• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.6 no.3
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• pp.19-42
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• 2011

This research focuses on the case studies for operating scheme of technology venture incubation centers located at science parks, technology parks, and foreign universities. Technology venture incubation centers in foreign countries commonly vitalize local economy, create job markets, and promote new venture industry. There is a distinct difference in many ways between foreign and domestic incubation centers. Foreign countries consider the position of incubation centers at national policy level. They characterize the operation of incubation centers into technology fields. They install the networks cooperating with experts and promote the management. Tenant companies moved in incubation centers enhance the degree of completion through industry-university cooperation. Universities and research centers utilize the results of R&D to make the business, accelerate to venture establishment with technical skills, and foster technology entrepreneurs by spin-offs. Through case studies we propose implications helpful to manage domestic technology incubation centers and management methods to be successful centers.

• Journal of the Korean association of regional geographers
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• v.21 no.3
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• pp.489-502
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• 2015

Sometimes called the Silicon Fen, the Cambridge cluster is well known as the most innovative hi-tech cluster in the world. This paper attempts to explore the evolutionary dynamics of the Cambridge cluster, drawing upon the triple-helix approach. To understand the evolutionary dynamics of the Cambridge cluster, it is important to examine the role and impact of the University of Cambridge, which is conceived as one of the best higher educational institutions in the world. The Cambridge cluster has been evolved on the basis of a strong university-industry relationship. University spin-outs have a long tradition in Cambridge with the history of more than a century, and they have played a critical role in making the cluster more innovative. Business networks and social capital molded for a long time in the region become a foundation for active local spin-out activities. However, since 2000 the central government started steadily to require British universities to be an entrepreneurial university, with the purpose of the reduction of university subsidies. As a result of this, spin-out activities in the Cambridge cluster show a sharp decline, which is a factor of threatening the dynamic evolution of the cluster.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.362-368
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• 1998

The magnetic properties, thermal stability and anti-corrosion properties of $Cr_86Al_14$ spin valves multilayers were studied. It was found that the magnetic properties of $Cr_86Al_14$ spin valves depend on the thickness of antiferromagnetic, ferromagnetic and non-ferromagnetic layers. Exchange coupled field ($H_{ex}$) and magnetoresistance ratio (%) showed the largest value of 20 Oe, 2 % in $glass/Cr_{86}Al_{14}(600 $\AA$)/Ni_{81}Fe_{19}(50$\AA$)/Cu(40 $\AA$)/Ni_{81}Fe_{19}(40 $\AA$)$ spin valves. The $H_{ex}$ MR ratios (%) of CrAl and FeMn spin valves were decreased with increasing annealing temperatures and were lost at 150 $^{\circ}C$, 250 $^{\circ}C$ respectively. Based on these result, it was elucidated that CrAl is more thermally stable than FeMn. It was also shown that there was no change of $H_{ex}$ MR ratios in CrAl, while FeMn was changed and lost 15 days later in corrosion resistance test under 35 $^{\circ}C$, 90 % humidity condition. FeMn was found to be pitted and peeled off 15 days later by SEM micrographic analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.206.2-206.2
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• 2015

최근 비정질 산화물 반도체 thin film transistor(TFT)는 차세대 투명 디스플레이로 많은 관심을 받고 있으며 활발한 연구가 진행되고 있다. 산화물 반도체 TFT는 기존의 비정질 실리콘 반도체에 비하여 큰 on/off 전류비, 높은 이동도 그리고 낮은 구동전압으로 인하여 차세대 투명 디스플레이 산업에 적용 가능하다는 장점이 있다. 한편 기존의 sputter나 evaporator를 이용한 증착 방식은 우수한 막의 특성에도 불구하고 많은 시간과 제작비용이 든다는 단점을 가지고 있다. 따라서 본 연구에서는 별도의 고진공 시스템이 필요하지 않을 뿐만 아니라 대면적화에도 유리한 용액공정 방식을 이용하여 박막 트렌지스터를 제작하였으며 thermal 열처리와 microwave 열처리 방식에 따른 전기적 특성을 비교 및 분석하고 각 열처리 방식의 열처리 온도 및 조건을 최적화 하였다. 제작된 박막 트렌지스터는 p-type bulk silicon 위에 산화막이 100 nm 형성된 기판에 spin coater을 이용하여 Al-Zn-Sn-O 박막을 형성하였다. 연속해서 photolithography 공정과 BOE (30:1) 습식 식각 과정을 이용해 활성화 영역을 형성하여 소자를 제작하였다. 제작 된 소자는 Pseudo-MOS FET구조이며, 프로브 탐침을 증착 된 채널층 표면에 직접 접촉시켜 소스와 드레인 역할을 대체하여 동작시킬 수 있어 전기적 특성평가가 용이하다는 장점을 가지고 있다. 그 결과, microwave를 통해 열처리한 소자는 100oC 이하의 낮은 열처리 온도에도 불구하고 furnace를 이용하여 열처리한 소자와 비교하여 subthreshold swing(SS), Ion/off ratio, field-effectmobility 등이 개선되는 것을 확인하였다. 따라서, microwave 열처리 공정은 향후 저온 공정을 요구하는 MOSFET 제작 시의 훌륭한 대안으로 사용 될 것으로 기대된다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• Tribology and Lubricants
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• v.24 no.5
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• pp.255-263
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• 2008

