• 제목/요약/키워드: spin transfer

검색결과 214건 처리시간 0.022초

Bi-directional Two Terminal Switching Device based on SiGe for Spin Transfer Torque (STT) MRAM

  • Yang, Hyung-Jun;Kil, Gyu-Hyun;Lee, Sung-Hyun;Song, Yun-Heub
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.385-385
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    • 2012
  • A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

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Strain-Sensing Characteristics of Multi-Walled Carbon Nanotube Sheet

  • Jung, Daewoong;Lee, Gil S.
    • 센서학회지
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    • 제22권5호
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    • pp.315-320
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    • 2013
  • In this paper, the properties of strain sensors made of spin-capable multi-walled carbon nanotubes (MWCNTs) were characterized and their sensing mechanisms analyzed. The key contribution of this paper is a new fabrication technique that introduces a simpler transfer method compared to spin-coating or dispersion CNT. Resistance of the MWCNT sheet strain sensor increased linearly with higher strain. To investigate the effect of CNT concentration on sensitivity, two strain sensors with different layer numbers of MWCNT sheets (one and three layers) were fabricated. According to the results, the sensor with a three-layer sheet showed higher sensitivity than that with one layer. In addition, experiments were conducted to examine the effects of environmental factors, temperature, and gas on sensor sensitivity. An increase in temperature resulted in a reduction in sensor sensitivity. It was also observed that ambient gas influenced the properties of the MWCNT sheet due to charge transfer. Experimental results showed that there was a linear change in resistance in response to strain, and the resistance of the sensor fully recovered to its unstressed state and exhibited stable electromechanical properties.

원자층 증착법과 용액 공정법으로 성장한 전자 수송층 산화주석 박막의 페로브스카이트 태양전지 특성 (Characteristics of Tin Oxide Thin Film Grown by Atomic Layer Deposition and Spin Coating Process as Electron Transport Layer for Perovskite Solar Cells)

  • 김기현;정성진;양태열;임종철;장효식
    • 한국재료학회지
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    • 제33권11호
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    • pp.475-481
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    • 2023
  • Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

페로브스카이트 구조를 가지는 CoFeX3(X = O, F, S, Cl) 합금의 자성과 전자구조에 대한 제일원리계산 (First Principle Studies on Magnetism and Electronic Structure of Perovskite Structured CoFeX3 (X = O, F, S, Cl))

  • 제갈소영;홍순철
    • 한국자기학회지
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    • 제26권6호
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    • pp.179-184
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    • 2016
  • 스핀전달토크(Spin-Transfer Torque: STT) MRAM의 상용화를 위해서는 낮은 반전전류와 높은 열적 안정성을 동시에 만족해야 하고, 이를 위해서는 큰 스핀 분극, 강한 수직자기이방성 에너지을 가지는 물질이 요구된다. 본 연구에서는 STT-MRAM에 적합한 물질로 알려진 B2 CoFe 면심에 X(O, F, S, Cl) 원자가 위치한 $CoFeX_3$ 합금의 전자구조와 자기결정이방성(Magnetocrystalline anisotropy: MCA) 에너지를 계산하였다. X 원자가 F나 Cl일 때는 페르미 준위에서의 스핀 분극율이 각각 97 %, 96 %로, 반쪽 금속에 근접한 전자구조를 가짐을 확인할 수 있었다. 뿐만 아니라 표면이 Co 원자로 끝나는 5층 박막은 모든 X에 대해 수직 자기이방성를 가졌으며, 특히 $CoFeCl_3$의 자기이방성 에너지는 약 1.0 meV/cell로 상당히 컸다. 따라서 6, 7 족 원소를 잘 활용하면 높은 스핀 분극율과 강한 수직 자기이방성를 동시에 가지는 물질을 제조할 수 있게 되어 STT-MRAM의 상용화에 기여를 할 수 있을 것으로 기대한다.

Anisotropy of the Electrical Conductivity of the Fayalite, Fe2SiO4, Investigated by Spin Dimer Analysis

  • Lee, Kee Hag;Lee, Jeeyoung;Dieckmann, Rudiger
    • Bulletin of the Korean Chemical Society
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    • 제34권2호
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    • pp.629-632
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    • 2013
  • Many properties of inorganic compounds are sensitive to changes in the point-defect concentrations. In minerals, such changes are influenced by temperature, pressure, and chemical impurities. Olivines form an important class of minerals and are magnesium-rich solid solutions consisting of the orthosilicates forsterite $Mg_2SiO_4$ and the fayalite $Fe_2SiO_4$. Orthosilicates have an orthorhombic crystal structure and exhibit anisotropic electronic and ionic transport properties. We examined the anisotropy of the electrical conductivity of $Fe_2SiO_4$ under the assumption that the electronic conduction in $Fe_2SiO_4$ occurs via a small polaron hopping mechanism. The anisotropic electrical conductivity is well explained by the electron transfer integrals obtained from the spin dimer analysis based on tight-binding calculations. The latter analysis is expected to provide insight into the anisotropic electrical conductivities of other magnetic insulators of transition metal oxides.

