• 제목/요약/키워드: sub-grain

검색결과 937건 처리시간 0.023초

소결온도와 Sb/Bi 비가 ZnO-Bi2O3-Sb2O3-Co3O4 바리스터의 미세구조와 입계 특성에 미치는 영향 (Effect of Sintering Temperature and Sb/Bi Ratio on Microstructure and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Co3O4 Varistor)

  • 홍연우;신효순;여동훈;김진호
    • 한국전기전자재료학회논문지
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    • 제24권12호
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    • pp.969-976
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    • 2011
  • In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

Cr2O3를 첨가한 ZnO의 소결과 전기적 특성 (Sintering and Electrical Properties of Cr2O3-doped ZnO)

  • 홍연우;신효순;여동훈;김진호
    • 한국전기전자재료학회논문지
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    • 제23권11호
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    • pp.875-879
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    • 2010
  • In this study, we have characterized the roles of $Cr_2O_3$ on the sintering and electrical properties of ZnO. The densification and grain growth of Cr-doped ZnO (ZCr) system was mainly influenced by Cr contents. In the beginning of sintering, the densification of ZnO was retarded as reducing the Zni concentration in ZnO lattice with Cr doping. And the densification and grain growth of ZnO was more retarded due to a formation of spinel phase with increasing the Cr contents. ZCr system revealed varistor behavior with nonlinear coefficient $\alpha$ of 3~23 depending on the sintering temperature, implying double Schottky barrier formation on the grain boundary of ZnO. Especially the best varistor characteristics should be developed with 0.1~0.5 at% Cr contents and under $1100^{\circ}C$ in ZCr systems.

Preparation of Textured Bi0.5(Na,K)0.5TiO3-BiFeO3 Solid Solutions by Reactive-Templated Grain Growth Process

  • Kato, Kyoko;Kimura, Toshio
    • 한국세라믹학회지
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    • 제43권11호
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    • pp.693-699
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    • 2006
  • Textured $Bi_{0.5}(Na,K)_{0.5}TiO_3-BiFeO_3$ ceramics were prepared by the reactive-templated grain growth process, using platelike $Bi_4Ti_3O_{12}$ particles. The effects of chemical composition in $Bi_{0.5}(Na,K)_{0.5}TiO_3$ on texture development and densification were examined. Textured ceramics were obtained by using $Bi_{0.5}K_{0.5}TiO_3$ as an end member of the solid solution but densification was limited. Dense ceramics were obtained by using $Bi_{0.5}Na_{0.5}TiO_3$ but texture did not develop. Dense, textured ceramics were obtained by using $Bi_{0.5}(Na_{0.5}K_{0.5})_{0.5}TiO_3$.

맥주맥 F1세대의 양적형질에 대한 유전분석 (Genetic Analyses on Quantitative Characters of F1 Generation in Malting Barley)

  • 정원복;오주성;황필성
    • 생명과학회지
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    • 제13권1호
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    • pp.29-33
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    • 2003
  • 맥주보리의 양적형질에 대한 유전정보를 얻고자 7개 품종으로 이면교배하여 $F_1$ 세대에 대한 유전자의 분포상태 분산성분.유전력 등을 분석한 결과를 요약하면 다음과 같다. 공시된 품종집단에 대한 $F_1$ 세대의 우성정도를 Vr-Wr graph상에서 볼 때 간장.수장.망장.곡립장.1수립수 등은 초우성으로 유전되었고 경직경.곡립폭 1000립중은 불완전우성으로 유전되었다. 각 형질에 대한 분산분석 결과에서 상가적효과, 우성효과, 모본효과, 정역간의 효과는 간장.수장.망장.경직경.곡립장.곡립폭.1수립수.1000립중 등에서 모두 유의하였다. 유전 분산성분에서 간장.수장.망장.경직경.곡립장.곡립폭.1수립수.1000립중은 우성효과가 상가효과보다 컸다. 협의의 유전력은 수장이 40.06%로서 높았다.

RF 마그네트론 스퍼터링 방법으로 SiO2/Si(100) 기판위에 성장시킨 ZnO 박막의 구조 및 광특성 (Structural and Optical Properties of ZnO Thin Films Grown on SiO2/Si(100) Substrates by RF Magnetron Sputtering)

  • 한석규;홍순구;김효진;이재욱;이정용
    • 한국재료학회지
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    • 제16권6호
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    • pp.360-366
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    • 2006
  • A series of ZnO thin films were grown by radio-frequency (RF) magnetron sputtering with various RF powers on $SiO_2/Si$(100) substrates at $500^{\circ}C$. Thicknesses of the investigated ZnO films were fixed to about 250nm by changing the growth time based on the changes of growth rates with RF powers. All the ZnO thin films were grown with <0001> preferred orientation. Average grain sizes of about 250nm-thick ZnO films evaluated by FE-SEM, AFM, and TEM were increased by decreasing the RF power. Structural properties addressed by FWHM values of XRD (0002) omega rocking curves and their intensities were better for the smaller grain sized ZnO films grown with high RF powers, which implies small values of tilt for smaller grain sized ZnO films. However, optical properties addressed by intensities of band edge emissions from room temperature and low temperature photoluminescence were better for the larger grain sized ZnO films with low RF power, which implies grain boundaries acted as nonradiation recombination centers.

