• 한국정보통신학회논문지
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• 제19권1호
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• pp.163-168
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• 2015

본 연구에서는 10 nm이하 채널길이를 갖는 비대칭 이중게이트 MOSFET의 하단 게이트 전압에 대한 터널링 전류(tunneling current)의 변화에 대하여 분석하고자한다. 단채널 효과를 감소시키기 위하여 개발된 다중게이트 MOSFET중에 비대칭 이중게이트 MOSFET는 채널전류를 제어할 수 있는 요소가 대칭형의 경우보다 증가하는 장점을 지니고 있다. 그러나 10nm 이하 채널길이를 갖는 비대칭 이중게이트 MOSFET의 경우, 터널링 전류에 의한 차단전류의 증가는 필연적이다. 본 연구에서는 차단전류 중에 터널링 전류의 비율을 계산함으로써 단채널에서 발생하는 터널링 전류의 영향을 관찰하고자 한다. 포아송방정식을 이용하여 구한 해석학적 전위분포와 WKB(Wentzel-Kramers-Brillouin) 근사를 이용하여 터널링 전류를 구하였다. 결과적으로 10 nm이하의 채널길이를 갖는 비대칭 이중게이트 MOSFET에서는 하단 게이트 전압에 의하여 터널링 전류가 크게 변화하는 것을 알 수 있었다. 특히 채널길이, 상하단 산화막 두께 그리고 채널두께 등에 따라 매우 큰 변화를 보이고 있었다.

• Journal of Advanced Marine Engineering and Technology
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• 제35권6호
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• pp.773-778
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• 2011

선박용 소각기는 각종 폐기물의 연소로 인한 해양환경 오염 우려로 국제해사기구에 의한 기준이 점점 강화되어지고 있다. 본 연구는 배기가스의 온도를 낮추고 연소실의 연소가스가 원활하게 배출되도록 배기가스의 배출 유로를 3개로 하고, 배기통로 내에 보조 이젝터를 설치한 시스템의 성능 향상에 대하여 Ansys를 사용하여 유동 해석을 수행하였다. 해석결과, 배기가스 유로의 다채널화에 의하여 배기가스 온도가 국제해사기구 기준보다 낮게 유지되었으며, 통로에 설치한 보조 이젝터가 배기가스 배출에 매우 효과적인 장치인 것으로 분석되었다.

• 조명전기설비학회논문지
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• 제20권1호
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• pp.85-90
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• 2006

본 논문은 불평등 전계의 $SF_6/CO_2$혼합기체 중에서 전구방전특성에 대한 실험결과를 제시한다. 임펄스 전구방전 진전을 코로나 전류와 방전광 이미지의 측정으로 조사하였다. 정 부극성의 전구방전 진전메커니즘은 기본적으로 같았으며, 초기스트리머코로나는 침전극의 끝단에서 발단되어 계단상으로 진전하는 리더에 의해 시험갭을 교락시킨다. 정극성에서 리더펄스의 휴지시간은 부극성에서보다 매우 짧았다. 또한 부극성에서 초기스트리머코로나와 절연파괴사이의 시간간격은 정극성에서보다 매우 길게 나타났다. 정극성에서 방전채널경로는 임의적으로 나타났으며, 부극성에서 리더 채널은 정극성에서 보다 굵고 밝게 나타났다.

• 생약학회지
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• 제51권1호
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• pp.41-48
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• 2020

This study was conducted to evaluate the effects of Padina arborescens and 1-O-myristoyl-2-O-oleoyl-3-O-(α-D-glucopyranosyl)-glycerol(MOGG), its active component, on the prevention of hair loss. The P. arborescens extract and MOGG inhibited the activity of 5α-reductase, which converts testosterone to dihydrotestosterone(DHT), a main cause of androgenetic alopecia. When immortalized rat vibrissa dermal papilla cells were treated with MOGG, the proliferation of dermal papilla cells significantly increased. In addition, we found that the P. arborescens extract and MOGG could open the K_ATP channel, which may contribute to increase hair growth. Furthermore, MOGG promoted PGE₂ production in HaCaT cells. The results suggest that MOGG from the P. arborescens extract has the potential to treat alopecia via 5α-reductase inhibition, the proliferation of dermal papilla, the opening of the K_ATP channel and/or increase of PGE₂ production.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• Molecules and Cells
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• 제44권10호
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• pp.758-769
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• 2021

