Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Characteristics of polycrystalline AlN thin films deposited on 3C-SiC buffer layers for M/NEMS applications

3C-SiC 버퍼층위에 증착된 M/NEMS용 다결정 AlN 박막의 특성

  • 정귀상 (울산대학교 전기전자정보시스템공학부) ;
  • 이태원 (울산대학교 전기전자정보시스템공학부)
  • Published : 2007.11.30
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Abstract

Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers, in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. The columnar structure of AlN thin films was observed by FE-SEM. X-ray diffraction pattern proved that the grown AlN film on 3C-SiC layers had highly (002) orientation with low value of FWHM (${\Theta}=1.3^{\circ}$) in the rocking curve around (002) reflections. These results were shown that almost free residual stress existed in the grown AlN film on 3C-SiC buffer layers from the infrared absorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

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References

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