• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.29-33
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• 2000

MEMS, Micro Electro-Mechanical Systems, present one of the greatest advanced packaging challenges of the next decade. Historically hybrid technology, generally thick film, provided sensors and actuators while integrated circuit technologies provided the microelectronics for interpretation and control of the sensor input and actuator output. Brought together in MEMS these technical fields create new opportunities for miniaturization and performance. Integrated circuit processing technologies combined with hybrid design systems yield innovative sensors and actuators for a variety of applications from single crystal silicon wafers. MEMS packages, far more simple in principle than today's electronic packages, provide only physical protection to the devices they house. However, they cannot interfere with the function of the devices and often must actually facilitate the performance of the device. For example, a pressure transducer may need to be open to atmospheric pressure on one side of the detector yet protected from contamination and blockage. Similarly, an optical device requires protection from contamination without optical attenuation or distortion being introduced. Despite impediments such as package standardization and complexity, MEMS markets expect to double by 2003 to more than ＄9 billion, largely driven by micro-fluidic applications in the medical arena. Like the semiconductor industry before it. MEMS present many diverse demands on the advanced packaging engineering community. With focused effort, particularly on standards and packaging process efficiency. MEMS may offer the greatest opportunity for technical advancement as well as profitability in advanced packaging in the first decade of the 21st century! This paper explores MEMS packaging opportunities and reviews specific technical challenges to be met.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.38-42
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• 1999

Using the LOCOS process, we have fabricated the lateral type polysilicon field emission triodes with poly-Si/oxide/Si structure and investigated their current-voltage characteristics for three biasing modes of operation. The fabricated devices exhibit excellent electrical performances such as a relatively low turn-on anode voltage of 14 V at VGC = 0V, a stable and high emission current of 92${\mu}$A/triode over 90 hours, a small gate leakage current of 0.23 ${\mu}$A/triode and an outstanding transconductance of 57${\mu}$S/5triodes at VGC = 5V and VAC = 26V. these superior electrical operation is believed to be due to a large field enhancement effect, which is related to the sharp cathode tips produced by the LOCOS process as well as the high aspect ratio (height /radius ) of the cathode tip end.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.462-466
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• 2007

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.1-9
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• 2016

The warpage on mobile phone camera packages occurs due to the CTE(Coefficient of Thermal Expansion) mismatch between a thin silicon die and a substrate. The warpage in the optical instruments such as camera module has an effect on the field curvature, which is one of the factors degrading the optical performance and the product yield. In this paper, we studied the effect of die bonding epoxy on the package and optical performance of mobile phone camera packages. We calculated the warpages of camera module packages by using a finite element analysis, and their shapes were in good agreement showing parabolic curvature. We also measured the warpages and through-focus MTF of camera module specimens with experiments. The warpage was improved on an epoxy with low elastic modulus at both finite element analysis and experiment results, and the MTF performance increased accordingly. The results show that die bonding epoxy affects the warpage generated on the image sensor during the packaging process, and this warpage eventually affects the optical performance associated with the field curvature.

• Journal of Powder Materials
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• v.9 no.4
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• pp.267-272
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• 2002

The production of micro components is one of the leading technologies in the fields of information and communiation, medical and biotechnology, and micro sensor and micro actuator system. Microfabrication (micromachining) techniques such as X-ray lithography, electroforming, micromolding and excimer laser ablation are used for the production of micro components out of silicon, polymer and a limited number of pure metals or binary alloys. However, since the first development of microfabrication technologies there have been demands for the cost-effective replication in large scale series as well as the extended range of available material. One such promising process is micro powder injection molding (PIM), which inherits the advantages of the conventional PIM technology, such as low production cost, shape complexity, applicability to many materials, applicability to many materials, and good tolerance. This paper reports on a fundamental investigation of the application of W-Cu powder to micro metal injection molding (MIM), especially in view of achieving a good filling and a safe removal of a micro mold conducted in the experiment. It is absolutely legitimate and meaningful, at the present state of the technique, to continue developing the micro MIM towards production processes for micro components.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.733-740
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• 2014

