9 |
(2011)
Physica status solidi. A, Applications and materials science : PSS Effects of high-pressure H2O-annealing on amorphous IGZO thin-film transistors /
208
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, 2231
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10 |
(2011)
IEEE electron device letters : a publication of the IEEE Electron Devices Society Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits /
32
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, 1385
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11 |
(2011)
Journal of the Society for Information Display Design of a low-power-consumption a-IGZO TFT-based Vcom driver circuit with long-term reliability /
19
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, 825
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6 |
(2011)
IEEE electron device letters : a publication of the IEEE Electron Devices Society A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets /
33
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, 812
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3 |
(2011)
AIP advances Bias-induced migration of ionized donors in amorphous oxide semiconductor thin-film transistors with full bottom-gate and partial top-gate structures /
2
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, 032129
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4 |
(2012)
Journal of information display A gate driver circuit for IGZO TFTs driven by two clock signals /
13
(4)
, 179
|
23 |
(2011)
ACS applied materials & interfaces High-Performance Low-Cost Back-Channel-Etch Amorphous Gallium-Indium-Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel /
5
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, 12262
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2 |
(2011)
Journal of display technology A Low-Power Single-Input Level Shifter for Oxide Thin-Film Transistors /
9
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, 71
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12 |
(2013)
IEEE electron device letters : a publication of the IEEE Electron Devices Society Temperature Sensor Made of Amorphous Indium–Gallium–Zinc Oxide TFTs /
34
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, 1569
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None |
(2011)
Solid-state electronics A simple shift register circuit for depletion-mode oxide TFTs /
79
(None)
, 2
|
13 |
(2011)
ACS applied materials & interfaces Chemical Stability and Electrical Performance of Dual-Active-Layered Zinc–Tin–Oxide/Indium–Gallium–Zinc–Oxide Thin-Film Transistors Using a Solution Process /
5
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, 6108
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38 |
(2011)
Journal of physics. D, applied physics The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors /
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None |
(2011)
Materials Research Society symposia proceedings Highly reliable passivation layer for <I>a</I>-InGaZnO thin-film transistors fabricated using polysilsesquioxane /
1633
(None)
, 139
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5 |
(2011)
Applied physics letters Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y<SUB>2</SUB>O<SUB>3</SUB> passivation (5 pages) /
105
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4 |
(2011)
Journal of information display A scan driver circuit for depletion-mode oxide TFTs with stable output waveforms /
15
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12 |
(2015)
ECS journal of solid state science and technology : jss Modification of Electrode-Etchant for Sidewall Profile Control and Reduced Back-Channel Corrosion of Inverted-Staggered Metal-Oxide TFTs /
4
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, Q124
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7 |
(2011)
Journal of the Korean Physical Society Effect of sulfur incorporation on solution-processed ZTO thin-film transistors /
66
(7)
, 1144
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3 |
(2011)
IEEE transactions on electron devices Effect of SiO<SUB>2</SUB> and SiO<SUB>2</SUB>/SiN<SUB><I>x</I></SUB> Passivation on the Stability of Amorphous Indium-Gallium Zinc-Oxide Thin-Film Transistors Under High Humidity /
62
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, 869
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4 |
(2015)
Journal of display technology A Low-Power Data Driving Method With Enhanced Charge Sharing Technique for Large-Screen LCD TVs /
11
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7 |
(2015)
IEEE transactions on electron devices High-Performance Homojunction a-IGZO TFTs With Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes /
62
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, 2212
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1 |
(2011)
Molecular crystals and liquid crystals New red phosphorescent iridium(III) complex with 4-tert-Butylphenyl-boronic acid of organic borane /
636
(1)
, 67
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7 |
(2011)
IEEE transactions on electron devices Anomalous Increase in Field-Effect Mobility in In–Ga–Zn–O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer /
63
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, 2785
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11 |
(2011)
IEEE electron device letters : a publication of the IEEE Electron Devices Society Fast Threshold Voltage Compensation AMOLED Pixel Circuit Using Secondary Gate Effect of Dual Gate a-IGZO TFTs /
37
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, 1450
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5 |
(2011)
ECS journal of solid state science and technology : jss Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching /
6
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, P300
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1 |
(2011)
Nature communications Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects /
10
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, 2424
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6 |
(2011)
Semiconductor science and technology High performance of solution-processed SnO<SUB>2</SUB> thin-film transistors by promotion of photo-exposure time-dependent carrier transport during the pre-annealing stage /
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1 |
(2011)
Scientific reports Origin of light instability in amorphous IGZO thin-film transistors and its suppression /
11
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