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Effects of Various Facility Factors on CMP Process Defects  

Park, Seong-U (대불대학교 전자공학과 석사)
Jeong, So-Yeong (대불대학교 전자공학과)
Park, Chang-Jun (대불대학교 전자공학과)
Lee, Gyeong-Jin (대불대학교 전자공학과)
Kim, Gi-Uk (대불대학교 전자공학과)
Seo, Yong-Jin (대불대 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.5, 2002 , pp. 191-195 More about this Journal
Abstract
Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.
Keywords
CMP(chemical mechanical polishing); IMD(inter-metal dielectric); HSB(high spray bar); P$N_2$(Purified $N_2$); hot spot; POU(point of use); DIW(deionized water);
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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