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http://dx.doi.org/10.3740/MRSK.2006.16.6.360

Structural and Optical Properties of ZnO Thin Films Grown on SiO2/Si(100) Substrates by RF Magnetron Sputtering  

Han Seok Kyu (Department of Materials Science and Engineering, Chungnam National University)
Hong Soon-Ku (Department of Materials Science and Engineering, Chungnam National University)
Kim Hyo-Jin (Department of Materials Science and Engineering, Chungnam National University)
Lee Jae-Wook (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Lee Jeong-Yong (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
Publication Information
Korean Journal of Materials Research / v.16, no.6, 2006 , pp. 360-366 More about this Journal
Abstract
A series of ZnO thin films were grown by radio-frequency (RF) magnetron sputtering with various RF powers on $SiO_2/Si$(100) substrates at $500^{\circ}C$. Thicknesses of the investigated ZnO films were fixed to about 250nm by changing the growth time based on the changes of growth rates with RF powers. All the ZnO thin films were grown with <0001> preferred orientation. Average grain sizes of about 250nm-thick ZnO films evaluated by FE-SEM, AFM, and TEM were increased by decreasing the RF power. Structural properties addressed by FWHM values of XRD (0002) omega rocking curves and their intensities were better for the smaller grain sized ZnO films grown with high RF powers, which implies small values of tilt for smaller grain sized ZnO films. However, optical properties addressed by intensities of band edge emissions from room temperature and low temperature photoluminescence were better for the larger grain sized ZnO films with low RF power, which implies grain boundaries acted as nonradiation recombination centers.
Keywords
ZnO; RF magnetron sputtering; PL; TEM; grain size; grain boundary; nonradiation recombination;
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