• Journal of Magnetics
• /
• v.17 no.4
• /
• pp.265-270
• /
• 2012

We report improved low-field magnetoresistance (LFMR) effects of the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3-Mn_3O_4$ composite films with the nominal composition of $La_{0.7}Sr_{0.3}MnO_3$(LSMO)-50 mol% $Mn_3O_4$. The composite films were fabricated by ex-situ solid phase crystallization (SPC) of amorphous films at the annealing temperature region of $900-1100^{\circ}C$ for 2 h in a pure oxygen atmosphere. The amorphous films were deposited on polycrystalline $BaZrO_3$ (poly-BZO) substrates by dc-magnetron sputtering at room temperature. The Curie temperatures ($T_C$) of all composite films were insignificantly altered in the range of 368-372 K. The highest LFMR value of 1.29 % in 0.5 kOe with the maximum dMR/dH value of $37.4%kOe^{-1}$ at 300 K was obtained from 900 nm-thick composite film annealed at $1100^{\circ}C$. The improved LFMR properties of the composite films are attributed to effective spin-dependent scattering at the $La_{0.7}Sr_{0.3}Mn_{1+d}O_3$ grain boundaries sharpened by adjacent chemically compatible $Mn_3O_4$ grains.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.35 no.3
• /
• pp.221-228
• /
• 2011

The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.

• Current Photovoltaic Research
• /
• v.3 no.3
• /
• pp.80-84
• /
• 2015

We suggest new emitter formation method using solid-phase epitaxy (SPE); solid-phase epitaxy emitter (SEE). This method expect simplification and cost reduction of process compared with furnace process (POCl3 or BBr3). The solid-phase epitaxy emitter (SEE) deposited a-Si:H layer by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) on substrate (c-Si), then thin layer growth solid-phase epitaxy (SPE) using rapid thermal process (RTP). This is possible in various emitter profile formation through dopant gas ($PH_3$) control at deposited a-Si:H layer. We fabricated solar cell to apply solid-phase epitaxy emitter (SEE). Its performance have an effect on crystallinity of phase transition layer (a-Si to c-Si). We confirmed crystallinity of this with a-Si:H layer thickness and annealing temperature by using raman spectroscopy, spectroscopic ellipsometry and transmission electron microscope. The crystallinity is excellent as the thickness of a-Si layer is thin (~50 nm) and annealing temperature is high (<$900^{\circ}C$). We fabricated a 16.7% solid-phase epitaxy emitter (SEE) cell. We anticipate its performance improvement applying thin tunnel oxide (<2nm).

• Polymer(Korea)
• /
• v.27 no.6
• /
• pp.603-608
• /
• 2003

Syndiotactic polystyrene (s-PS) presents a very complex polymorphic behavior depending on the sample preparation history and exhibits a solid-solid phase transition. Each different polymorphic structures of the s-PS sample were prepared by annealing the samples from room temperature to 220 $^{\circ}C$. The structural changes induced by annealing were investigated using FTIR and FT-Raman spectroscopy. Although the crystallization kinetics of s-PS are difficult to investigate with DSC due to its fast crystallization rate, it was possible to determine crystallinity changes in the s-PS sample using infrared characteristic peaks with Beer-Lambert's law.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.129-134
• /
• 2004

The development of fabrication processes of polycrystalline-silicon-thin-film transistors (poly-Si TFTs) at low temperatures is reviewed. Rapid crystallization through laser-induced melt-regrowth has an advantage of formation of crystalline silicon films at a low thermal budget. Solid phase crystallization techniques have also been improved for low temperature processing. Passivation of $SiO_2$/Si interface and grain boundaries is important to achieve high carrier transport properties. Oxygen plasma and $H_2O$ vapor heat treatments are proposed for effective reduction of the density of defect states. TFTs with high performance is reported.

• Journal of the Korean Vacuum Society
• /
• v.12 no.3
• /
• pp.168-173
• /
• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Journal of the Mineralogical Society of Korea
• /
• v.25 no.4
• /
• pp.283-293
• /
• 2012

In order to have better insights into the chemical differentiation of Earth from its magma ocean phase to the current stratified structure, detailed information of crystallization kinetics of silicate melts consisting of the magma ocean is essential. The structural transitions in oxide glasses and melts upon crystallization provide improved prospects for a systematic and quantitative understanding of the crystallization processes. Here, we report the $^{27}Al$ 3QMAS NMR spectra for sol-gel synthesized $Al_2O_3$ glass with varying temperature and annealing time. The NMR spectra for the amorphous $Al_2O_3$ show well-resolved Al coordination environments, characterized with mostly $^{[4,5]}Al$ and a minor fraction of $^{[6]}Al$. The fraction of $^{[5]}Al$ in the alumina phase decreases with increasing annealing time at constant temperature. The NMR results of $Al_2O_3$ phases also imply that multiple processes (e.g., crystallization and/or changes in structural disorder within glasses) could involve upon its phase transition. The current results and method can be useful to understand crystallization kinetics of diverse natural and multi-component silicate glasses and melts. The potential result may yield atomic-level understanding of Earth's chemical evolution and differentiation from the magma ocean.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.02a
• /
• pp.133-133
• /
• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.1
• /
• pp.26-35
• /
• 2024

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

• Journal of Korea Foundry Society
• /
• v.28 no.6
• /
• pp.261-267
• /
• 2008

In-situ quasicrystalline icosahedral (I) phase reinforced Ti-based bulk metallic glass (BMG) matrix composites have been successfully fabricated by using two distinct thermal histories for BMG forming alloy. The BMG composite containing micron-scale Iphase has been introduced by controlling cooling rate during solidification, whereas nano-scale I-phase reinforced BMG composite has been produced by partial crystallization of BMG. For mechanical properties, micron-scale I-phase distributed BMG composite exhibited lower strength and plasticity compared to the monolithic BMG. On the other hand, nano-scale icosahedral phase embedded BMG composite showed enhanced strength and plasticity. These improved mechanical properties were attributed to the multiplication of shear bands and blocking of the shear band propagation in terms of isolation and homogeneous distribution of nanosize icosahdral phases in the glassy matrix, followed by stabilizing the mechanical and deformation instabilities.