• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.10
• /
• pp.838-843
• /
• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• Journal of the Korean Ceramic Society
• /
• v.34 no.4
• /
• pp.394-398
• /
• 1997

Mn-Zn ferrite powders were prepared by alcoholic dehydration, using coprecipitation method. Then the effects of organic dispersant and polymeric binder concentration on stability and casting of slurry were discussed. Citric acid, the organic dispersant and polyvinylacohol(PVA), the non-ionic binder, were selected as additives of slurry. With variation of concentration of water, citric acid and polyvinylalcohol(PVA), optimum forming conditions were determined from viscosity and density. To compare with dry process, density and microstructure of sintered body formed by uniaxial die pressing were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.185-188
• /
• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.5
• /
• pp.191-195
• /
• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• Resources Recycling
• /
• v.7 no.4
• /
• pp.35-42
• /
• 1998

Surface mount technology is the biggest theme in the area of deιIronic component. To miniatunze an electronic component, s such as ferrite chip inductor, the cer뼈lic wet process for green-sheet lamination and/or screen printing method through a s solvent medium system is widely used. The preparation and characterization of NiCuZn Ferrite (NCZF) shurry and the green s sheet using the water mixed binder system has been studied. The 21 vol% of NCZF slurry was prepared by a ball milling. The p polyacrylic vinyl copolymer (Mw; 60,000) was used as a binder. Th$\xi$ mixture of distilled water, isopropyl alcohol (IPA) and 2l butoxy ethanol was used as a dispersion medium. The water content of medium varied from about 40% to 80%. As the results. Thc disp$\xi$rston stability of the NCZF slurry was attributed to the free polymer rather than the electrostatic force of the particle. T The viscosity of the NCZF slurry was greatly depended on the ratio of water content in the medium.

• Journal of Powder Materials
• /
• v.26 no.1
• /
• pp.1-5
• /
• 2019

In this study, porous Mo-5 wt% Cu with unidirectionally aligned pores is prepared by freeze drying of camphene slurry with $MoO_3-CuO$ powders. Unidirectional freezing of camphene slurry with dispersion stability is conducted at $-25^{\circ}C$, and pores in the frozen specimens are generated by sublimation of the camphene crystals. The green bodies are hydrogen-reduced at $750^{\circ}C$ and sintered at $1000^{\circ}C$ for 1 h. X-ray diffraction analysis reveals that $MoO_3-CuO$ composite powders are completely converted to a Mo-and-Cu phase without any reaction phases by hydrogen reduction. The sintered bodies with the Mo-Cu phase show large and aligned parallel pores to the camphene growth direction as well as small pores in the internal walls of large pores. The pore size and porosity decrease with increasing composite powder content from 5 to 10 vol%. The change of pore characteristics is explained by the degree of powder rearrangement in slurry and the accumulation behavior of powders in the interdendritic spaces of solidified camphene.

• Korean Journal of Materials Research
• /
• v.34 no.1
• /
• pp.27-33
• /
• 2024

Al₂O₃ has excellent sintering properties and is important in semiconductor manufacturing processes that require high-temperature resistance and chemical inertness in a plasma environment. In this study, a comprehensive analysis of the chemical characteristics, physical properties, crystal structure, and dispersion stability of three commercially available Al₂O₃ powders was conducted. The aim was to provide a technological foundation for selecting and utilizing appropriate Al₂O₃ powders in practical applications. All powders exhibited α-Al₂O₃ as the main phase, with the presence of beta-phase Na₂O-11Al₂O₃ as the secondary phase. The highest Na⁺ ion leaching was observed in the aqueous slurry state due to the presence of the secondary phase. Although the average particle size difference among the three powders was not significant, distinct differences in particle size distribution were observed. ALG-1SH showed a broad particle size distribution, P162 exhibited a bimodal distribution, and AES-11 displayed a uniform unimodal distribution. High-concentration Al₂O₃ slurries showed differences in viscosity due to ion release when no dispersant was added, affecting the electrical double-layer thickness. Polycarboxylate was found to effectively enhance the dispersion stability of all three powders. In the dispersion stability analysis, ALG-1SH exhibited the slowest sedimentation tendency, as evidenced by the low TSI value, while P162 showed faster precipitation, influenced by the particle size distribution.

• Journal of the Korean Ceramic Society
• /
• v.37 no.7
• /
• pp.721-725
• /
• 2000

In this study, the dispersion stability of nano-sized CeO2 particles, synthesized by hydrothermal method in aqueous was evaluated from observing the surface potential behavior of CeO2 particle synthesized by solid state reaction. The isoelectric point(IEP) of nano-sized CeO2 synthesized by hydrothermal synthesis was found to be pH 9 contrary to the isoelectric point of micro-sized CeO2 synthesized by solid state reaction at pH 6.7. IEP was shifted to pH 2.0 as the addition of D-3019 from 0.1 to 1.0 wt%. The surface potential of CeO2 particles synthesized by hydrothermal synthesis was reduced as the addition of B-1001 used as a binder without change of IEP because the absorption of B-1001 polymer on the CeO2 particles shifted the shear plane of CeO2 particles outward away from the surface. This surface potential behavior was well correlated with the dispersion stability of slurry.

• Journal of Korea Technical Association of The Pulp and Paper Industry
• /
• v.44 no.2
• /
• pp.67-73
• /
• 2012

Structural stability and shock absorption are important properties for corrugated board. In order to maintain structural stability, adhesive properties between top/bottom liners and corrugated medium are not only essential but also important for productivity and product quality. Borax has been an essential ingredient in corrugating adhesive solution. Borax increases viscosity, bonding between starchs and green adhesive bond. The objective of this research is to improving adhesive strength and viscosity stability by adding cross-linking agent instead of borax. Rheology and penetration of main starch gelatinization slurry were affected by borax addition level. Borax increased viscosity and decreased viscosity stability, while cross-linking additives increased viscosity stability and adhesive strength by anchoring effect.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.83.1-83
• /
• 2003