The Analysis of Transfer and Output characteristics by Stress in Polycrystalline Silicon Thin Film Transistor

다결정 실리콘 박막 트랜지스터에서 스트레스에 의한 출력과 전달특성 분석

In this paper, polycrystalline silicon thin film transistor using by Solid Phase Crystallization(SPC) were fabricated, and these devices were measured and analyzed the electrical output and transfer characteristics along to DC voltage stress. The transfer characteristics of polycrystalline silicon thin film transistor depended on drain and gate voltages. Threshold voltage is high with long channel length and narrow channel width. And output characteristics of polycrystalline silicon thin film transistor flowed abruptly much higher drain current. The devices induced electrical stress are decreased drain current. At last, field effect mobility is the faster as channel length is high and channel width is narrow.