• ETRI Journal
• /
• 제43권6호
• /
• pp.1103-1112
• /
• 2021

In this study, we present a venting clip for high-power applications that is intended to reduce stray inductance. To reduce the stray inductance of packages in high-power applications, the proposed venting clip features slots are inserted onto a conventional clip. A conventional clip and the proposed venting clip were designed and fabricated to compare the respective stray inductance. The inductance of the proposed venting clip was approximately 15.8% than that of the conventional clip at a frequency of 100 kHz. Through a comparison between the conventional and venting clips, it is confirmed that the proposed venting clip is superior for high-power applications in terms of decreasing inductance. With reduced inductance, the switching-loss for such applications is also expected to decrease. Moreover, the impedance of the venting clip decreased by approximately 15.5% compared with that of the conventional clip at a frequency of 100 kHz. The venting clip, which has reduced resistive component, is also expected to decrease conduction loss in highpower applications.

• Journal of Power Electronics
• /
• 제16권4호
• /
• pp.1256-1267
• /
• 2016

Distributed stray inductance exerts a significant influence on the turn-off voltages of power switching devices. Therefore, the design of low stray inductance bus bars has become an important part of the design of high-power converters. In this study, we first analyze the operational principle and switching transient of a T-type converter. Then, we obtain the commutation circuit, categorize the stray inductance of the circuit, and study the influence of the different types of stray inductance on the turn-off voltages of switching devices. According to the current distribution of the commutation circuit, as well as the conditions for realizing laminated bus bars, we laminate the bus bar of the converter by integrating the practical structure of a capacitor bank and a power module. As a result, the stray inductance of the bus bar is reduced, and the stray inductance in the commutation circuit of the converter is reduced to more than half. Finally, a 10 kVA experimental prototype of a T-type converter is built to verify the effectiveness of the designed laminated bus bar in restraining the turn-off voltage spike of the switching devices in the converter.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2014년도 전력전자학술대회 논문집
• /
• pp.285-286
• /
• 2014

Recently, the unipolar gate power source is preferred in inverter system because of cost reduction reason. In this case, designer uses 0V source for turning-off the switching devices instead of negative voltage at Vee source. If the gate driver circuit has some stray inductance, the gate voltage would happen a surge voltage. This paper analyzes that of stray inductance effect during the switching behavior in the circuit and the proposed solutions were verified by pulse test.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2013년도 추계학술대회 논문집
• /
• pp.109-110
• /
• 2013

3-level 인버터에서 DC_Link와 각 leg의 스위치 간 라인에 존재하는 Stray inductance로 인해 스위칭 시 Voltage spike가 발생하게 된다. 3-level 인버터는 고전압, 대전력에서 주로 사용되기 때문에 Voltage spike로 인해 전력반도체 스위치에 순간적으로 큰 전압이 인가되어 정격 이하의 운전에서도 스위치가 소손되어 전체 시스템의 고장을 초래할 수 있다. 이와 같은 사고를 방지하기 위해 본 논문에서는 DC_Link 커패시터를 분할로 구성하여 Stray inductance를 균일하게 하고 전반적으로 최소화 하였다. Stray inductance는 Double Pulse Test 시뮬레이션 및 실험으로 확인하였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 A
• /
• pp.416-419
• /
• 1995

An analysis of a new load resonant inverter considering stray inductance is given. There are several different types for load resonant inverters. They can offer zero turn-on as well as zero turn-off switching losses, yielding high efficiency at high power and high frequencies. However, they didn't consider the influences of stray inductance. In conventional topology using lossless snubber capacitor, stray inductances result in very high frequency resonant current. Especially, these influences can be problematic in high power system such as induction heating system with large current of some 10A associated with it. These currents increase EMI problem, give harmful effects in gate driver's operation and increase loss of dc-link capacitor as well as snubber capacitor. Therefore, the effect of stray inductances should be treated and reduced. This paper presents a new load resonant inverter topology, which can reduce the effect of stray inductances.

• ETRI Journal
• /
• 제43권5호
• /
• pp.891-899
• /
• 2021

We propose a stray inductance extraction method on power modules of the few-kilovolts/several-hundred-amperes class using only low voltages and low currents. The method incorporates a double-pulse generator, a level shifter, a switching device, and a load inductor. The conventional approach generally requires a high voltage of more than half the power module's rated voltage and a high current of around half the rated current. In contrast, the proposed method requires a low voltage and low current environment regardless of the power module's rated voltage because the module is measured in a turn-off state. Both theoretical and experimental results are provided. A physical circuit board was fabricated, and the method was applied to three commercial power modules with EconoDUAL3 cases. The obtained stray inductance values differed from the manufacturer-provided values by less than 1.65 nH, thus demonstrating the method's accuracy. The greatest advantage of the proposed approach is that high voltages or high currents are not required.

• 대한전기학회논문지
• /
• 제45권2호
• /
• pp.199-215
• /
• 1996

A new Class-D series-loaded resonant inverter topology which can minimize the influences of the stray inductances is presented. In the conventional Class-D inverters, the stray inductances not only result in the overvoltage which gives the switches voltage stresses, but also in the high frequency resonant currents during turn-off transients. The new Class-D inverter is superior to the conventional Class-D inverters with respect to minimization of the problems caused by the stray inductances and is more suitable for high power and high frequency inverter systems such as induction heating. The validity of the new Class-D inverter is verified by simulation and experimental results.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
• /
• pp.178-180
• /
• 1994

In recent days, the inverter is widely used at the industrial applications. In the range lower than 100[kW], IGBT(Insulated Gate Bipolar Transistor) is most widely used as the switching device. In that case of IGBT, the rising time and the filling time are very short(about $200[ns]{\sim}300[ns]$). Especially for motor control applications, the switching frequency is required to be increased for better dynamic performance of the drive. However, the higher switching frequency leads to the unexpected problem occurs such as voltage spike due to stray inductance in the bus at switching instant. In this paper, a new methodology for reducing the stray inductance existing in the bus that induces the voltage spike will be presented.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권4호
• /
• pp.253-260
• /
• 1999

In this paper, the impedance characteristic of wire-plate pulsed plasma reactor was investigated by experiment. The experiment have carried out under the several conditions of voltage, wire length and wire-plate distance. The impedance of reactor wad decreased with increasing voltage and wire length. The nature of discharge in reactor was changed from streamer corona to spark with increasing incident energy, from which we understood the critical energy density between the two discharges. Fromthis experiment, we proposed the method for the impedance matching between pulse generator and pulsed plasma reactor. Additionally, we succeeded in the analysis ofstray inductance of 0.5MW reactor using EMTP (ElectroMagnetic Transients Program). This means that EMTP is also useful for the analysis of inevitable stray inductance of forthcoming a large scale reactor.

• 전기학회논문지
• /
• 제65권1호
• /
• pp.88-96
• /
• 2016

In this paper, the GaN FET based phase-shift full-bridge dc-dc converter design is implemented. Switch characteristics of GaN FET were analyzed in detail by comparing state-of-the-art Si MOSFET. Owing to the low conduction resistance and parasitic capacitance, it is expected to GaN FET based power conversion system has improved performance. However, GaN FET is vulnerable to electric interference due to the relatively low threshold voltage and fast switching transient. Therefore, it is necessary to consider PCB layout to design GaN FET based power system because PCB layout is the main reason of stray inductance. To reduce the electric noise, gate voltage of GaN FET is analyzed according to operation mode of phase-shift full-bridge dc-dc converter. Two 600W phase-shifted full-bridge dc-dc converter are designed based on the result to evaluate effects of stray inductance.