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http://dx.doi.org/10.3740/MRSK.2011.21.8.432

Annealing and In Interlayer Effects on the Photovoltaic Properties of CBD-In2S3/CIGS Solar Cells  

Kim, Hee-Seop (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Kim, Ji-Hye (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Shin, Dong-Hyeop (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Publication Information
Korean Journal of Materials Research / v.21, no.8, 2011 , pp. 432-438 More about this Journal
Abstract
In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.
Keywords
CIGS Solar Cell; CBD; $In_2S_3$; Annealing; In interlayer;
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