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http://dx.doi.org/10.5369/JSST.2007.16.2.126

Fabrication of a silicon pressure sensor for measuring low pressure using ICP-RIE  

Lee, Young-Tae (Andong National University)
Takao, Hidekuni (Toyohashi University of Technology)
Ishida, Makoto (Toyohashi University of Technology)
Publication Information
Journal of Sensor Science and Technology / v.16, no.2, 2007 , pp. 126-131 More about this Journal
Abstract
In this paper, we fabricated piezoresistive pressure sensor with dry etching technology which used ICP-RIE (inductively coupled plasma reactive ion etching) and etching delay technology which used SOI (silicon-on-insulator). Structure of the fabricated pressure sensor shows a square diaphragm connected to a frame which was vertically fabricated by dry etching process and a single-element four-terminal gauge arranged at diaphragm edge. Sensitivity of the fabricated sensor was about 3.5 mV/V kPa at 1 kPa full-scale. Measurable resolution of the sensor was not exceeding 20 Pa. The nonlinearity of the fabricated pressure sensor was less than 0.5 %F.S.O. at 1 kPa full-scale.
Keywords
pressure sensor; ICP-RIE; dry etching delay technology; SOI;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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