Calcium homeostasis modulator 1 (CALHM1) is a membrane protein with four transmembrane helices that form an octameric ion channel with voltage-dependent activation. There are four conserved cysteine (Cys) residues in the extracellular domain that form two intramolecular disulfide bonds. We investigated the roles of C42-C127 and C44-C161 in human CALHM1 channel biogenesis and the ionic current (I_CALHM1). Replacing Cys with Ser or Ala abolished the membrane trafficking as well as I_CALHM1. Immunoblotting analysis revealed dithiothreitol-sensitive multimeric CALHM1, which was markedly reduced in C44S and C161S, but preserved in C42S and C127S. The mixed expression of C42S and wild-type did not show a dominant-negative effect. While the heteromeric assembly of CALHM1 and CALHM3 formed active ion channels, the co-expression of C42S and CALHM3 did not produce functional channels. Despite the critical structural role of the extracellular cysteine residues, a treatment with the membrane-impermeable reducing agent tris(2-carboxyethyl) phosphine (TCEP, 2 mM) did not affect I_CALHM1 for up to 30 min. Interestingly, incubation with TCEP (2 mM) for 2-6 h reduced both I_CALHM1 and the surface expression of CALHM1 in a time-dependent manner. We propose that the intramolecular disulfide bonds are essential for folding, oligomerization, trafficking and maintenance of CALHM1 in the plasma membrane, but dispensable for the voltage-dependent activation once expressed on the plasma membrane.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1105-1108
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• 2003

In this paper, we have fabricated the hydrogenated n-channel polysilicon thin film transistor (TFT) with LDD structure and have analyzed the hot carrier degradation characteristics by electrical stress. We have compared the threshold voltage (Vth), sub-threshold slope (S), and trans-conductance (Gm) for devices with LDD (Lightly Doped Drain) structure and non-LDD at same active sizes. We have analyzed the hot carrier effects by the hydrogenation in devices. As a analyzed results, the threshold voltage, sub-threshold slope for n-channel poly-si TFT were increased, trans-conductance was decreased. The effects of hydrogenation in n-channel poly-si TFT with LDD structure were shown the lower variations of characteristics than devices of the non-LDD structure with nomal process.

• 전자공학회논문지C
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• 제34C권2호
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• pp.19-28
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• 1997

This paper presents the design of an SSIC chip for synchronization between main and sub pictures in the multi channel TV system (MUCTS). This chip can resolve problems in MUCTS, such as passing through and vertical jolt phenomena. In addition, this chip rpvivides compatibility for normal/doulble scan, interlace/progressive and normal (4:3)/wide (16:9) systems and has high hjorizontal and vertical resolutions (340) dots and 150 lines). In each mode there are 1 channel, 3 channel, and 4 position display functions. This MUCTS chip including three A/D coverters, a D/A converter and seven line memories was fabricated with one chip by using the $0.8\mu\textrm{m}$ CMOS technology. The application areas of this MUCTS ASIC chip include the wide TV, projection TV and te next generation TV for the DBS (direct broadcast system).

• 한국전기전자재료학회논문지
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• 제33권5호
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• pp.427-431
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• 2020

In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga₂O₃) thin films grown by mist-CVD. A 500~800 nm-thick Ga₂O₃ film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga₂O₃ layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (I_D) exceeded 1 mA at a drain voltage (V_D) of 20 V. Electron mobility of the β-Ga₂O₃ channel was determined from maximum transconductance (g_m), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga₂O₃ thin films.

• 센서학회지
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• 제29권4호
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.