluminum Substrate by Induction Heating (고주파 유도가열을 통한 알루미늄 기판재위 Ni-Al계 금속간화합물의 연소합성코팅에 관한 연구)

  • Lee, Han-Young
    • Tribology and Lubricants
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    • v.28 no.2
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    • pp.56-61
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    • 2012
  • In order to investigate the possibility of Ni-Al based intermetallics coating onto aluminum substrate, the coating process for induction heating has been evaluated by microscopically analyzing the intermetallic layers coated at temperatures lower than the melting temperature of aluminum. The coating layers were divided into two parts with different microstructure along the depth. Hard $NiAl_3$ layer was found at lower parts of the coatings near the interface with aluminum substrate. This layer was formed by the diffusion of aluminum atoms from the substrate into the coating layer across the interface during the induction heating. Meanwhile, at the upper parts of the coating near the surface, a large amount of un-reacted Ni was still remained and surrounded by several Ni-Al based intermetallic compounds, such as $Ni_3Al$, NiAl and $Ni_2Al_3$ formed by the lattice diffusion.

Formation of Diamond/Mo/Ni Multi-Layer on Steel Substrate (강 표면의 다이아몬드/몰리브데늄/니켈 복합층의 생성)

  • Lee, H.J.;J.I. Choe;Park, Y.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2002.05a
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    • pp.37-37
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    • 2002
  • Diamoncl/Mo/Ni multi-layers on SKH-51 steel substrate was prepared to improve the abrasive wear resistance of a tool and die by a commercial chemical vapor deposition unit and electro-plating. The diamond after 7 hour deposition had cuba-octahedral structure with 2~5$\mu\textrm{m}$ grains. The existence of non-ferrous metals such as chromium, nickel and molybdenum between diamond and SKH-51 substrate results in forming higher quality of diamond layer by retarding carbon diffusion in the diamond layer during deposition, and also improving hardness and wear resistance. Surface cracks on the film was sometimes observed by the difference of by the thermal expansion coefficients between the steel substrate and the deposited layers during cooling.

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Study on Formation of Semitransparent Cu Nanoparticle Layers for Realizing Metal Nanoparticle-Dielectric Bilayer Structures (금속나노입자-유전체 이층 구조 구현을 위한 반투명 Cu 나노입자층 형성에 관한 연구)

  • Yoon, Hye Ryeon;Jo, Yoon Ee;Yoon, Hoi Jin;Lee, Seung-Yun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.460-464
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    • 2020
  • This study reports the fabrication and application of semitransparent Cu nanoparticle layers. Spin coating and subsequent drying of a Cu colloid solution were performed to deposit Cu nanoparticle layers onto Si and glass substrates. As the spin speed of the spin coating increases, the density of the nanoparticles on the substrate decreases, and the agglomeration of nanoparticles is suppressed. This microstructural variation affects the optical properties of the nanoparticle layers. The transmittance and reflectance of the Cu nanoparticle layers increase with increasing spin speed, which results from the trade-off between the exposed substrate area and surface coverage of the Cu nanoparticles. Since the glass substrates coated with Cu nanoparticle layers are semitransparent and colored, it is anticipated that the application of a Cu nanoparticle-dielectric bilayer structure to transparent solar cells will improve the cell efficiency as well as aesthetic appearance.

Evaluation of the Corrosion Resistance of Plated Ni and Ni-Cr Layers on Fe Substrate by Using Salt Spray, CASS and EC Tests (철소지 위에 형성된 니켈 및 니켈-크롬 도금층의 염수분무, 캐스, 전해부식시험법을 이용한 내식성평가)

  • 신재호;이동훈;이재봉;신성호
    • Journal of the Korean institute of surface engineering
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    • v.36 no.4
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    • pp.307-316
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    • 2003
  • Salt spray, CASS(copper accelerated acetic salt spray) and EC(electrolytic corrosion) tests were performed in order to evaluate the corrosion resistance of plated Ni and Ni-Cr layers on Fe substrate. Compared with the conventional methods such as salt spray and CASS, the electrochemical method such as EC test may be beneficial in terms of test time span and quantitative accuracy. Furthermore, EC test can also become the alternative method to evaluate the resistance to corrosion of coatings by measuring the corrosion potentials of the coated layers in the electrolyte during the off-time of EC cycles. Compared with the corrosion potentials of pure iron, nickel, chromium, those potentials of coated layers can be used to anticipate the extent of corrosion. Results showed that in terms of the test time span, EC test gave 14 times and 21 times faster results than the salt spray test in cases of $5\mu\textrm{m}$ Ni and $20\mu\textrm{m}$ Ni plated layers, respectively. In addition, EC test also offered the shorter test time span than CASS test in cases of $5 \mu\textrm{m}$ Ni + $0.5\mu\textrm{m}$ Cr, and $20\mu\textrm{m}$ Ni + $0.5\mu\textrm{m}$ Cr on Fe substrate by 78 times and 182 times, respectively. Therefore, EC test can be regarded as the better method to evaluate the resistance to corrosion of coated layers than the conventional methods such as salt spray and CASS.