A resistive micro Pirani gauge using amorphous silicon (a-Si) thin membrane is proposed. The proposed Pirani gauge can be easily integrated with the other process-compatible membrane-type sensors, and can be applicable for in-situ vacuum monitoring inside the vacuum package without an additional process. The vacuum level is measured by the resistance changes of the membrane using the low noise correlated double sampling (CDS) capacitive trans-impedance amplifier (CTIA). The measured vacuum range of the Pirani gauge is 0.1 to 10 Torr. The sensitivity and non-linearity are measured to be 78 mV / Torr and 0.5% in the pressure range of 0.1 to 10 Torr. The output noise level is measured to be $268{\mu}V_{rms}$ in 0.5 Hz to 50 Hz, which is 41.2% smaller than conventional CTIA.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.2
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• pp.1-6
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• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

• Journal of Sensor Science and Technology
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• v.17 no.6
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• pp.447-453
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• 2008

Respiration rate is one of the important vital signs. Photo-plethysmography (PPG) measurement especially on a finger has been widely used in pulse oximetry and also used in estimating respiration rate. It is well known that PPG contains respiration-induced intensity variation (RIIV) signal. However, the accuracy of finger PPG method has been controversial. We introduced a new technique of enhancing motion artifact by respiration. This was achieved simply by measuring PPG on the thorax. We examined the accuracy of these two PPG methods by comparing with two existing methods based on thoracic volume and nostril temperature changes. PPG sensing on finger tip, which is the most common site of measurement, produced 6.1 % error. On the other hand, our method of PPG sensing on the thorax achieved 0.4 % error which was a significant improvement. Finger PPG is sensitive to motion artifact and it is difficult to recover fully small respiratory signal buried in waveform dominated by absorption due to blood volume changes. Thorax PPG is poor to represent blood volumes changes since it contains substantial motion artifact due to respiration. Ironically, this inferior quality ensures higher accuracy in terms of respiration measurement. Extreme low-cost and small-sized LED/silicon detector and non-constrained reflection measurement provide a great candidate for respiration estimation in ubiquitous or personal health monitoring.

• Journal of Sensor Science and Technology
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• v.13 no.1
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• pp.35-40
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• 2004

A thin-film multijunction thermal converter was fabricated through the process using 6 inch silicon wafer semiconductor process and bulk micromachining. Evanohm R alloy and chromel-constantan were used as a heater and thermocouple materials, respectively. The temperature coefficient of resistance of Evanohm R heater was about 75.12 ppm/$^{\circ}C$ and the voltage sensitivity of the thermal converter indicated about 5.75 mV/mW in air. The transfer differences, measured by FRDC-DC method in the frequency range from 20 Hz to 10 kHz, showed the value under about 1.36 ppm, 0.83 ppm for the film thickness of 500, 200 nm, respectively. And in case of a 200 nm-thick thermal converter, the AC-DC transfer differences seems to be stabilized below the value of 1 ppm in the frequency range from 1 kHz to 500 kHz.

• Journal of Sensor Science and Technology
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• v.21 no.2
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• pp.114-120
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• 2012

This paper describes the design, fabrication and testing of a micromachined resonant accelerometer consisting of a symmetrical pair of proof masses and double-ended tuning fork(DETF) oscillators. Under the external acceleration along the input axis, the proof mass applies forces to the oscillators, which causes a change in their resonant frequency. This frequency change is measured to indicate the applied acceleration. Pivot anchor and leverage mechanisms are adopted in the accelerometer to generate larger force from a proof mass under certain acceleration, which enables increasing its scale factor. Finite element method analyses have been conducted to design the accelerometer and a silicon on insulator(SOI) wafer with a substrate glass wafer was used for fabricating it. The fabricated accelerometer has a scale factor of 188 Hz/g, which is shown to be in agreement with analysis results.