염료감응형 태양전지 투명전도성 막의 표면처리를 통한 계면 접촉 향상 및 재결합 방지 연구 (A Study on the Improvement of the Interface Contact and the Prevention of the Charge Recombination by the Surface Treatment of Transparent Conductive Oxide in Dye-sensitized Solar Cell)

  • 서현웅;홍지태;손민규;김진경;신인영;김희제
    • 전기학회논문지
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    • 제58권11호
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    • pp.2214-2218
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    • 2009
  • Dye-sensitized solar cell (DSC) has been considered as a possible alternative to current silicon based p-n junction photovoltaic devices due to its advantages of high efficiency, simple fabrication process and low production cost. Numerous researches for high efficient DSC in the various fields are under way even now. Among them, the compact layer, which prevents the back electron transfer between transparent conductive oxides and the redox electrolyte, is fabricated by various methods such as a ZnO dip-coating, $TiCl_4$ dip-coating, and Ti sputtering. In this study, we tried to fabricate the $TiO_2$ compact layer by the spin-coating method using aqueous $TiCl_4$ solution. The effect of the spin-coating method was checked as compared with conventional dip-coating method. As a result, DSC with a spin-coated compact layer had 33.4% and 6% better efficiency than standard DSC and DSC with a dip-coated compact layer.

Application of Transfer Insensitive Labeling Technique (TILT) in Ischemic Cerebrovascular Diseases

  • 이승구;김동익;김상흠;김시연;인연권
    • 대한자기공명의과학회:학술대회논문집
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    • 대한자기공명의과학회 2001년도 제6차 학술대회 초록집
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    • pp.169-169
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    • 2001
  • Purpose: To assess the clinical usefulness of Transfer Insensitive Labeling Technique (TILT) in t evaluation of ischemic cerebrovascular disease. Method: Arterial spin labeling (ASL) is a method of perfusion weighted imaging usin endogenous water as a tracer. To avoid MT-related artifacts, which is common in usual A technique, a transfer insensitive labeling technique (TILT) was used, which globall manipulate macromolecular spins in the same way by both labeling and reference preparatio while free water is labeled in one case and left unchanged in the other. Philips Interal 1.5 T system was used. 40cm FOV and 32 repeated measurements were done because of the wea perfusion signal. 5 slices of supratentorial brain were obtained in 5 patients {MCA infar (n=3), moyamoya disease (n=2)}. We simultaneously obtained contrast enhanced T2*-weighted perfusion MRI and correlate to TILT images.

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Electrical Bistable Characteristics of Organic Charge Transfer Complex for Memory Device Applications

  • Lee, Chang-Lyoul
    • Applied Science and Convergence Technology
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    • 제24권6호
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    • pp.278-283
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    • 2015
  • In this work, the electrical bistability of an organic CT complex is demonstrated and the possible switching mechanism is proposed. 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) and tetracyanoquinodimethane (TCNQ) are used as an organic donor and acceptor, respectively, and poly-methamethylacrylate (PMMA) is used as a polymeric matrix for spin-coating. A device with the Al/($Al_2O_3$)/PMMA:BCP:TCNQ[1:1:0.5 wt%]/Al configuration demonstrated bistable and switching characteristics similar to Ovshinsky switching with a low threshold voltage and a high ON/OFF ratio. An analysis of the current-voltage curves of the device suggested that electrical switching took place due to the charge transfer mechanism.

몰리브덴의 피리딘계 착물합성과 그 성질 (제1보). 옥소이소티오시아나토몰리브덴 (Ⅴ) 의 치환 피리딘늄염 (Synthesis and Characterization of Substituted Pyridine Complexes of Molybdenum (Ⅰ). Substituted Pyridinium Salts of Oxopentaisothiocyanatomolybdates(Ⅴ))

  • 오상오;김창수
    • 대한화학회지
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    • 제25권3호
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    • pp.177-182
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    • 1981
  • $[MoO(NCS)_5]^{2-}$의 벤조일피리딘늄 및 루티딘늄을 합성한 후 전기전도도, 자기모멘트, 가시 및 적외선스펙트라등에 이하여 이들의 구조를 조사하였다. 옥소오이소티오시아나토몰리브덴(Ⅴ)의 벤조일피리딘늄 및 루티딘늄염에서 티오시아나토의 질소가 몰리브덴과 결합되었으며 벤조일피리딘과 루티딘은 리간드가 아닌 양이온으로 존재함을 확인하였다. 이들 착물은 d-d전이와 전하이동전이가 일어 났으며 착물의 자기모멘트는 ${mu}_{spin-only}$ 값과 거의 같았다.

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Regional Innovation Policy and Venturing Clusters in Japan

  • Kendo Masayuki
    • 기술혁신연구
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    • 제14권2호
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    • pp.167-181
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    • 2006
  • This paper reviews regional innovation policy in Japan. 'Technopolis' policy, the first technology-based regional development policy in the world, was implemented in Japan. Nonetheless, technology-based regional endogenous development did not occur. Then, regional technology transfer was pursued. In order to make use of universities and public research institutes in a region for development, university-industry collaboration and cross-over, such as university spin-offs, were promoted. Within this background, new technology-based regional development policies have been introduced based on a cluster approach. These policies are the knowledge cluster Initiative and the industrial cluster program. However, existing companies have difficulty in carrying out innovation. This paper argues that a cluster to create new start-ups that carry out innovation is also needed and explains a new concept of venturing cluster. Based on this new cluster concept, this paper analyzes the situation of Sapporo in Japan, where many university spin-offs are being created in the biotechnology field.

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