• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.63-67
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• 2016

Divalent europium-activated $Ca_2PO_4Cl$ phosphor powders were prepared by a chemical synthetic method followed by heat treatment in reduced atmosphere, and the crystal structures, morphologies and photoluminescence properties of the powders were investigated by x-ray powder diffraction, scanning electron microscope and spectrometer. The effect of Ca/P mole ratio at the starting materials on the final products was evaluated. The optimized synthesis condition obtained in this study was Ca/P mole ratio of 2.0. The present phosphor materials had higher photoluminescence intensity and better color purity than the commercial blue phosphor powders, $(Ca,Ba,Sr)_{10}(PO_4)_6Cl_2:Eu^{2+}$. The result of excitation spectrum measurement indicated that the excitation efficiency of the synthesized powders was higher for the long-wavelength UV region than that of the commercial phosphor. It was thus concluded that the samples prepared in this study can be successfully applied for the light-emitting devices such as LED excited with long-wavelength UV light sources.

• ETRI Journal
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• v.43 no.5
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• pp.799-811
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• 2021

This paper considers a challenging problem: to simultaneously optimize the cost and the quality of service in opaque wavelength division multiplexing (WDM) networks. An optimization problem is proposed that takes the information including network topology, traffic between end nodes, and the target level of congestion at each link/ node in WDM networks. The outputs of this problem include routing, link channel capacities, and the optimum number of switch ports locally added/dropped at all switch nodes. The total network cost is reduced to maintain a minimum congestion level on all links, which provides an efficient trade-off solution for the network design problem. The optimal information is utilized for dynamic traffic in WDM networks, which is shown to achieve the desired performance with the guaranteed quality of service in different networks. It was found that for an average link blocking probability equal to 0.015, the proposed model achieves a net channel gain in terms of wavelength channels (𝛾_w) equal to 35.72 %, 39.09 %, and 36.93 % compared to shortest path first routing and 𝛾_w equal to 29.41 %, 37.35 %, and 27.47 % compared to alternate routing in three different networks.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.5
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• pp.31-37
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• 2020

In this paper, we propose a novel sub-wavelength unit cell metamaterial absorber using multi-layer structure. The proposed absorber consists of 4 layers, and each layer has a spiral resonator connected by a via hole. This structure increases inductance of the unit cell, and therefore the resonant frequency can shift to lower frequency. We optimized the proposed absorber, and the electrical size of the unit cell is dramatically reduced to 0.013 times of the wavelength. The performance of the proposed absorber is demonstrated with full-wave simulation and measurement results. An absorption rate exceeding 97% is achieved at 1.74GHz. In addition, the proposed absorber attains a high absorption rate of 90% for different polarization and incident angles.

• Current Optics and Photonics
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• v.2 no.6
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• pp.582-588
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• 2018

A $Nd:YVO_4$ laser dual-end-pumped by a wavelength-locked 878.6 nm laser diode is presented. At the repetition rate of 500 KHz, the absorbed pump power of 58 W, an output power of 26.1 W at 1064 nm is obtained, corresponding to an optical-optical efficiency of 45%. The pulse width is 44.2 ns. Meanwhile, the effects of traditional 808 nm pumping and 878.6 nm dual-end-pumping on the output laser beam quality and pulse width are compared and analyzed in an experiment.

• Current Applied Physics
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• v.18 no.11
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• pp.1381-1387
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• 2018

One dimensional (1D) grating has been fabricated (using focused ion beam) on 50 nm gold (Au) film deposited on higher refractive index Gallium phosphate (GaP) substrate. The sub-wavelength periodic metal nano structuring enable to couple photon to couple with the surface plasmons (SPs) excited by them. These grating devices provide the efficient control on the SPs which propagate on the interface of noble metal and dielectric whose frequency is dependent on the bulk electron plasma frequency of the metal. For a fixed periodicity (${\Lambda}=700 nm$) and slit width (w = 100 nm) in the grating device, the efficiency of SPP excitation is about 40% compared to the transmission in the near-field. Efficient coupling of SPs with photon in dielectric provide field localisation on sub-wavelength scale which is needed in Heat Assisted Magnetic recording (HAMR) systems. The GaP is also used to emulate Vertical Cavity Surface emitting laser (VCSEL) in order to provide cheaper alternative of light source being used in HAMR technology. In order to understand the underlying physics, far-and near-field results has been compared with the modelling results which are obtained using COMSOL RF module. Apart from this, grating devices of smaller periodicity (${\Lambda}=280nm$) and slit width (w = 22 nm) has been fabricated on GaP substrate which is photoluminescence material to observe amplified spontaneous emission of the SPs at wavelength of 805 nm when the grating device was excited with 532 nm laser light. This observation is unique and can have direct application in light emitting diodes (LEDs).

