• Title/Summary/Keyword: step coverage

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Implementation of CAD Data Translation System using STEP (STEP을 이용한 CAD 데이터 변환 시스템의 구현)

  • 이영준;고굉욱;유상봉
    • Korean Journal of Computational Design and Engineering
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    • v.1 no.2
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    • pp.87-96
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    • 1996
  • IGES is a file format which has gained widespread use but has certain limitations such as limited information coverage and ambiguous definitions. In order to overcome the limitations of existing neutral file formats, STEP has been developed as a more comprehensive mechanism for product data exchange by ISO. This paper describes a file translation system between IGES and STEP. In this system, three EXPRESS schemata are defined for IGES, STEP and the translation relationship between IGES and STEP. Object codes are generated from the schemata and linked with file access libraries to IGES and STEP files. The translation was verified by visualization and reverse translation. The system developed in this study can easily applied to translate other file formats because the file structure and translation relationship are defined in EXPRESS - a high level information modeling language.

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Preparation of Alumina Composite Membranes by Chemical Vapor Deposition (화학기상증착법을 이용한 알루미나 복합 분리막의 제조)

  • 안상욱;최두진;현상훈
    • Journal of the Korean Ceramic Society
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    • v.31 no.8
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    • pp.927-933
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    • 1994
  • Alumina composite membranes were prepared by chemical vapor deposition (CVD) using aluminum-tri-isopropoxide as a precursor. Porous alumina supports were used in deposition, which were in disk shape with mean pore diameter of 0.1 ${\mu}{\textrm}{m}$ and prepared by slip-coasting process. film deposition morphology on porous support was simulated through depositing alumina film on polycrystalline silicon pattern, and its step coverage observed by SEM showed one deviated from uniform step coverage. N2 permeability through composite membranes and the pressure dependence decreased as the deposition time increased. Initially, the N2 permeability of the top layer was tend to decrease rapidly, and then the degree of decrease in N2 permeability was tend to diminish with deposition time. The N2 permeability increased with heat treatment temperature and the crack was generated in top layer at 100$0^{\circ}C$.

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Physical and Electrical Characteristics of Silicon Dielectric Thin Films by Atomic layer Deposition (ALD법으로 증착된 실리콘 절연박막의 물리적.전기적 특성)

  • 한창희;이주현;김운중;이원준;나사균
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.169-169
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    • 2003
  • 실리콘 절연막은 반도체 및 디스플레이 소자의 gate 절연막과 보호막으로, 그리고 배선공정에서는 층간절연막(ILD, Inter Layer Dielectric)으로 사용하는데, 주로 IPCVD, PECVD, APCVD법에 의하여 증착되고 있다. 그러나 이러한 방법들은 반도체 소자의 고집적화가 진행됨에 따라 증착온도와 step coverage 및 물성 이 문제점으로 대두되고 있다. 이러한 문제점들을 해결할 수 있는 원자층 증착(ALD, Atomic Layer Deposition)기술은 기판 표면에서의 self-limiting reaction을 통해 매우 얇은 박막을 형성할 수 있고, 두께 및 조성 제어를 정확히 할 수 있으며, 복잡한 형상의 기판에서도 우수한 step coverage를 얻을 수 있어 초미세패턴의 형성과 매우 얇은 두께에서 균일한 물리적, 전기적 특성이 요구되는 초미세 반도체 공정에 적합하다. 또 저온에서 증착이 가능해 유리를 기판으로 사용하는 TFT-LCD소자의 gate 절연막에 적용이 가능하다.

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Characteristics of Tungsten Silicide Film Formed by Dichlorosilane Reduction ($SiH_2$$CI_2$ 환원에 의해 형성된 WSix 박막 특성)

  • 최동규;고철기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.9
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    • pp.15-19
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    • 1992
  • Tungsten silicied (WSix) has been widely used for interconnection line to improve the speed and reliability of devices. It is known that WSix formed by silane reduction has poor step coverage and poor adhesion. In this research, WSix by dichlorosilane reduction showed excellent adhesion in cellophane adhesive tape test, and improved step coverage by two times. The crystal structure of the as-deposited WSix film by silane reduction was transformed from the hexagonal to the tetragonal structure during annealing treatment, while that by dichlorosilane reduction kept the stable tetragonal structure. The fluorine concentration in the WSix film by dichlorosilane was lower than that by silane.

