• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• 한국세라믹학회지
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• 제34권4호
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• pp.394-398
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• 1997

Mn-Zn ferrite powders were prepared by alcoholic dehydration, using coprecipitation method. Then the effects of organic dispersant and polymeric binder concentration on stability and casting of slurry were discussed. Citric acid, the organic dispersant and polyvinylacohol(PVA), the non-ionic binder, were selected as additives of slurry. With variation of concentration of water, citric acid and polyvinylalcohol(PVA), optimum forming conditions were determined from viscosity and density. To compare with dry process, density and microstructure of sintered body formed by uniaxial die pressing were observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2 \; (PN_2)$ gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and $PN_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.191-195
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• 2002

Chemical mechanical Polishing (CMP) process is widely used for the global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP process, deionized water (DIW) pressure, purified $N_2$ ($PN_2$) gas, point of use (POU) slurry filler and high spray bar (HSB) were installed. Our experimental results show that DW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 자원리싸이클링
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• 제7권4호
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• pp.35-42
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• 1998

오늘날 전자부품 산업에 실장기술은 크게 각광을 받고 있다. 페라이트 칩인덕터와 같이 전자부품의 소형화를 위해서는, 쉬트 적층법이나 스크린 인쇄법 등을 위하여 유기용매를 사용하는 세라믹 습식공정이 널리 사용되고 있다. 본연구에서는 물이 혼합된 용매계를 이용한 NiCuZn Ferrite(NCZF) 슬러리와 그린쉬트의 제조 및 평가에 관한 연구를 하였다. 볼밀링에 의하여 21 vol%의 NCZF 슬러리를 제조하였으며, polacrylic vinyl copolymer를 바인더로서 사용하였다. 용매로서는 isopropyl alcohol과 2-butoxy ethanol에 40∼80% 물을 혼합하여 사용하였다. 그 결과, NCZF 슬러리의 분산안정성은 입자의 정전기적 힘보다는 free polymer에 의해 나타났으며, 슬러리의 점성은 용매중의 물함량에 크게 의존하였다.

• 한국분말재료학회지
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• 제26권1호
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• pp.1-5
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• 2019

In this study, porous Mo-5 wt% Cu with unidirectionally aligned pores is prepared by freeze drying of camphene slurry with $MoO_3-CuO$ powders. Unidirectional freezing of camphene slurry with dispersion stability is conducted at $-25^{\circ}C$, and pores in the frozen specimens are generated by sublimation of the camphene crystals. The green bodies are hydrogen-reduced at $750^{\circ}C$ and sintered at $1000^{\circ}C$ for 1 h. X-ray diffraction analysis reveals that $MoO_3-CuO$ composite powders are completely converted to a Mo-and-Cu phase without any reaction phases by hydrogen reduction. The sintered bodies with the Mo-Cu phase show large and aligned parallel pores to the camphene growth direction as well as small pores in the internal walls of large pores. The pore size and porosity decrease with increasing composite powder content from 5 to 10 vol%. The change of pore characteristics is explained by the degree of powder rearrangement in slurry and the accumulation behavior of powders in the interdendritic spaces of solidified camphene.

• 한국재료학회지
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• 제34권1호
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• pp.27-33
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• 2024

Al₂O₃ has excellent sintering properties and is important in semiconductor manufacturing processes that require high-temperature resistance and chemical inertness in a plasma environment. In this study, a comprehensive analysis of the chemical characteristics, physical properties, crystal structure, and dispersion stability of three commercially available Al₂O₃ powders was conducted. The aim was to provide a technological foundation for selecting and utilizing appropriate Al₂O₃ powders in practical applications. All powders exhibited α-Al₂O₃ as the main phase, with the presence of beta-phase Na₂O-11Al₂O₃ as the secondary phase. The highest Na⁺ ion leaching was observed in the aqueous slurry state due to the presence of the secondary phase. Although the average particle size difference among the three powders was not significant, distinct differences in particle size distribution were observed. ALG-1SH showed a broad particle size distribution, P162 exhibited a bimodal distribution, and AES-11 displayed a uniform unimodal distribution. High-concentration Al₂O₃ slurries showed differences in viscosity due to ion release when no dispersant was added, affecting the electrical double-layer thickness. Polycarboxylate was found to effectively enhance the dispersion stability of all three powders. In the dispersion stability analysis, ALG-1SH exhibited the slowest sedimentation tendency, as evidenced by the low TSI value, while P162 showed faster precipitation, influenced by the particle size distribution.

• 한국세라믹학회지
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• 제37권7호
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• pp.721-725
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• 2000

In this study, the dispersion stability of nano-sized CeO2 particles, synthesized by hydrothermal method in aqueous was evaluated from observing the surface potential behavior of CeO2 particle synthesized by solid state reaction. The isoelectric point(IEP) of nano-sized CeO2 synthesized by hydrothermal synthesis was found to be pH 9 contrary to the isoelectric point of micro-sized CeO2 synthesized by solid state reaction at pH 6.7. IEP was shifted to pH 2.0 as the addition of D-3019 from 0.1 to 1.0 wt%. The surface potential of CeO2 particles synthesized by hydrothermal synthesis was reduced as the addition of B-1001 used as a binder without change of IEP because the absorption of B-1001 polymer on the CeO2 particles shifted the shear plane of CeO2 particles outward away from the surface. This surface potential behavior was well correlated with the dispersion stability of slurry.

• 펄프종이기술
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• 제44권2호
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• pp.67-73
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• 2012

Structural stability and shock absorption are important properties for corrugated board. In order to maintain structural stability, adhesive properties between top/bottom liners and corrugated medium are not only essential but also important for productivity and product quality. Borax has been an essential ingredient in corrugating adhesive solution. Borax increases viscosity, bonding between starchs and green adhesive bond. The objective of this research is to improving adhesive strength and viscosity stability by adding cross-linking agent instead of borax. Rheology and penetration of main starch gelatinization slurry were affected by borax addition level. Borax increased viscosity and decreased viscosity stability, while cross-linking additives increased viscosity stability and adhesive strength by anchoring effect.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.83.1-83
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• 2003