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http://dx.doi.org/10.3795/KSME-B.2011.35.3.221

Thermal Investigation of Joule-Heating-Induced Crystallization of Amorphous Silicon Thin Film  

Kim, Dong-Hyun (Graduate Student, Dept. of Mechanical Engineering, Hongik Univ.)
Park, Seung-Ho (Dept. of Mechanical and System Design Engineering, Hongik Univ.)
Hong, Won-Eui (Dept. of Material Science and Engineering, Hongik Univ.)
Ro, Jae-Sang (Dept. of Material Science and Engineering, Hongik Univ.)
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.35, no.3, 2011 , pp. 221-228 More about this Journal
Abstract
The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.
Keywords
Crystallization; Poly-Silicon; Joule-Heating;
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