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http://dx.doi.org/10.5916/jkosme.2008.32.3.461

The Influence of AlN Buffer Layer Thickness on the Growth of GaN on a Si(111) Substrate with an Ultrathin Al Layer  

Kwon, Hae-Yong (Department of applied sdences, korea Maritime University)
Moon, Jin-Young (Department of applied sdences, korea Maritime University)
Bae, Min-Kun (Basics Science Research Institute, Pukyong National University)
Yi, Sam-Nyung (Department of Applied Science, Korea Maritime University)
Shin, Dae-Hyun (Division of Advanced Technology, Korea Research Institute of Standards and Science)
Abstract
It was studied the effect of a pre-deposited ultrathin Al layer as part of a buffer layer for the growth of GaN. AlN buffer layers were deposited on a Si(111) substrate using an RF sputtering technique, followed by GaN using hydride vapor phase epitaxy (HVPE). Several atomic layers of Al were deposited prior to AlN sputtering and the samples were compared with the others grown without pre-deposition of Al. And it was also studied the influence of AlN buffer layer thickness on the growth of GaN. The peak wavelength of the photoluminescence (PL) was varied with increasing the thickness of the GaN and AlN layers. The optimum thickness of AlN on a Si(111) substrate with an ultrathin Al layer was about $260{\AA}$. Scanning electron microscope (SEM) images showed coalescent surface morphology and X-ray diffraction (XRD) showed a strongly oriented GaN(0002) peak.
Keywords
GaN; HVPE; AlN buffer; Si substrate;
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1 L.Liu, J.H.Edgar, Materials Science and Engineering, R 37, 61 (2002).
2 N. C. Chen, C. F. Shih, C. A. Chang, A. P. Chiu, S. D. Teng and K. S. Liu, phys. stat. sol.(b), 241, 2698 (2004).   DOI   ScienceOn
3 X. Ni, L. Zhu, Z. Ye, Z. Zhao, H. Tang, W. Hong, B. Zhao, Surface & Coatings technology, 198, 350 (2005).   DOI   ScienceOn
4 Y. Lu, X. Liu, X. Wang, D. C. Lu, D. Li, X. Han, G. Cong and Z. Wang, J. Crystal Growth, 263, 4 (2004).   DOI   ScienceOn
5 P. W. Yu, C. S. Park, and S. T. Kim, J. Appl. Phys., 89, 1692 (2001).   DOI   ScienceOn
6 S. T. Kim, Y. J. Lee, S. H. Chung and D. C. Moon, J. Korean Phys. Soc., 33, 313 (1998).
7 E. C. Piquette, P. M. Bridger, Z. Z. Bandic, T. C. McGill, J.Vac.Sci.Tech. B, 17, 1241 (1999).   DOI
8 D. H. Shin, M. K. Bae, S. N. Yi, J. H. Na, A. M. Green, R. A. Taylor, Y. J. Cho, H. M. Cho and S. H. Park, J. Korean Phys. Soc., 48, 1255 (2006).
9 J. W. Lee, S. H. Jung, H. Y. Shin, I. H. Lee, C. W. Yang, S. H. Lee and J. B. Yoo, J. Crystal Growth, 237, 1094 (2002).   DOI   ScienceOn
10 T. Sasaki, J. Crystal Growth, 129, 81 (1993).   DOI   ScienceOn
11 H. Schulz and K.H.Thiemann, Solid State Commun., 23, 815 (1997).
12 H. K. Cho, J. Y. Lee, K. S. Kim and G. M. Yang, J. Korean Phys. Soc., 39, 622 (2001).
13 K. Kusaka, T. Hanabusa, K. Tominaga, Vacuum , 74, 613 (2004).   DOI   ScienceOn
14 T. Minegishi, T. Suzuki, C. Harada, H. Goto, M. W. Cho, T. Yao, Current Applied Physics, 4, 685 (2004).   DOI   ScienceOn
15 H. Ishikawa, G. Y. Zhao, N. Nakada, T. Egawa, T. Jinbo and M. Umeno, Jpn. J. Appl. Phys., 38, L492 (1999).   DOI
16 S. N. Yi, H. S. Ahn, M. Yang, K. H. Kim, H. Kim, J. Y. Yi, J. H. Chang, H. S. Kim, S. C. Lee and S. W. Kim, J. Korean Phys. Soc., 45, S598 (2004).
17 H. J. Kim, H. S. Paek, and J. B. Yoo, Surface and coatings Technology, 131, 465 (2000).   DOI   ScienceOn
18 Y. Lu, X. Liu, D. C. Lu, H. Yuan, Z. Chen, T. Fan, Y. Li, P. Han, X. Wang, D. Wang, Z. Wang, J. Crystal Growth, 236, 77 (2002).   DOI   ScienceOn
19 K. H. Kim, H. Kim, M. Yang, H. S. Ahn, S. N. Yi, N. Kameshiro, Y. Honda, M. Yamaguchi and N. Sawaki, J. Korean Phys. Soc., 42, S219 (2003).
20 B. S Zhang, M. Wu, X. M. Shen, J. Chen, J. J. Zhu, J. P. Liu, G. Feng, D. G Zhao, Y. T. Wang, and H. Yang, J. Crystal Growth, 258, 34 (2003).   DOI   ScienceOn
21 K. H. Lee, J. H. Na, R. A. Taylor, S. N. Yi, S. Birner, Y. S. Park, C. M. Park and T. W. Kang, Appl. Phys. Lett., 89, 023103 (2006).   DOI   ScienceOn
22 S. S. Lee, I. S. Seo, K. J. Kim and C. R. Lee, J. Korean Phys. Soc., 45, 1356 (2004).