Adhesion tests were conducted to investigate the adhesion characteristics between mold and thermoplastic polymer film. Coating of anti-sticking layer (ASL), a kind of polymer material, imprint pressure, and separation velocity were considered as the process conditions. A piece of fused silica without patterns on its surface was used as a mold and the thermoplastic polymer films were made on Si substrate by spin-coating the commercial polymer solution such as mr-I PMMA and mr-I 7020. The ASL was derived from (1H, 1H, 2H, 2H - perfluorooctyl) trichlorosilane($F_{13}$-OTS) and coated on the fused silica mold in vapor phase. The pull-off force was measured in various process conditions and the surfaces of the mold and the polymer film were observed after separation. It was found that the adhesion characteristics between the mold and the thermoplastic polymer film and the release performance of ASL were changed according to the process conditions. The ASL was effective to reduce the pull-off force and the damage of polymer film. In cases of the mold coated with ASL, the pull-off force did not depend on imprint pressure and separation velocity.

• Korean Journal of Materials Research
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• v.32 no.9
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• pp.384-390
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• 2022

A spin coating process for RRAM, which is a TiN/TiO₂/FTO structure based on a PTC sol solution, was developed in this laboratory, a method which enables low-temperature and eco-friendly manufacturing. The RRAM corresponds to an OxRAM that operates through the formation and extinction of conductive filaments. Heat treatment was selected as a method of controlling oxygen vacancy (V_O), a major factor of the conductive filament. It was carried out at 100 ℃ under moisture removal conditions and at 300 ℃ and 500 ℃ for excellent phase stability. XRD analysis confirmed the anatase phase in the thin film increased as the heat treatment increased, and the Ti³⁺ and OH- groups were observed to decrease in the XPS analysis. In the I-V analysis, the device at 100 ℃ showed a low primary SET voltage of 5.1 V and a high ON/OFF ratio of 10⁴. The double-logarithmic plot of the I-V curve confirmed the device at 100 ℃ required a low operating voltage. As a result, the 100 ℃ heat treatment conditions were suitable for the low voltage driving and high ON/OFF ratio of TiN/TiO₂/FTO RRAM devices and these results suggest that the operating voltage and ON/OFF ratio required for OxRAM devices used in various fields under specific heat treatment conditions can be compromised.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.315-320
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• 2000

This paper presents the fabrication and test of a micropump with an electromagnetic actuator and a pair of aluminum flap valves. The actuator consists of a solenoid coil, a permanent magnet and an actuator diaphragm. The actuator diaphragm is fabricated by the spin coating of silicone rubber. The valve are passive ones and are fabricated by micromachining. The deflection of the fabricated actuator diaphragm is measured with a laser vibrometer. The deflection of the actuator diaphragm is proportional to the input current. The measured deflection of the fabricated diaphragm is $400 \mum$,/TEX> when the input is 118 mApp, and the cut-off frequency is 50 Hz. The maximum flow rate of the fabricated micropump with the electromagnetic actuator is about 5$0 \muell/min$ at 5 Hz when the input current and the duty ratio of the square was are 118 mApp and 50%, respectively.

• Structural Engineering and Mechanics
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• v.7 no.4
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• pp.377-386
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• 1999

The stress distribution in a symmetrically laminated composite plate subjected to in-plane compression are evaluated using finite element analysis. Six different finite element models are created for the study of stresses in the plate after buckling. Two finite element modelling approaches are adopted to obtain the stress distribution. The first approach starts with a full model of shell elements from which sub-models of solid elements are spin-off The second approach adopts a full model of solid elements at the beginning from which sub-models of solid elements are created. All sub-models have either 1-element thickness or 14-element thickness. Both techniques show high interlaminar direct and shear stresses at the free edges. The study also provides vital information of the distribution of all components of stresses along the unloaded edges in length direction and also in the thickness direction of the plate.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.212.2-212.2
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• 2015

본 연구에서는 용액 공정을 통해 제작한 IGZO, ITZO 박막 트랜지스터의 전기적 특성을 비교, 분석하였다. 실험에 사용된 용액의 농도는 In:Zn:Ga, In:Zn:Sn = 1:1:1로 제작하여 Spin-Coating을 통해 증착하였다. 두 소자 모두 $350^{\circ}C$에서 열처리 공정을 진행한 뒤, 전기적 특성을 측정 및 분석하였다. IGZO 박막 트랜지스터의 경우, Threshold Voltage, S.Swing, Mobility, On/Off ratio가 각각 2.2 V, 0.42, $0.18cm^2/Vs$, $1.5{\times}$10^5로 측정되었으나 ITZO 박막 트랜지스터의 경우, -6.92 V, 0.91, $0.43cm^2/Vs$, $2.1{\times}$10^5 로 IGZO보다 Negative한 방향으로 이동하였다. 이는 Sn이 Ga에 비해 Band gap이 넓고, 산소와의 결합력이 작기 때문에, ITZO 박막 트랜지스터가 Oxygen vacancy형성을 통한 Carrier density가 높은 것으로 판단된다.