1 |
Cagran, C., Wilthan, B. and Pottlacher, G., 2003, Symposium on Thermophysical Propoperties in Boulder, CO, USA.
|
2 |
The REMBAR Company. Inc, http://www.rembar.com/default.htm Dobbs Ferry.
|
3 |
Rizzoni, G., 2005, Principles and Applications of Electrical Engineering 5th, McGraw-Hill. Inc.
|
4 |
Samsung Corning Precision Glass Inc, www.samsungscp. co.kr.
|
5 |
Miyasaka, M. and Stoemenos, J., 1999, Excimer Laser Annealing of Amorphous and Solid-Phase- Crystallized Silicon Films, J. Appl. Phys., Vol. 86, No. 10, pp. 5556-5565.
DOI
|
6 |
Ishihara, R., Wilt, P. C., Dijk, B. D., Burtsev, A.,
Metselaar, J. W. and Beenkker, C.I.M., 2003, Advanced Excier-Laser Crystallization Process for Single Crystalline Thin Film Transistors, Thin Solid Films, Vol. 427, pp. 77-85.
DOI
ScienceOn
|
7 |
Kuo, C. C., Yeh, W. C., Lee, J. F. and Jeng, J. Y.,
2007, Effects of Si Film Thickness and Substrate Temperature on Melt Duration Observed in Laser-Induced Crystallization of Amorphous Si Thin Films Using In-Situ Transient Reflectivity Measurements, Thin Solid Films, Vol. 515, pp. 8094-8100.
DOI
ScienceOn
|
8 |
Bonse, J., Brzezinka, K. -W. and Meixner, A. J.,
2004, Modifying Single-Crystalline Silicon by Femtosecond Laser Pulses: an Analysis by Micro Raman Spectroscopy, Scanning Laser Microscopy and Atomic Force Microscopy, Appl. Surf. Sci., Vol. 221, No. 1-4, pp. 215-230.
DOI
ScienceOn
|
9 |
Yan, J., Asami, T. and Kuriyagawa, T., 2008,
Modifying Single-Crystalline Silicon by Femtosecond Laser Pulses: an Analysis by Micro Raman Spectroscopy, Scanning Laser Microscopy and Atomic Force Microscopy, App. Surf. Sci., Volume 32, Issue 3, pp. 186-195.
|
10 |
Im, J. S., Kim, H. J. and Thompson, M. O., 1993, Phase Transformation Mechanisms Involved in Excimer Laser Crystallization of Amorphous Silicon Films, Appl. Phys. Lett. Vol. 63, pp. 2969-2971.
|
11 |
Voutsas, A. T. and Hatalis, M. K., 1992, Structure of As-Deposited LPCVD Silicon Films at Low Deposition Temperature and Pressures, J. Electrochem. Soc. Vol. 139, No. 9, pp. 2659-2665.
DOI
|
12 |
Yoon, S. Y., Park, S. J., Kim, K. H. and Jang, J., 2001, Metal-Induced Crystallization of Amorphous Silicon, Thin Solid Films, Vol. 383, pp. 34-38.
DOI
ScienceOn
|
13 |
Lee, S. W. and Joo, S. K., 1996, Low Temperature Poly-Si Thin-Film Transistor Fabrication by Metal- Induced Lateral Crystallization, IEEE Electron Dev. Lett., Vol. 17, No. 4, pp. 160-162.
DOI
ScienceOn
|
14 |
Smith, M., McMahon, R., Voelskow, M., Panknin, D. and Skorupa, W., 2005, Modeling of Flash Lamp Induced Crystallization of Amorphous Silicon Thin Films on Glass, J. Crys. Growth. Vol. 285, pp. 249-260.
DOI
ScienceOn
|
15 |
Hong, W. E. and Ro, J. S., 2007, Millisecond Crystallization of Amorphous Silicon Films by Joule-Heating Induced Crystallization Using a Conductive Layer, Thin Solid Films, Vol. 515, pp. 5357-5361.
DOI
ScienceOn
|
16 |
Hong, W. E., Chung, J. K., Kim, D. H., Park, S. H. and Ro, J. S., 2010, Supergrains Produced by Lateral Growth Using Joule-Heating Induced Crystallization without Artificial Control, Appl. Phys. Lett, Vol. 96, 052105-052107.
DOI
ScienceOn
|
17 |
Spinella, C., Lombardo, S. and Priolo, F., 1998, Crystal Grain Nucleation in Amorphous Silicon, J. App. Phys., Vol. 84, No. 10, pp.5383-5414.
DOI
|
18 |
Hatano, M., Moon, S., Lee, M., Suzuki, K. and
Grigoropoulos, C. P., 2000, In Situ and ex Situ Diagnostics on Melting and Resolidification Dynamics of Amorphous and Polycrystalline Silicon Thin Films During Excimer Laser Annealing, J. Non-Crystalline Solids, Vol. 266-269, No. 1, pp. 654-658.
DOI
ScienceOn
|
19 |
Peng, D. Z., Zan, H. W., Shin, P. S., Chang, T. C., Lin,
C. W. and Chang, C. Y., 2002, Comparison of Poly-Si Films Deposited By UHVCVD and LPCVD and Its Application for Thin Film Transistors, Vacuum, Vol. 67, pp. 641-645.
DOI
ScienceOn
|