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http://dx.doi.org/10.5369/JSST.2007.16.6.462

Characteristics of polycrystalline AlN thin films deposited on 3C-SiC buffer layers for M/NEMS applications  

Chung, Gwiy-Sang (School of Electrical Eng., University of Ulsan)
Lee, Tae-Won (School of Electrical Eng., University of Ulsan)
Publication Information
Journal of Sensor Science and Technology / v.16, no.6, 2007 , pp. 462-466 More about this Journal
Abstract
Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.
Keywords
AlN (aluminum nitride); SiC (Silicon carbide); piezoelectric properties;
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Times Cited By KSCI : 1  (Citation Analysis)
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