• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.727-730
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• 2003

Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

• Journal of Sensor Science and Technology
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• v.16 no.2
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• pp.126-131
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• 2007

In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.518-525
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• 1996

본 고에서는 유리 집적광센서의 제작에 적합한 유리재료들의 종류와 특성을 설명하였으며, 이들 유리의 종류에 맞도록 개발되어진 제작기술 중에서 이온교환(Ion exchange)방법과 silica-on-silicon(SOS)방법을 소개하였다. 그리고 이러한 공정기술을 이용하여 제작되어진 유리 집적광센서 중에서 물체의 거리를 측정하기 위한 마이클슨 간섭계(michelson interferometer)와 물질의 농도를 측정하기 위한 화학센서(chemical sensor)들을 소개하였다.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.32-37
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• 1999

A capacitance-type humidity sensor with mesa structure in which porous silicon layer is used as humidity-sensing material is developed and its humidity sensing properties are measured. This sensor has a structure where two electrodes are set on the up-side of the wafer against the past typical structure having these electrodes on the up and down-side of the wafer. Therefore, the sensor can be fabricated monolithically to be more compatible with the IC process technology, and is possible to detect more correct output capacitance by removing the effect of the parasitic capacitance from the bottom layer and other junctions. To do this, the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. From the completed samples, the dependence of capacitance on the relative humidity of 55 to 90% more was measured at room temperature. As the result, the measured capacitance increased monotonously higher at the low frequency of 120 Hz, where the capacitance was observed to increase over 300%.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.6 s.249
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• pp.531-537
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• 2006

A lever type $NO_2$ micro gas sensor was fabricated by MEMS technology. In order to heat up the gas sensing material to a target temperature, a micro heater was built on the gas sensor. The sensing material laid on the heater and electrodes and did not contact with the silicon base to minimize the heat loss to the silicon base. The electric power to heat up the gas sensor to a target temperature was measured. The temperature distribution of micro gas sensor was analyzed by a CFD program. The predicted electric power of micro heater to heat up the sensing material to the target temperature showed a good agreement with the measured data. The design of micro gas sensor could be modified to show more uniform temperature distribution and to consume less electric power by optimizing the layout of micro heater and electrodes.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.5
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• pp.278-285
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• 2006

A micro hotplate for micro gas sensor was fabricated by MEMS technology. In order to heat up the gas sensing material to a target temperature, a micro hotplate was built on the gas sensor. The sensing material was deposited on the heater and electrodes, and did not contact with the silicon base to minimize the heat loss to the silicon base. The electric power to heat up the gas sensor was measured. The temperature distribution of micro gas sensor was analyzed by a CFD program. The predicted electric power to heat up th sensing material showed a good agreement with the measured data. The design of micro gas sensor could be modified to increase the temperature uniformity and to decrease the electric power consumption by optimizing the layout of micro hotplate and electrodes.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.74-80
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• 1994

Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1085-1088
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• 2003

In this work, we fabricated a gas-sensing device based on porous silicon(PS), and its I-V and C-V properties were investigated for sensing alcohol vapor. The structure of the sensor consists of thin Au/Oxidized porous silicon/porous silicon/Silicon/Al, where the silicon substrate is etched anisotropically to be prepared into a membrane shape. As the result, I-V curves showed typical tunneling property, and C-V curves were shaped like those of a MIS (metal-insulator- semiconductor) capacitor, where the capacitance in accumulation was increased with alcohol vapor concentration.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.8
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• pp.683-688
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• 2014

This paper presents a high-performance flexible tactile sensor based on inorganic silicon flexible electronics. We created 100 nm-thick semiconducting silicon ribbons equally distributed with 1 mm spacing and $8{\times}8$ arrays to sense the pressure distribution with high-sensitivity and repeatability. The organic silicon rubber substrate was used as a spring material to achieve both of mechanical flexibility and robustness. A thin copper layer was deposited and patterned on top of the pressure sensing layer to create a flexible temperature sensing layer. The fabricated tactile sensor was tested through a series of experiments. The results showed that the tactile sensor is capable of measuring pressure and temperature simultaneously and independently with high precision.