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.477-481
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• 2008

$Eu^{2+}$ and $Dy^{3+}$ co-doped strontium aluminate, $SrAl_2O_4$ long phosphorescent phoshor was fabricated and its photoluminescence was characterized. The phosphor, $SrAl_2O_4:Eu^{2+},Dy^{3+}$ was synthesized by a coprecipitation in which metal salts of $Sr(NO_3)_2$, $Al(NO_3)_3{\cdot}9H_2O$, were dissolved in $(NH_4)_2CO_3$ solution with adding $Eu(NO_3)_3{\cdot}5H_2O$ and $Dy(NO_3)_3{\cdot}5H_2O$ as a activator and co-activator, respectively. The coprecipitated products were separated from solution, washed, and dried in a vacuum dry oven. The dried powders were then mixed with 3 wt% $B_2O_3$ as a flux and heated at $800{\sim}1400^{\circ}C$ for 3 h under the reducing ambient atmosphere of 95%Ar+$5%H_2$ gases. For the synthesized $SrAl_2O_4:Eu^{2+},Dy^{3+}$, properties of photoluminescence such as emission, excitation and decay time were examined. The emission intensity increased as the annealing temperature increased and showed a maximum peak intensity at 510 nm with a broad band from $400{\sim}650\;nm$. Monitored at 520 nm, the excitation spectrum showed a maximum peak intensity at $315{\sim}320\;nm$ wavelength with a broad band from $200{\sim}500\;nm$ wavelength. The decay time of $SrAl_2O_4:Eu^{2+},Dy^{3+}$ increased as the annealing temperature increased.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.709-714
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• 2003

Eu doped $Y_2$ $O_3$ nanoparticles were prepared with the solvothermal synthesis using the ethyleneglycol solvent at 20$0^{\circ}C$ for 3-5 h and then annealed in air at 1000-140$0^{\circ}C$ for 2-4 h. The X-ray diffraction pattern of annealed crystals at 100$0^{\circ}C$ for 2 h could be indexed as pure cubic cell of $Y_2$ $O_3$ phase with lattice parameters a=10.5856 $\AA$ which is very close to the reported data (JCPDS Card File, 41-1105 a=10.6041 $\AA$). Average size of prepared phosphor particles have about 100 nm, which were spherical morphology. The phosphor particle sizes decreased and the emission intensity increased at the annealing temperature. Though PL spectrum analysis, the 3% Eu doped $Y_{2-x}$ $O_3$:E $u_{x}$ $^{3+}$(x=0.06) phosphor showed the excitation spectrum at 250 nm wavelength and the maximum emission spectrum at 611 nm wavelength.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.432-438
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• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.

• Korean Journal of Materials Research
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• v.23 no.5
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• pp.260-265
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• 2013

Silicon nanoparticle is a promising material for electronic devices, photovoltaics, and biological applications. Here, we synthesize silicon nanoparticles via $CO_2$ laser pyrolysis and study the hydrogen flow effects on the characteristics of silicon nanoparticles using high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and UV-Vis-NIR spectrophotometry. In $CO_2$ laser pyrolysis, used to synthesize the silicon nanoparticles, the wavelength of the $CO_2$ laser matches the absorption cross section of silane. Silane absorbs the $CO_2$ laser energy at a wavelength of $10.6{\mu}m$. Therefore, the laser excites silane, dissociating it to Si radical. Finally, nucleation and growth of the Si radicals generates various silicon nanoparticle. In addition, researchers can introduce hydrogen gas into silane to control the characteristics of silicon nanoparticles. Changing the hydrogen flow rate affects the nanoparticle size and crystallinity of silicon nanoparticles. Specifically, a high hydrogen flow rate produces small silicon nanoparticles and induces low crystallinity. We attribute these characteristics to the low density of the Si precursor, high hydrogen passivation probability on the surface of the silicon nanoparticles, and low reaction temperature during the synthesis.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.6
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• pp.789-793
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• 2018

All transparent metal oxide photoelectric device based on $V_2O_5$ was fabricated with structure of $V_2O_5/ZnO/ITO$ by magnetron sputtering system. $V_2O_5$ was deposited by reactive sputtering system with 4 inch vanadium target (purity 99.99%). In order to achieve p-n junction, p-type $V_2O_5$ was deposited onto the n-type ZnO layer. The ITO (indium tin oxide) was applied as the electron transporting layer for effective collection of the photo-induced electrons. Electrical and optical properties were analyzed. The Mott-Schottky analysis was applied to investigate the energy band diagram through the metal oxide layers. The $V_2O_5/ZnO/ITO$ photoelectric device has a rectifying ratio of 99.25 and photoresponse ratios of 1.6, 4.88 and 2.68 under different wavelength light illumination of 455 nm, 560 nm and 740 nm. Superior optical properties were realized with the high transmittance of average 70 % for visible light range. Transparent $V_2O_5$ layer absorbs the short wavelength light efficiently while passing the visible light. This research may provide a route for all-transparent photoelectric devices based on the adoption of the emerging p-type $V_2O_5$ metal oxide layer.