Characteristics of Tungsten Silicide Film Formed by Dichlorosilane Reduction

$SiH_2$$CI_2$ 환원에 의해 형성된 WSix 박막 특성

Tungsten silicied (WSix) has been widely used for interconnection line to improve the speed and reliability of devices. It is known that WSix formed by silane reduction has poor step coverage and poor adhesion. In this research, WSix by dichlorosilane reduction showed excellent adhesion in cellophane adhesive tape test, and improved step coverage by two times. The crystal structure of the as-deposited WSix film by silane reduction was transformed from the hexagonal to the tetragonal structure during annealing treatment, while that by dichlorosilane reduction kept the stable tetragonal structure. The fluorine concentration in the WSix film by dichlorosilane was lower than that by silane.