• The Journal of Sustainable Design and Educational Environment Research
• /
• v.16 no.2
• /
• pp.54-63
• /
• 2017

The various colors and transparency of DSC and operability unrelated with directions greatly expand the use of BIPV, as a multi-functional composite of module. Therefore the possibility of DSC BIPV is examined by the case study and the analysis and then its applicability is examined. Most of the DSC BIPVs, which are found through a total of six case studies and analyzes in Korea and abroad, are mainly implemented with window glass and shading devices. This is related to the DSC transparency property. Improvements are due to the irritation of the eye due to the color of the red module. Therefore, it is important to take into account the color of the BIPV window depending on the use of the building and the room. Meanwhile, some colors of application model may stimulate eyes and such colors should be considered by use of buildings and rooms in the application of BIPV window. DSC BIPV has prospective diffusibility with the development of flexible module for the application of building surface.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.396-396
• /
• 2012

$TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.493-496
• /
• 2004

Recently, organic thin films are widely used to the application of organic optoelectronic devices such as OLED, OTFT, organic solar cell, and organic laser, etc. The electrical transport of organic thin film is very important to determine the performance and thus should be analyzed for analysis of operation and design of devices. However, there have been rarely known about the electrical transport of organic thin films. As an example pentacene is known to be a good organic semiconductor to produce the best performance in OTFT at the present. But the performance is varied depending on the position of source/drain contacts and gate surface states and the thickness of thin film. Therefore, it is necessary to investigate the effects of the above-mentioned factors on the electrical properties of pentacene thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.7
• /
• pp.567-571
• /
• 2009

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.461-466
• /
• 2007

There has been a great interest in printing technology as a low cost and mass production method for the application of printed electronics such as printed TFT, solar cell, RFID Tag, printed battery, and so on. In this study, apparatuses of gravure-offset printing are developed for fine line-width/gap printing and examining pattern distortion occurred in gravure-offset printing process. The fine line-width/gap pattern shows that it is possible to make around 20 micro-meter line-width/gap printing patterns. Pattern distortion is modeled, and the amount and shape of the distortion are calculated by using commercial FEM code. The roll-to-roll printing system under development consists of unwinder/rewinder, two printing units, one coating unit, drying units, guiding unit, vision system, and other auxiliary devices. For multi-layer printing, the system is designed to be capable of printing two different materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.857-860
• /
• 2002

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.2
• /
• pp.1-9
• /
• 2013

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.322.1-322.1
• /
• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• Journal of Powder Materials
• /
• v.18 no.3
• /
• pp.256-261
• /
• 2011

In order to make a $Cu_2ZnSnSe_4$ (CZTSe) sputtering target sintered for solar cell application, synthesis of CZTSe compound by solid state reaction of Cu, Zn, Sn and Se mixed powders and effects of ball milling condition on sinterability such as ball size, combination of ball size, ball milling time and sintering temperature, was investigated. As a result of this research, sintering at $500^{\circ}C$ after ball milling using mixed balls of 1 mm and 3 mm for 72 hours was the optimum condition to synthesis near stoichiometric composition of $Cu_2ZnSnSe_4$ and to prepare sintered pellet with high density relatively.

• Journal of the Korean Society for Precision Engineering
• /
• v.29 no.6
• /
• pp.640-647
• /
• 2012

Current electronic products are dominated by the laser processing and the application will be extended this time. Especially, demands for high precision laser processing with a large area has been increasing for a number of applications such as in solar cell battery, display parts, electronic component and automobile industry. In this paper we designed an on-the-fly system for ultrafast/high precision/large area laser processing. In addition, we have developed the path algorithm for large area. Expansion of the area in which laser processing is an important factor to handle the ultrafast/wide area processing, it will require a processing path. Processing path is path of 2- axis stage and stage of change in velocity can be smooth as possible. We proposed a path of the user concept using NURBS(Non-Uniform Rational B-Spline)method. Through our experiment with the chopper, was to prove the continuity of edge parts. Through basic shape experiments, we proved that large area can be processed using laser. We developed a simulation tool using Visual C++.