Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2001.11b
- /
- Pages.185-188
- /
- 2001
Effects of Consumable on STI-CMP Process
STI-CMP 공정에서 Consumable의 영향
- Kim, Sang-Yong ;
- Park, Sung-Woo ;
- Jeong, So-Young ;
- Lee, Woo-Sun ;
-
Kim, Chang-Il
;
-
Chang, Eui-Goo
;
- Seo, Yong-Jin
- 김상용 (아남반도체, Fab 사업부 MIT팀) ;
- 박성우 (대불대학교 전기공학과) ;
- 정소영 (대불대학교 전기공학과) ;
- 이우선 (조선대학교 전기공학과) ;
-
김창일
(중앙대학교 전자전기공학부) ;
-
장의구
(중앙대학교 전자전기공학부) ;
- 서용진 (대불대학교 전기공학과)
- Published : 2001.11.08
Abstract
Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified
Keywords
- CMP(Chemical mechanical polishing);
- HSB(high spray bar);
- $PN_2$(Purified $N_2)$;
- hot spot POU fillter;
- DIW(deionized water)