• Title/Summary/Keyword: spin torque

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Macro-Model of Magnetic Tunnel Junction for STT-MRAM including Dynamic Behavior

  • Kim, Kyungmin;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.728-732
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    • 2014

  • Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

  • https://doi.org/10.5573/JSTS.2014.14.6.728 인용 PDF KSCI

Spin-stabilized platform model with two input and two output (2-입력 2-출력을 갖는 자전 안정화 플랫트폼 모델)

  • 유인억;이상정
    • 제어로봇시스템학회:학술대회논문집
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    • 1996.10b
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    • pp.804-807
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    • 1996

  • In this paper, a new model of TDF(two degree of freedom) spin-stabilized platform has been suggested. The platform driving signal modulated in the spinning frequency is described in demodulated form keeping its precession angular velocity. When a strong spinning torque exists, the cross-axis spring constant cannot be neglected in modelling of the platform precession dynamics. A linearized dynamic model of spin-stabilized platform pointing loop is derived and validated through the comparison between simulation and experimental results.

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Technology Trend of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM) (스핀전달토크형 자기저항메모리(STT-MRAM) 기술개발 동향)

  • Kim, D.K.;Cho, J.U.;Noh, S.J.;Kim, Y.K.
    • Journal of the Korean Magnetics Society
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    • v.19 no.1
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    • pp.22-27
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    • 2009

  • Reduction of the critical current density ($J_c$) for STT magnetization switching is most important issue of magnetic tunnel junctions (MTJs) based MRAM. This report describes how to decrease the Jc and will introduce the recent research progresses of STT-MRAM devices with material engineering and structural improvement, respectively.

  • https://doi.org/10.4283/JKMS.2009.19.1.022 인용 PDF KSCI

Magnetic Tunnel Junctions with Magnesium Oxide Barriers

  • Nagahama Taro;Moodera Jagadeesh S.
    • Journal of Magnetics
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    • v.11 no.4
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    • pp.170-181
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    • 2006

  • Spin dependent tunneling has enormously activated the field of magnetism in general, and in particular spin transport studies, in the past ten years. Thousands of articles related to the subject have appeared with many fundamental results. Importantly, there is great interest in their potential for application. There was another surge of activity in this field since the past five years - created by the theoretical prediction of a large tunnel magnetoresistance that arises due to band symmetry matched coherent tunneling in epitaxial magnetic tunnel junctions with (001) MgO barrier and experimentally well demonstrated. This further development in the field has boosted the excitement in both fundamental science as well as the possibility of application in such as magnetic random access memory, ultra sensitive read heads, biosensors and spin torque diodes. This review is a brief coverage of the field highlighting the literature that deals with magnetic tunnel junctions having epitaxial MgO tunnel barriers.

  • https://doi.org/10.4283/JMAG.2006.11.4.170 인용 PDF KSCI