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http://dx.doi.org/10.5573/JSTS.2014.14.6.728

Macro-Model of Magnetic Tunnel Junction for STT-MRAM including Dynamic Behavior  

Kim, Kyungmin (Integrated Circuits Laboratory, Hanyang University)
Yoo, Changsik (Integrated Circuits Laboratory, Hanyang University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.14, no.6, 2014 , pp. 728-732 More about this Journal
Abstract
Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.
Keywords
Macro model; magnetic tunnel junction (MTJ); spin transfer torque magnetic random access memory (STT MTJ); verilog-A;
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1 Yue Zhang, et al, "Electrical Modeling of Stochastic Spin Transfer Torque Writing in Magnetic Tunnel Junctions for Memory and Logic Applications," Magnetics, IEEE Transaction on, Vol. 49, No. 7, Jul., 2013.
2 Noboru Sakimura, et al, "High-Speed Simulator including Accurate MTJ Models for Spintronics Integrated Circuit Design," Circuits and Systems, 2012 IEEE International Symposium on, 2012 ISCAS, pp.1971-1974, 2012.
3 Ki Chul Chun, et al, "A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory," Solid-State-Circuits, IEEE Journal of, Vol. 48, No. 2, pp.598-610, Feb, 2013.   DOI
4 J. C. Slonczewski, "Current-driven exitation of magnetic multilayers," Jounal of Magnetism and Magnetic Materials, Vol 159, pp. L1-L7, Jun, 1996.   DOI   ScienceOn
5 Z. Diao, et al, "Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory," Journal of Physics : Condens. Matter, Vol. 19, no. 16, 165209, Apr, 2007.   DOI
6 K. Ono, et al, "a disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM," IEEE International Electron Devices Meeting, pp. 219-222, Dec. 2009.
7 Y. Asao, et al, "A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory," IEEE International Symposium on Defect and fault Tolerance of VLSI Systems, pp 507-515, 2008.
8 M. Hosomi, et al, "A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching Spin-RAM," IEEE International Electron Devices Meeting, Technical Digest, pp 459-462, Dec. 2005.
9 R. H. Koch, et al, "Time-Resolved Reversal of Spin-Transfer Switching in a Nanomagnet," Physical review letters, Vol. 92, No. 8, Feb, 2004.
10 D. C. Worledge, et al, "Spin torque switching ofperpendicular $Ta\left|CoFeB\right|MgO$-based magnetictunnel junctions," Applied physics letters 98, 022501, 2011.   DOI   ScienceOn
11 J. Z. Sun, et al, "Spin angular monentum transfer in a current-perpendicular spin-valve nanomagnet," Proceedings of SPIE, Vol. 5359, 445, 2004.