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Atomic Layer Deposition에 의해 제조된 Cobalt Oxide 박막의 특성

  • Kim, Jae-Gyeong;Choe, Gyu-Ha;Park, Gwang-Min;Lee, Won-Jun;Kim, Jin-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.207-207
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    • 2010
  • 휴대용 기기의 사용이 증가하면서 전지의 고용량화와 소형화가 요구되고 있다. 특히 의료용 센서 기기에서는 소형화가 매우 중요하며 인체에 해로운 물질로 구성되지 않는 것이 바람직하다. 최근 고체전해질을 사용하는 마이크로 배터리가 개발되고 있으나, 에너지 저장용량이 작아 응용분야가 제한적이다. Silicon wafer 위에 형성된 고단차의 3차원 박막 배터리를 형성한다면 표면적 증가에 의해 에너지 저장용량 역시 크게 증가할 것이다. 따라서 고단차의 3차원 구조위에 confomal한 박막을 형성하기 위해서는 기존 물리증착방법과는 달리 새로운 step coverage가 우수한 박막증착법이 필요하다. 본 연구에서는 atomic layer deposition(ALD)으로 박막 배터리의 cathode 물질인 $LiCoO_2$를 증착하기 위한 기초연구로서 cobalt oxide 박막의 ALD 공정을 연구하였다. Cobalt +2가 전구체와 $O_3$를 교대로 공급하여 박막을 증착하고 그 박막의 물리적, 화학적, 전기적 특성을 조사하였다. 이를 통해 exposure와 기판온도가 박막의 특성에 미치는 영향을 고찰하였다. 또한 pattern wafer위에 박막을 증착하여 step coverage를 조사하였다.

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RL-based Path Planning for SLAM Uncertainty Minimization in Urban Mapping (도시환경 매핑 시 SLAM 불확실성 최소화를 위한 강화 학습 기반 경로 계획법)

  • Cho, Younghun;Kim, Ayoung
    • The Journal of Korea Robotics Society
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    • v.16 no.2
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    • pp.122-129
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    • 2021
  • For the Simultaneous Localization and Mapping (SLAM) problem, a different path results in different SLAM results. Usually, SLAM follows a trail of input data. Active SLAM, which determines where to sense for the next step, can suggest a better path for a better SLAM result during the data acquisition step. In this paper, we will use reinforcement learning to find where to perceive. By assigning entire target area coverage to a goal and uncertainty as a negative reward, the reinforcement learning network finds an optimal path to minimize trajectory uncertainty and maximize map coverage. However, most active SLAM researches are performed in indoor or aerial environments where robots can move in every direction. In the urban environment, vehicles only can move following road structure and traffic rules. Graph structure can efficiently express road environment, considering crossroads and streets as nodes and edges, respectively. In this paper, we propose a novel method to find optimal SLAM path using graph structure and reinforcement learning technique.

Esthetic Root Coverage for Gingival Recession (심미적인 결과를 얻기 위한 치근 피개술)

  • Ahn, MyungHwan
    • Journal of the Korean Academy of Esthetic Dentistry
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    • v.26 no.1
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    • pp.4-16
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    • 2017
  • In dental esthetics, soft tissue plays an important part, probably very large portion of it. A clear understanding of the periodontal tissues and its management around teeth and implants help us to develop concepts for a modern dental treatment that addresses the needs of demanding patients in regard of esthetics and durability. When we talk about esthetic, we can say that one of the most important element is a harmonization with gingiva (soft tissue) called 'Pink Esthetic' As for the pink esthetics, gingival line(contour) takes most of the influence on esthetic result; it consists of labial gingival level, interproximal papilla height, and a line that connects them. In the gingival recession, labial gingival level and gingival contour move to the apical portion, and the root area is exposed. It leads to the unesthetic result. Root coverage technique is classically used to treat gingival recession (marginal tissue recession) of natural teeth. It is an essential technique on periodontal plastic surgery part. It is also a very useful technique to recover soft tissue problems in implant dentistry. So, root coverage technique must be mastered for a good implant esthetic result. The general overview of root coverage procedures will be discussed with step by step explanation to get more esthetic result.

Filling the Submicron Contact Holes with Al Alloys (AI 합금의 Contact Hole Filling 에 관한 연구)

  • 김용길
    • Journal of the Korean Vacuum Society
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    • v.2 no.4
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    • pp.474-479
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    • 1993
  • Submicron contact hole filling with aluminum alloys has been achieved with a multistep metallization method, which utilizes a metal " flow" or self-diffusion process at elevated temperatures after the metal was sputter-deposited. A multi-chamber, modular sputtering system was employed to deposit aluminum alloys and subsequently to anneal the deposited metal films under vacuum at high temperatures. The film were deposited on 200 mm wafers with planar, dc magnetron sputtering sources without anysubstrate bias. The basic process steps studied for the multistep metallization include an initial layer deposition at low temperatures less than $100^{\circ}C$, and an annealin gstep at elevated temperatures, between 450 and $550^{\circ}C$. The degree of planarization or step coverage was dependent strongly upon the temperature and time of the flow step and complete filling of the submicron contacts with aluminum alloys was achieved. Responsible mechanisms for the enhancement in step coverge and factros determining uniform and reproducible flow of aluminum alloys during the high temperauture step are discussed.discussed.

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