• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.307-310
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• 2009

In order to develop SOFC cell performance, many kind of things were investigated. Electrode microstructure is the one of them therefore we focus on electrodes fabrication easily and efficiently. We can fabricate electrodes easily with Pt using DC magnetron sputtering and sintering. However sputtering is difficult to handle and to grow porous electrodes what we require. On the other hand sintering is much easier than sputtering to make porous and adhesive electrodes. So in this paper we deal with sintering and optimize to deposit electrodes conditions by analyzing electrode microstructure with sacnning electron microscopy(SEM) micrograph. Also, we compare electrochemical performance of cells fabricated by sputtering and sintering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.183-186
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• 1996

BaTiO$_3$thin films were deposited on Pt/SiO$_2$/Si substrates by RF sputtering technique. The structural and crystallographic properties were studied with deposition conditions and annealing temperatures. Deposition rates and structural properties of BaTiO$_3$thin films were investigated by the SEM, XRD and AFM. The thickness of BaTiO$_3$thin films deposited with optimized conditions was 5200[$\AA$]. The grain size was found to increase remarkably with increasing sputtering power and independent on the sputtering pressure.

• 한국자기학회지
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• 제21권6호
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• pp.214-218
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• 2011

본 연구에서는 DC 마그네트론 스퍼터링을 이용해 MgO 단결정 기판 위에 성장된 Ag/CoFeB 박막의 스퍼터링 조건에 따른 박막 미세구조의 변화를 연구하였다. Ag 박막의 결정성 및 표면 거칠기는 인가전력(sputtering power) 및 증착온도의 변화에 따라 증착온도가 증가하는 경우 (200) 방향의 결정성이 향상되는 것을 확인하였으며, 인가전력이 증가되는 경우 표면 거칠기가 감소하는 것을 확인하였다. 또한 고분해능 TEM(transmission electron microscopy) 및 XRR(X-ray reflectivity) 측정을 통해 MgO 기판 위 Ag층의 켜쌓기 성장 및 MgO 기판과 Ag층 사이에 산화층에 해당하는 계면층이 존재하는 것을 알 수 있었으며, 증착온도의 증가에 따른 Ag의 섬상구조 형성 및 intermixing 효과에 의한 Ag/CoFeB 계면층의 변화 및 자기적 특성의 변화를 연구하였다.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.966-972
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• 2010

Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.

• 한국세라믹학회지
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• 제51권3호
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• pp.190-196
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• 2014

Flexible $TiO_2$ films were deposited as dielectric materials for high-energy-density capacitors on polyethylene terephthalate (PET) substrates using a roll-to-roll sputtering method. Both the growth behavior and electrical properties of the flexible $TiO_2$ films were dependent on the sputtering pressure and $O_2$/Ar gas ratio during the sputtering process. All $TiO_2$ films had an amorphous structure regardless of the sputtering conditions due to the low substrate temperature. Microstructural characteristics such as the surface morphology and roughness of the films degraded with an increase in the sputtering pressure and $O_2$ gas concentration. The $TiO_2$ films deposited at a low pressure showed better electrical properties than those of films deposited at a high pressure. The $TiO_2$ films prepared at 10 mTorr exhibited a dielectric constant of approximately 90 at 1 kHz and a leakage current density of $5{\sim}6{\times}10^{-7}A/cm^2$ at 3 MV/cm.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권1호
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• pp.11-16
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• 2001

CuNi alloy films are deposited by co-sputtering of dual targets (Cu and Ni, respectively). Effects of the co-sputtering conditions, such as powers applied to the targets, deposition pressures, and substrate temperatures, on the structural and electrical properties of deposited films are systematically investigated. The composition ratio of Ni/Cu is almost linearly decreased by increasing the DC power applied to the Cu target from 25.6 W to 69.7 W with the RF power applied to the Ni target unchanged(140 W). it is noted that the chamber pressure during deposition and the film thickness give rise to a change of the Ni/Cu ratio within the films deposited. The former may be due to a higher sputtering yield of Cu atom and the latter due to the re-sputtering phenomenon of Cu atoms on the surface of deposited film. The film deposited at higher pressures or at lower substrate temperatures have a smaller crystallite size, a higher electrical resistivity, and much more voids. This may be attributed to a lower surface mobility of sputtered atoms over the substrate.

• 한국표면공학회지
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• 제33권5호
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• pp.349-355
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• 2000

Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.71-73
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• 1994

In this paper we have investigated discharge conditions(parameters of this experiment) in facing targets sputtering system and fabricated $Al_{N}$ thin films. The parameters of this study are diameter of wing(d) and distance(L) between two facing targets. Varing discharge conditions, the discharge characteristics are wide different. The optimal conditions in this experiments are d = 6.5 [cm], L = 6.5[cm]

• Tribology and Lubricants
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• 제11권1호
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• pp.37-43
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• 1995

Sputtering parameters such as N$_{2}$ flow percentage and bias voltage in reactive TiN film deposition by RF magnetron sputtering system were selected to investigate the effects of sputtering deposition conditions on tribological characteristics of TiN films. Wear scar of the steel ball damaged by TiN films was measured by SEM to understand wear behavior of deposited TiN films. Crystallization and induced strain of TiN were detected by XRD. Wear mode changed from plastic to brittle with increasing N$_{2}$ ratio. Wear scar by sliding with TiN film deposited at around 27% N$_{2}$ ratio was maximum. The results indicate that bias voltage affects tribological behavior by formation of high density film and internal stress.