(Ba,Sr)TiO3계 세라믹스의 PTCR 특성에 미치는 Sb2O3의 영향 (Effects of Sb2O3 on the PTCR Properties of (Ba,Sr)TiO3-based Ceramics)

  • 이호원;김영민;어순철;김일호
    • 한국재료학회지
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    • 제14권2호
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    • pp.115-120
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    • 2004
  • Perovskite barium-strontium titanate, $(Ba, Sr)TiO_3$ was prepared and effects of $Sb_2$O$_3$ additives on its PTCR properties were investigated. $The (Ba,Sr)TiO_3$ with 0.05~0.25 mol% $Sb_2$$O_3$ showed semiconducting PTCR behavior and anomalous grain growth was also observed when it was sintered above $1330^{\circ}C$. It was considered that charge compensation by doping 8b203 as well as abnormal grain growth by sintering lead to resistivity reduction from insulating to semiconducting transition.

Apparent metabolizable energy, growth performance and carcass traits of Japanese quail fed select modern grain sorghum varieties

  • Moritz, A.H.;Krombeen, S.K.;Presgraves, J.;Blair, M.E.;Buresh, R.E.;Bridges, W.C.;Arguelles-Ramos, M.;Wilmoth, T.A.
    • Animal Bioscience
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    • 제35권12호
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    • pp.1911-1920
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    • 2022
  • Objective: This study was performed to determine the apparent metabolizable energy (AMEn) content of tannin-free red/bronze, white/tan and U.S. No. 2 varieties of grain sorghum for feeding Japanese quail and validate their nutrient profile by evaluating effects on performance and carcass traits with full-substitution of corn. Methods: Experiment 1 determined the AMEn content of red/bronze, white/tan, and U.S. No. 2 grain sorghum varieties fed to mixed-sex Japanese quail (Coturnix japonica) (n = 314) at 3 and 6-weeks of age. Analyses were based on a 2×4 factorial treatment design with age and grain types defining the treatments, and a randomized complete block experiment design with cage and trials defining the block. AMEn values were validated by evaluating the performance and carcass traits of Japanese quail (n = 644) from 1 to 40 days of age in Experiment 2 with birds were fed 1 of 4 complete diets. Statistical analyses were conducted on performance data and select individual carcass trait measurements. Results: Determined AMEn values at 3-weeks of age were 3,524±122.03 (red/bronze), 3,252±122.03 (white/tan), and 3,039±123.44 (U.S. No. 2) kcal/kg. At 6-weeks of age, determined AMEn were 3,373±297.35 (red/bronze), 3,279±297.35 (white/tan), and 2,966±298.64 (U.S. No. 2) kcal/kg. Carcass traits showed live body weight (p = 0.0409) and hot carcass weight (p = 0.0234) were greatest in U.S. No. 2; however, carcass yield (p<0.0001) was lowest. No significant differences were observed among treatments for feed intake, feed conversion ratio, breast weight and breast yield (p>0.05). Conclusion: These studies demonstrated that tannin-free grain sorghum varieties may be a potential alternative to corn in quail diets while maintaining growth performance and carcass parameters.

Polycarbosilane 첨가에 의한 TiB2의 소결 (Sintering of TiB2 with Polycarbosilane)

  • 이광정;강신혁;김득중
    • 한국세라믹학회지
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    • 제42권8호
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    • pp.588-592
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    • 2005
  • The effect of SiC additive on the densification behavior and microstructural change of $TiB_2$ ceramics was investigated. The infiltration and direct mixing with polycarbosilane (PCS), which was converted to SiC by pyrolysis during sintering, were used for the addition of SiC. The addition of Fe enhanced the densification of $TiB_2$, but which resulted in exaggerated grain growth. However, the addition of PCS enhanced the densification and suppressed the exaggerated grain growth of $TiB_2$. Moreover, the addition of PCS using direct mixing was more effective for suppress of grain growth as compare to the addition of PCS using infiltration.

Controllable Growth of Single Layer MoS2 and Resistance Switching Effect in Polymer/MoS2 Structure

  • Park, Sung Jae;Chu, Dongil;Kim, Eun Kyu
    • Applied Science and Convergence Technology
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    • 제26권5호
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    • pp.129-132
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    • 2017
  • We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

하이드라진 용액법으로 형성된 CuInSe2 다층 박막 분석 (Characterization of Hydrazine Solution Processed Multi-layered CuInSe2 Thin Films)

  • 정중희
    • 한국표면공학회지
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    • 제48권4호
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    • pp.169-173
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    • 2015
  • $CuInSe_2$ thin films which have been widely used for thin solar cells as a light absorber were prepared by hydrazine solution processing, and their microstructural properties were investigated. Hydrazine $CuInSe_2$ precursor solutions were prepared by dissolving $Cu_2S$, S, $In_2Se_3$ and Se powder in hydrazine solvent. Multilayer $CuInSe_2$ chalcopyrite phase thin films were prepared by repeating spin-coating process using the precursor solution. Unfortunately, the presence of the interfaces between each $CuInSe_2$ layer formed by multi-layer coating impeded grain growth across the interface. Here, by doing simple interface engineering to solve the limited grain growth issue, the large grained (${\sim}1{\mu}m$) $CuInSe_2$ thin films were obtained.