• Journal of Information Display
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• v.12 no.1
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• pp.47-50
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• 2011

Highly stable amorphous indium.gallium.zinc-oxide (a-IGZO) thin-film transistors (TFTs) were fabricated with an etchstopper and via-hole structure. The TFTs exhibited 40 $cm^2$/V s field-effect mobility and a 0.21 V/dec gate voltage swing. Gate-bias stress induced a negligible threshold voltage shift (${\Delta}V_{th}$) at room temperature. The excellent stability is attribute to the via-hole and etch-stopper structure, in which, the source/drain metal contacts the active a-IGZO layer through two via holes (one on each side), resulting in minimized damage to the a-IGZO layer during the plasma etching of the source/drain metal. The comparison of the effects of the DC and AC stress on the performance of the TFTs at $60^{\circ}C$ showed that there was a smaller ${\Delta}V_{th}$ in the AC stress compared with the DC stress for the same effective stress time, indicating that the trappin of the carriers at the active layer-gate insulator interface was the dominant degradation mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.792-796
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• 2014

In this paper, we investigated the hot carrier reliability of two kinds of device with low threshold voltage (LVT) and regular threshold voltage (RVT) in 65 nm CMOS technology. Contrary to the previous report that devices beyond $0.18{\mu}m$ CMOS technology is dominated by channel hot carrier(CHC) stress rather than drain avalanche hot carrier(DAHC) stress, both of LVT and RVT devices showed that their degradation is dominated by DAHC stress. It is also shown that in case of LVT devices, contribution of interface trap generation to the device degradation is greater under DAHC stress than CHC stress, while there is little difference for RVT devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.234-234
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• 2009

This paper illustrates the use of electric field computation to optimize the design of high voltage composite bushing. In the bushing, a high electric stress occurred between field shaper and central conductor by the closely space. Also coaxial cylindrical shield has a great height along the axis to control an electric field. Consequently, all the potentials are raised axially along the field shaper and electric stress is concentrated on a part of the surface of the FRP tube near the upper end of the field shaper. Maxwell 2D simulator based on the boundary element method was also introduced in order to verify the reliability of the polymer bushing. The optimized design uses internal elements for electric stress grading at critical parts of the bushing.

• Journal of Power Electronics
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• v.7 no.4
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• pp.301-309
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• 2007

The flyback converter is one of the most attractive isolated converters in small power applications because of its simple structure. However, it suffers from high device stress, large transformer size, and high voltage stress across its switch and diode. To solve these problems a new cost-effective PWM single-switch isolated converter is proposed. The proposed converter has no output filter inductor, reduced voltage stress on the secondary devices, and reduced transformer size. Moreover, the switch turn-off loss is reduced and no dissipative snubber across the secondary diode is required. Therefore, it features a simple structure, a low cost, and high efficiency. The operational principle and characteristics of the proposed converter are presented and compared with the flyback converter and then verified experimentally.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.35-35
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• 2010

This paper illustrates the use of electric field computation to optimize the design of high voltage composite bushing. In the bushing, a high electric stress occurred between field shaper and central conductor by the closely space. Also coaxial cylindrical shield has a great height along the axis to control an electric field. Consequently, all the potentials are raised axially along the field shaper and electric stress is concentrated on a part of the surface of the FRP tube near the upper end of the field shaper. Maxwell 2D simulator based on the boundary element method was also introduced in order to verify the reliability of the polymer bushing. The optimized design uses internal elements for electric stress grading at critical parts of the bushing.

• Journal of Industrial Technology
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• v.12
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• pp.25-36
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• 1992

In this paper, we simulate and calculate the stress and output voltage of the beam structure load cells by using FEM as varing physical structure parameters and loading positions. It is proved that stress enhance as the increase of the notch pitch and radius of the load cell, but decrease as the increase of the notch thickness and beam width. The results are good matched for basic formulas of the single fixed beam, and are verified our simulation is correct. Also, it is found that the stress characteristics of the load cell is varied according to loading positions with structure parameters, and caculated output voltage of the load cell approximate to those of the real manufactured ones. As a result, this study will offer efficient design and analysis technique for making special and variety capacity of load cells.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.145-148
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• 2001

In this paper, polycrystalline silicon thin film transistor using by Solid Phase Crystallization(SPC) were fabricated, and these devices were measured and analyzed the electrical output and transfer characteristics along to DC voltage stress. The transfer characteristics of polycrystalline silicon thin film transistor depended on drain and gate voltages. Threshold voltage is high with long channel length and narrow channel width. And output characteristics of polycrystalline silicon thin film transistor flowed abruptly much higher drain current. The devices induced electrical stress are decreased drain current. At last, field effect mobility is the faster as channel length is high and channel width is narrow.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.126-132
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• 1995

The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.26-32
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• 1997

The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.289-292
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• 2007

The flyback converter is one of the most attractive isolated converters in small power applications because of its simple structure. However, it suffers from high device stress, large transformer size, and high voltage stress across switch and diode. To solve these problems a new cost-effective PWM single-switch isolated converter is proposed. The proposed converter has no output filter inductor, reduced voltage stress on the secondary devices, and reduced transformer size. Moreover, the switch turnoff loss is reduced and no dissipative snubber across the secondary diode is required. Therefore, it features a simple structure, low cost, and high efficiency. The operational principle and characteristics of proposed converter are presented compared with flyback converter and verified experimentally.