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http://dx.doi.org/10.4313/JKEM.2010.23.11.875

Sintering and Electrical Properties of Cr2O3-doped ZnO  

Hong, Youn-Woo (Bio-IT Convergence Center, Korea Institute of Ceramic Engineering and Technology)
Shin, Hyo-Soon (Bio-IT Convergence Center, Korea Institute of Ceramic Engineering and Technology)
Yeo, Dong-Hun (Bio-IT Convergence Center, Korea Institute of Ceramic Engineering and Technology)
Kim, Jin-Ho (School of Materials Science and Engineering, Kyungpook National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.11, 2010 , pp. 875-879 More about this Journal
Abstract
In this study, we have characterized the roles of $Cr_2O_3$ on the sintering and electrical properties of ZnO. The densification and grain growth of Cr-doped ZnO (ZCr) system was mainly influenced by Cr contents. In the beginning of sintering, the densification of ZnO was retarded as reducing the Zni concentration in ZnO lattice with Cr doping. And the densification and grain growth of ZnO was more retarded due to a formation of spinel phase with increasing the Cr contents. ZCr system revealed varistor behavior with nonlinear coefficient $\alpha$ of 3~23 depending on the sintering temperature, implying double Schottky barrier formation on the grain boundary of ZnO. Especially the best varistor characteristics should be developed with 0.1~0.5 at% Cr contents and under $1100^{\circ}C$ in ZCr systems.
Keywords
ZnO; $Cr_2O_3$; Sintering; Electrical properties; Varistor behavior;
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Times Cited By KSCI : 2  (Citation Analysis)
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